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inchange semiconductor product specification silicon npn power transistors 2SD841 description ? with to-220 package ? low collector saturation voltage ? high speed switching ? high voltage:v cbo =800v(min) applications ? high voltage switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 800 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 5 v i c collector current 3 a i b base current 1.5 a t c =25 ?? 40 p c collector power dissipation t a =25 ?? 2 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SD841 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma , i b =0 400 v v cesat collector-emitter saturation voltage i c =0.5a; i b =50ma 1.0 v v besat base-emitter saturation voltage i c =0.5a; i b =50ma 1.5 v i cbo collector cut-off current v cb =800v; i e =0 1 ma i ebo emitter cut-off current v eb =5v; i c =0 1 ma h fe-1 dc current gain i c =10ma ; v ce =5v 8 h fe-2 dc current gain i c =0.5a ; v ce =5v 10 f t transition frequency i e =-0.1a ; v ce =10v 4 mhz c ob output capacitance i e =0 ; v cb =10v;f=1mhz 75 pf t f fall time i c =0.5a; i b1 =-i b2 =50ma v cc =200v; r l =400 |? 1.0 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SD841 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm)

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