dmn3016lss new product advance information new product 30v n - channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = 25c 3 0v 12 m ? @ v ? @ v description this mosfet has been designed to minimize the on - state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? backlighting ? power management functions ? dc- dc converters features and benefits ? low on - resistance ? low input capacitance ? fa st switching speed ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. ?green? device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? case: so - 8 ? case material: molded plastic, "green" molding com pound ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections indicator: see diagram ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil - std - 202, method 208 ? ordering information (note 4 ) part number case packaging dm n3016 l ss - 13 so - 8 2500 /tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://w ww.diodes.com/quality/lead_free.html for more information about diodes incorporated?s definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http : //www.diodes.com/products/packages.html . marking information chengdu a/t site shanghai a/t site = manufacturer?s marking n3016ls = product type marking code yyww = date code marking yy or yy = year (ex: 14 = 2014) ww = week (01 - 53) y y = date code marking for sat (shanghai assembly/ test site) y y = date code marking for cat (chengdu assembly/ test site) 1 4 8 5 n 3016 ls ww yy 1 4 8 5 n 3016 ls ww yy so - 8 t op view d s g equivalent circuit pin1 d s s s g d d d t op view pin configuration e3 dm n3016 l ss document number: d s 36937 rev. 2 - 2 1 of 6 www.diodes.com july 2014 ? diodes incorporated
dmn3016lss new product advance information new product maximum ratings (@ t a = +25c, u nless otherwise specified.) characteristic symbol value units drain - source voltage v dss 30 v gate - source voltage v gss 20 v continuous drain current (note 6 ) v gs = 10v steady state t a = + 25 c t a = + 70 c i d 10.3 8.3 a t<10s t a = + 25 c t a = + 70 c i d 13.4 10.6 a continuous drain current (note 6 ) v gs = 4.5 v steady state t a = + 25 c t a = + 70 c i d 9.3 7.3 a t<10s t a = + 25 c t a = + 70 c i d 12.0 9.5 a maximum continuous body diode f orward current (note 6 ) i s 2. 5 a pulsed drain current ( 10 s pulse, duty cyc le = 1% ) i dm 8 0 a avalanche current (note 7) l = 0.1mh i a s 22 a avalanche energy (note 7) l = 0.1mh e a s 25 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5 ) p d 1.5 w thermal resistance, junction to ambient (note 5 ) s teady state r ja 8 2 c/w t< 10 s 48 c/w total power dissipation (note 6 ) p d 2.0 w thermal resistance, junction to ambient (note 6 ) s teady state r ja 6 0 c/w t<10 s 37 c/w thermal resistance, junction to case r electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 25 0a ? 1 ? 100 n a v gs = 20 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) 1. 3 ? 2. 5 v v ds = v gs , i d = 250 a 8 12 m v gs = 10 v, i d = 12 a ? 12 16 v gs = 4 .5v, i d = 10 a diode forward voltage v sd ? 0.7 1.0 v v gs = 0v, i s = 1a dynamic characteristics (note 9 ) input capacitance c iss ? 1415 ? pf v ds = 15 v, v gs = 0v , f = 1.0mhz output capacitance c oss ? 119 ? reverse transfer capacitance c rss ? 82 ? gate resistance r g ? 2.6 3.2 11.3 ? nc v ds = 1 5 v, i d = 12a total gate charge ( v gs = 10 v ) q g ? 25.1 ? gate - source charge q gs ? 3.5 ? gate - drain charge q gd ? 3.6 ? turn - on delay time t d(on) ? 4.8 ? ns v dd = 15 v, v gs = 10 v, r l = 1.25 , r g = 3 , turn - on rise time t r ? 16.5 ? turn - off delay time t d(off) ? 26.1 ? turn - off fall time t f ? 5.6 ? reverse recovery time t rr ? 8.5 ? ns i f = 12a, di/dt = 500a/ s reverse recovery charge q rr ? 7.0 ? n c notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout . 6 . device mounted on fr - 4 substrate pc board, 2o z copper, with 1inch square copper plate . 7. uis in production with l = 0.1 mh, starting t a = + 25c. 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing. dm n3016 l ss document number: d s 36937 rev. 2 - 2 2 of 6 www.diodes.com july 2014 ? diodes incorporated
dmn3016lss new product advance information new product v , drain-source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t (a) d 0 5 10 15 20 25 30 0 0.5 1 1.5 2 v = 2.2v gs v = 2.5v gs v = 3.0v gs v = 4.5v gs v = 10v gs v = 4.0v gs v = 3.5v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r en t (a ) d 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r ai n -so u r c e o n -r esi st an c e ( ) d s ( o n ) ? ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 v =v i = 10a gs d 10 v= v i = 5a gs d 4.5 t , junction temperature ( c) figure 6 on-resistance variation with temperature j r , d r a i n - s o u r c e o n -r e si st a n c e ( ) d s ( o n ) ? www.diodes.com july 2014 ? diodes incorporated
dmn3016lss new product advance information new product t , junction temperature ( c) figure 7 gate threshold variation vs. ambient temperature j v , g a t e t h r e sh o l d vo l t ag e (v) g s ( t h ) 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 i = 1ma d i = 250a d v , source-drain voltage (v) sd figure 8 diode forward voltage vs. current i , s o u r c e c u r r en t (a) s 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 1.2 t = 25c a v , drain-source voltage (v) ds figure 9 typical drain-source leakage current vs. voltage i , d r a i n l ea kag e c u r r en t ( a) d s s 0.1 1 10 100 1000 10000 0 10 20 30 t = 25c a t = 85c a t = 125c a t = 150c a v , drain-source voltage (v) ds figure 10 typical junction capacitance c , j u n c t i o n c ap ac i t a n c e (p f ) t 10 100 1000 10000 0 2 4 6 8 10 12 14 16 18 20 f = 1mhz c iss c oss c rss q (nc) g , total gate charge figure 11 gate charge v g a t e t h r e s h o l d v o l t ag e (v ) g s 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 v = 15v i= a ds d 12 v , drain-source voltage (v) figure 12 soa, safe operation area ds i , d r a i n c u r r en t (a) d r limited ds(on) t = 150c t = 25c v = 10v single pulse j(max) a gs dut on 1 * mrp board 0.01 0.1 1 10 100 0.1 1 10 100 dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w dm n3016 l ss document number: d s 36937 rev. 2 - 2 4 of 6 www.diodes.com july 2014 ? diodes incorporated
dmn3016lss new product advance information new product t1, pulse duration time (sec) figure 13 transient thermal resistance r ( t ) , t r a n s i e n t t h er m al r e si st a n c e r (t) = r(t) * r r = 82c/w duty cycle, d = t1/ t2 ? ja ja ja d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 package outline dimensions please see ap02002 at http://w ww.diodes.com/datasheets/ap02002 .pdf for the latest version. suggested pad layout please see ap0200 1 at http://w ww.diodes.com/datasheets/ap0200 1 .pdf for the latest version. so - 8 dim min max a - 1.75 a1 0.10 0.20 a2 1.30 1.50 a3 0.15 0.25 b 0.3 0.5 d 4.85 4.95 e 5.90 6.10 e1 3.85 3. 95 e 1.27 typ h - 0.35 l 0.62 0.82 dimensions value (in mm) x 0.60 y 1.55 c1 5.4 c2 1.27 gauge plane seating plane detail ?a? detail ?a? e e1 h l d e b a2 a1 a 45 7 ~ 9 a3 0 . 2 5 4 x c1 c2 y dm n3016 l ss document number: d s 36937 rev. 2 - 2 5 of 6 www.diodes.com july 2014 ? diodes incorporated
dmn3016lss new product advance information new product important notice diodes i ncorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdi ction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not ass ume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this docu ment or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diode s incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, custom ers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unau thorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trad emarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support de vices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonabl y expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulato ry and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided b y diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 20 14, diodes incorporated www.diodes.com dm n3016 l ss document number: d s 36937 rev. 2 - 2 6 of 6 www.diodes.com july 2014 ? diodes incorporated
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