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irsm808 - 105mh 1 www.irf.com ? 201 4 international rectifier submit datasheet feedback ma y 18 , 2014 10a, 500v description irsm808 - 105mh is a 10a, 500v half - bridge module designed for advanced appliance motor drive applications such as energy efficient fans and pumps. ir's technology offers an extremely compact, high performance half - bridge topology in an isolated package. thi s advanced ipm offers a combination of ir's low r ds(on) trench fredfet technology and the industry benchmark half - bridge high voltage, rugged driver in a small pqfn package. at only 8x9mm and featuring integrated bootstrap functionality, the compact footpr int of this surface - mount package makes it suitable for applications that are space - constrained. irsm808- 105mh functions without a heat sink. features ? integrated gate drivers and bootstrap functionality ? suitable for sinusoidal modulation applications ? low r ds(on) trench fredfet ? under - voltage lockout for both channels ? matched propagation delay for all channels ? optimized dv/dt for loss and emi trade offs ? 3.3v input logic compatible ? active high hin and active low lin ? motor power range 80 - 200w ? isolation 1500v rms min ? rohs compliant internal electrical schematic 600v half bridge driver with built in bootstrap v+ vs v- vb vcc com dt lin hin irsm808-105mh ordering information orderable part number package type form quantity irsm 808- 105mh pqfn 8 x 9 mm tray 1300 irsm 808 - 105mhtr pqfn 8x9m m tape and reel 2000 half - bridge ipm for small appliance motor drive applications irsm808 - 105mh
irsm808 - 105mh 2 www.irf.com ? 201 4 international rectifier submit datasheet feedback ma y 18 , 2014 absolute maximum ratings absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. these are not tested at manufacturing. all voltage parameters are absolute voltages referenced to v ss unless otherwise stated in the table. the thermal resistance rating is measured under board mounted and still air conditions. symbol description min max unit bv dss mosfet blocking voltage --- 500 v i o output dc current per mosfet @ t c =25c --- 10 a p d power dissipation per mosfet @ t c =100c --- 55 w t j (mosfet & ic) maximum operating junction temperature --- 150 c t l lead temperature (soldering 30 seconds) --- 260 c t s storage temperature range - 40 150 c v b high side floating supply voltage - 0.3 vs + 20 v v s high side floating supply offset voltage vb - 20 vb +0.3 v v cc low side fixed supply voltage - 0.3 20 v v in logic input voltage lin, hin - 0.3 vcc+0.3 v v iso isolation voltage (1min) (note 2 ) --- 1500 v rms note1: calculated based on maximum junction temperature. bond wires current limit is 3.5a. note2: characterized, not tested at manufacturing recommended operating conditions symbol description min typ max units conditions v + positive dc bus input voltage --- --- 400 v v s1,2,3 high side floating supply offset voltage (note 3) --- 400 v v b1,2,3 high side floating supply voltage v s +12 --- v s +20 v v cc low side and logic supply voltage 13.5 --- 16.5 v v in logic input voltage com --- v cc v f p pwm carrier frequency --- --- 20 khz for proper operation the module should be used within the recommended conditions. all voltages are absolute referenced to com . the v s offset is tested with all supplies biased at 15v differential. note 3: logic operational for v s from com - 8v to com+500v. logic state held for v s from com - 8v to com - v bs .
irsm808 - 105mh 3 www.irf.com ? 201 4 international rectifier submit datasheet feedback ma y 18 , 2014 static electrical characteristics v bias (v cc , v bs )=15v, t j =25oc, unless otherwise specified. the v in , and i in parameters are referenced to com symbol description min typ max units conditions bv dss drain - to - source breakdown voltage 500 --- --- v t j =25c, i lk =3ma i lkh leakage current of high side fet?s in parallel --- 15 --- a t j =25c, v ds =500v i lkl leakage current of low side fet?s in parallel plus gate drive ic --- 20 --- a t j =25c, v ds =500v r ds(on) drain to source on resistance --- 0.58 0.8 t j =25c, v cc =10v, id = 6a --- 1.60 --- t j =150c, v cc =10v, id = 6a (note 4) v sd diode forward voltage --- 0.85 1.0 v t j =25c, v cc =10v, id = 6a v hin/lin logic ?1? input voltage for hin & ?0? for lin 2.2 --- --- v v hin/lin logic ?0? input voltage for hin & ?1? for lin --- --- 0.8 v v ccuv+, v bsuv+ v cc and v bs supply under - voltage, positive going threshold 8 8.9 9.8 v v ccuv -, v bsuv - v cc and v bs supply under - voltage, negative going threshold 7.4 8.2 9.0 v v ccuvh, v bsuvh v cc and v bs supply under - voltage lock - out hysteresis --- 0.7 --- v i qbs quiescent v bs supply current v in =0v --- 45 70 a i qcc quiescent v cc supply current v in =0v --- 1100 3000 a i hin+ input bias current v in =4v --- 5 20 a i lin - input bias current v in =0v --- 1 2 a r br internal bootstrap equivalent resistor value --- 200 --- t j =25c note 4: characterized, not tested at manufacturing mosfet avalanche characteristics symbol description min typ max units conditions eas single pulse avalanche energy --- 216 --- mj t j =25c, l=3mh, vdd=100v, ias=12a, to - 220 package. dynamic electrical characteristics v bias (v cc , v bs )=15v, tj=25oc, unless otherwise specified. driver only timing unless otherwise specified. symbol description min typ max units conditions t on input to output propagation turn - on delay time --- 0.8 1.3 s i d =1ma, v + =50v t off input to output propagation turn - off delay time --- 0.8 1.3 s gate driver; v lin =0 & v hin =5v with no external deadtime dt built - in deadtime 0. 9 1.3 --- s t fil,in input filter time (hin, lin) --- 300 --- ns
irsm808 - 105mh 4 www.irf.com ? 201 4 international rectifier submit datasheet feedback ma y 18 , 2014 thermal and mechanical characteristics symbol description min typ max units conditions r th(j - b) thermal resistance, junction to mounting pad, each mosfet --- 0.9 --- c/w standard reflow - solder process r th(j - a) thermal resistance, junction to ambient, each mosfet --- 40 --- c/w mounted on 13.2c m2 of two - layer fr4 with 36 vias input - output logic level table gate driver ic v+ u/v/w lo ho hin lin hin lin u,v,w hi hi v+ lo lo 0 hi lo ** lo hi * * v+ if motor current is flowing into vs, 0 if current is flowing out of vs into the motor winding ** anti shoot - through protection active (both ho and lo are off)
irsm808 - 105mh 5 www.irf.com ? 201 4 international rectifier submit datasheet feedback ma y 18 , 2014 figure 1 ? mos typical output characteristics at 25c figure 2 ? mos typical output characteristics at 25c
irsm808 - 105mh 6 www.irf.com ? 201 4 international rectifier submit datasheet feedback ma y 18 , 2014 figure 3 ? mos body diode typical characteristics at 25c and 150c figure 4 ? module top surface typical thermal impedance
irsm808 - 105mh 7 www.irf.com ? 201 4 international rectifier submit datasheet feedback ma y 18 , 2014 figure 5 ? typical switching losses at 390v figure 6 ? typical delta temperature between case (no heat - sink) and ambient with 1oz fr4 vs. power dissipation in the module
irsm808 - 105mh 8 www.irf.com ? 201 4 international rectifier submit datasheet feedback ma y 18 , 2014 figure 7 ? typical delta temperature between case (no heat - sink) and ambient wit h 2oz fr4 vs. power dissipation in the module figure 8 ? typical thermal resistance vs. power dissipation in the module (no heat sink) with 1oz fr4
irsm808 - 105mh 9 www.irf.com ? 201 4 international rectifier submit datasheet feedback ma y 18 , 2014 figure 9 ? typical thermal resistance vs. power dissipation in the module (no heat sink) with 2oz fr4 figure 10 ? typical thermal resistance vs. area per module (no heat sink) with two layers fr4
irsm808 - 105mh 10 www.irf.com ? 201 4 international rectifier submit datasheet feedback ma y 18 , 2014 qualification? qualification level industrial ?? (per jedec jesd 47) moisture sensitivity level msl3 ??? (per ipc/jedec j - std -020) esd human body model class 1c (per jedec standard ansi/esda/jedec js - 001 ) machine model class a (per eia/jedec standard jesd22 - a115 ) rohs compliant yes ? qualification standards can be found at international rectifier?s web site http://www.irf.com/ ?? higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information. ??? higher msl ratings may be available for the specific package types listed here. please contact your international rectifier sales representative for further information. module pin - out description pin name description 1, 4, 7, 32 com low side gate drive return 2 vcc 15v gate drive supply 3 hin logic input for high side (active high) 5 lin logic input for low side (active low) 6 dt dead time 8, 9, 10 v - low side source connection 11 ? 19 vs phase output 20 ? 28 v+ dc bus 29 ? 30 vs phase output ( - ve bootstrap cap connection) 31 vb high side floating supply (+ve bootstrap cap connection) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 exposed pad (pin 32) has to be connected to com for better electrical performance
irsm808 - 105mh 11 www.irf.com ? 201 4 international rectifier submit datasheet feedback ma y 18 , 2014 package outline irsm808 - 105mh (bottom view), 1 of 2 dimensions in mm
irsm808 - 105mh 12 www.irf.com ? 201 4 international rectifier submit datasheet feedback ma y 18 , 2014 package outline irsm808 - 105mh (bottom view), 2 of 2 dimensions in mm
irsm808 - 105mh 13 www.irf.com ? 201 4 international rectifier submit datasheet feedback ma y 18 , 2014 package outline irsm808 - 105mh (top & side view) dimensions in mm
irsm808 - 105mh 14 www.irf.com ? 201 4 international rectifier submit datasheet feedback ma y 18 , 2014 top marking irsm808 - 105mh
irsm808 - 105mh 15 www.irf.com ? 201 4 international rectifier submit datasheet feedback ma y 18 , 2014 t ypical application connection irs808 - 105mh irsm808-105mh . power supply vh ul uh wh wl gatekill ain1 cs_u+ cs_v+ vss vdd vddcap xtal0 xtal1 ain2 spd-ref vbus irmck171 vl u hvic hin lin vcc com vb ho vs lo v hvic hin lin vcc com vb ho vs lo w hvic hin lin vcc com vb ho vs lo vdd irsm808-105mh irsm808-105mh vl vh wh wl figure 1: typical application connection 1. bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and emi problems. additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. in order to provide a good decoupling between vcc - vss abd vb- vs terminals, the capaciotrs shown connected at these terminals should be located very close to the module pins. additional high frequency capacitors, typically 0.1uf, are recommended. 3. value of the boot - strap capacitors depends upon the switching frequency. their selection should be made based on ir design tip dt04 - 4 or application note an - 1044.
irsm808 - 105mh 16 www.irf.com ? 201 4 international rectifier submit datasheet feedback ma y 18 , 2014 figure 3a. input to output propagation turn - on delay time. figure 3b. input to output propagation turn - off delay time. figure 3 c . diode reverse recovery 50 % h in / l in v ds i d h in / l in t off t f 10 % i d 50 % v ce v ds i d h in / l in t on t r 50 % h in / l in 90 % i d 10 % i d 50 % v ds 90 % i d v ds i f h in / l in t rr i rr
irsm808 - 105mh 17 www.irf.com ? 201 4 international rectifier submit datasheet feedback ma y 18 , 2014 data and specifications are subject to change without notice ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252 - 7105 tac fax: (310) 252 - 7903 visit us at www.irf.com for sales contact information

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