page . 1 st ad-nov .24.2009 pjp1n80 / PJU1N80 fea tures ? 1a, 800v, r ds(on) =16 @v gs =10v, i d =0.5a ? low on resistance ? fa st switching ? low gate charge ? fully chara cterized a vala nche v oltage a nd current ? spe ci ally de sigened f or ac ada pter , battery charge a nd smps ? in compli a nce with eu rohs 2002/95/ec dire ctives mechanical da t a ? ca se: t o-220ab / t o-251 molded pla stic ? t ermin als : soldera ble per mil-st d-750,method 2026 or dering informa tion 800v n-channel enhancement mode mosfet m axi mum ra tings a nd thermal chara cteristics (t a =25 o c unle ss otherwise noted ) note: 1. m axi mum dc current li mited by the pa ck age p an jit reser ves the right t o improve product design,functions and reliability without notice gate drain source to-220ab/to-251 to-220ab internal schematic diagram to -251 2 3 3 2 1 1 2 3 g d s 1 2 3 g d s type marking package packing pjp1n80 p1n80 to-220ab 50pcs/tube p ju1n80 u1n80 to-251 80pcs/tube pa ra m e te r s ym b o l p j p 1 n8 0 p j u1 n8 0 uni ts d r a i n- s o ur c e vo lta g e v d s 8 0 0 v ga te - s o ur c e vo lta g e v gs + 3 0 v c o nti nuo us d ra i n c ur re nt i d 1 1 a p uls e d d r a i n c urr e nt 1 ) i d m 4 4 a m a xi m um p o we r d i s s i p a ti o n d e ra ti ng fa c to r t a =2 5 o c p d 4 5 0 .3 6 3 1 0 .2 5 w op e ra ti ng j unc t i o n a nd s to ra g e te m p e r a ture ra ng e t j ,t s tg -5 5 to +1 5 0 o c avalanche energy with single pulse i as =1.4a, vdd=50v, l=10mh e a s 9 .8 m j junction-to-case thermal resistance r j c 2 .7 8 4 o c /w junction-to ambient thermal resistance r j a 6 2 .5 1 0 0 o c /w
page . 2 st ad-nov .24.2009 pjp1n80 / PJU1N80 electrical characteristics ( t a =25 o c unless otherwise noted ) note : plus t e st: pluse w idth < 300us, duty cycle < 2%. p a r a m e te r s ymb o l te s t c o nd i ti o n m i n. typ . ma x. uni ts s ta ti c d r a i n- s o urc e b re a k d o wn vo lta g e b v d s s v gs =0 v, i d =2 5 0 ua 8 0 0 - - v ga te thre s ho ld vo lta g e v gs (th) v d s =v gs , i d =2 5 0 ua 3 .1 - 4 .4 v d r a i n- s o ur c e on- s ta t e re s i s ta nc e r d s ( o n) v gs = 10v, i d = 0.5a - 13.5 16 ze r o ga te vo lta g e d r a i n c ur r e nt i d s s v ds = 8 00v, v gs =0v - - 10 ua gate body leakage i gs s v gs = + 3 0 v, v d s =0 v - - + 1 0 0 n dynamic to ta l ga te c ha r g e q g v d s = 6 4 0 v, i d = 0 .8 a v gs =1 0 v - 6 .8 - nc ga te - s o ur c e c ha rg e q g s - 1 .3 - ga te - d r a i n c ha r g e q g d - 3.1 - tur n- on d e la y ti me t d (o n) v dd = 4 00v, i d = 0.8 a v gs =10v , r g = 25 - 11.4 - ns tur n- on ri s e ti m e t r - 14.3 - tur n- off d e la y ti me t d (o ff) - 3 6 .7 - tur n- off f a ll ti m e t f - 1 5 .7 - inp ut c a p a c i ta nc e c i s s v d s =2 5 v, v gs =0 v f=1 .0 mh z - 1 6 0 2 0 0 p f outp ut c a p a c i t a nc e c o s s - 15 19 re ve r s e tra ns f e r c a p a c i ta nc e c rs s - 1.35 1.75 s o urc e - d ra i n d i o d e ma x. d i o d e f o rwa rd c urr e nt i s - - - 1 .0 a ma x.p uls e d s o ur c e c urr e nt i s m - - - 4 .0 a d i o d e f o r wa r d vo lta g e v s d i s =1 a , v gs =0 v - - 1 .5 v re ve r s e re c o ve r y ti m e t r r v gs =0 v, i f = 1 a d i /d t=1 0 0 a /us - 1 6 0 - ns re ve r s e re c o ve r y c ha r g e q rr - 0 .3 - uc
pjp1n80 / PJU1N80 typical characteristics curves ( ta=25 , unless otherwise noted) fig.1 output characteristric fig.2 transfer characteristric 0 0 .2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 15 20 25 30 i d - drain-to-source current (a) v ds - drain-to-source voltage (v) v g s = 20.0v ~ 7.0v 5.0v 6.0v 0.01 0 .1 1 2 3 4 5 6 7 8 i d - drain source current (a) v gs - gate-to-source voltage (v) v d s =40v t j = 125 o c 25 o c - 55 o c 12 1 4 16 18 20 22 24 0 5 10 15 20 25 30 r ds(on) - on-resistance ( ) v gs - gate-to-source voltage (v) i d = 1a t j = 25 o c 10 1 2 14 16 18 20 22 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 r ds(on) - on-resistance ( ) i d - drain current (a) v g s = 20v v gs =10v pjp1n80 / PJU1N80 typical characteristics curves ( ta=25 , unless otherwise noted) fig.3 on resistance vs drain current fig.4 on resistance vs gate to source voltage stad-nov.24.2009 fig.5 on resistance vs junction temperature fig.6 capacitance p age. 3 fig.1 output characteristric fig.2 transfer characteristric 0 0 .2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 15 20 25 30 i d - drain-to-source current (a) v ds - drain-to-source voltage (v) v g s = 20.0v ~ 7.0v 5.0v 6.0v 0.01 0 .1 1 2 3 4 5 6 7 8 i d - drain source current (a) v gs - gate-to-source voltage (v) v d s =40v t j = 125 o c 25 o c - 55 o c 12 1 4 16 18 20 22 24 0 5 10 15 20 25 30 r ds(on) - on-resistance ( ) v gs - gate-to-source voltage (v) i d = 1a t j = 25 o c 0.4 0 .6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 r ds(on) - on-resistance(normalized) t j - junction temperature ( o c) v g s =10 v i d =0.5a 0 5 0 100 150 200 250 300 0 5 10 15 20 25 30 c - capacitance (pf) v ds - drain-to-source voltage (v) ciss coss crss f = 1mhz v g s = 0v 10 1 2 14 16 18 20 22 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 r ds(on) - on-resistance ( ) i d - drain current (a) v g s = 20v v gs =10v
fig. 7 gate charge waveform pjp1n80 / PJU1N80 typical characteristics curves ( ta=25 , unless otherwise noted) fig.8 source-drain diode forward voltage 0 2 4 6 8 1 0 12 0 1 2 3 4 5 6 7 v gs - gate-to-source voltage (v) q g - gate charge (nc) i d = 0.8a v d s =640v v d s =400v v d s =160v 0.8 0 .9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 bv dss - breakdown voltage(normalized) tj - junction temperature (oc) i d = 250 a 0.01 0 .1 1 10 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source-to-drain voltage (v) t j = 125 o c 25 o c v g s = 0v -55 o c fig. 7 gate charge waveform pjp1n80 / PJU1N80 typical characteristics curves ( ta=25 , unless otherwise noted) fig.8 source-drain diode forward voltage stad-nov.24.2009 p age. 4 fig.9 breakdown voltage vs junction temperature 0 2 4 6 8 1 0 12 0 1 2 3 4 5 6 7 v gs - gate-to-source voltage (v) q g - gate charge (nc) i d = 0.8a v d s =640v v d s =400v v d s =160v 0.8 0 .9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 bv dss - breakdown voltage(normalized) tj - junction temperature (oc) i d = 250 a 0.01 0 .1 1 10 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source-to-drain voltage (v) t j = 125 o c 25 o c v g s = 0v -55 o c
page . 5 st ad-nov .24.2009 pjp1n80 / PJU1N80 copyright panjit international, inc 2010 the inf ormation pre sented in this document is believed to be a ccurate a nd reli a ble. the spe cif ication s a nd inf ormation here in are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others. legal st a tement
halogen free product declaration (use green molding compound :eler-8 ) 1. pan jit can produce halogen free product use molding compound for packing from mar.2008 that contain br<700 ppm,cl<700ppm, br+cl<1000ppm,sb2o3<100ppm. 2. if your company need halogen free product shall be note requirement green compound material on order for the halogen free product request.
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