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| hexfet ? power mosfet d s g benefits ? ? improved gate, avalanche and dynamic dv/dt ruggedness ? ? fully characterized capacitance and avalanche soa ? ? enhanced body diode dv/dt and di/dt capability ? ? lead-free, rohs compliant, halogen-free v dss 100v r ds(on) typ. 3.5m ?? max 4.2m ?? i d (silicon limited) 192a ? to-220ab IRF100B201 s d g g d s gate drain source base part number package type standard pack form quantity IRF100B201 to-220 tube 50 IRF100B201 orderable part number irf100s201 d 2 -pak tape and reel 800 irf100s201 strong ir fet? IRF100B201 irf100s201 application ? ? brushed motor drive applications ? ? bldc motor drive applications ? ? battery powered circuits ? ? half-bridge and full-bridge topologies ? ? synchronous rectifier applications ? ? resonant mode power supplies ? ? or-ing and redundant power switches ? ? dc/dc and ac/dc converters ? ? dc/ac inverters fig 2. maximum drain current vs. case temperature fig 1. typical on? resistance vs. gate voltage s d g d 2 -pak irf100s201 1 www.irf.com ? 2015 international rectifier submit datasheet feedback march 26, 2015 25 50 75 100 125 150 175 t c , case temperature (c) 0 40 80 120 160 200 i d , d r a i n c u r r e n t ( a ) 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 2 4 6 8 10 12 14 16 18 20 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 115a t j = 25c t j = 125c
? IRF100B201/irf100s201 2 www.irf.com ? 2015 international rectifier submit datasheet feedback march 26, 2015 static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.1 ??? v/c reference to 25c, i d = 5ma ? r ds(on) static drain-to-source on-resistance ??? 3.5 4.2 m ??? v gs = 10v, i d = 115a ? v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a i dss drain-to-source leakage current ??? ??? 20 a v ds =100 v, v gs = 0v ??? ??? 250 v ds = 80v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v r g gate resistance ??? 2.2 ??? ?? notes: ?? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 86h, r g = 50 ? , i as = 115a, v gs =10v. ?? i sd ? 115a, di/dt ? 1400a/s, v dd ? v (br)dss , t j ?? 175c. ?? pulse width ? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same c harging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. ? when mounted on 1 inch square pcb (fr-4). please refer to an-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf ? limited by t jmax , starting t j = 25c, l = 1.0mh, r g = 50 ? , i as = 45a, v gs =10v. ? this value determined from sample failure population, starting t j =25c, l= 86h, r g = 50 ? , i as =115a, v gs =10v. avalanche characteristics ? e as (thermally limited) single pulse avalanche energy ?? 567 e as (thermally limited) single pulse avalanche energy ?? 1005 i ar avalanche current ? see fig 15, 15, 23a, 23b ? a e ar repetitive avalanche energy ? mj mj e as (tested) single pulse avalanche energy tested value ?? 240 thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ?? ??? 0.34 r ? cs case-to-sink, flat greased surface 0.50 ??? r ? ja junction-to-ambient ? ??? 62 c/w ? r ? ja junction-to-ambient (pcb mount) ? ??? 40 absolute maximum rating symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 192 a ? i d @ t c = 100c continuous drain current, v gs @ 10v 136 i dm pulsed drain current ?? 690 p d @t c = 25c maximum power dissipation 441 w linear derating factor 2.9 w/c v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to + 175 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) ? ? IRF100B201/irf100s201 3 www.irf.com ? 2015 international rectifier submit datasheet feedback march 26, 2015 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 278 ??? ??? s v ds = 10v, i d = 115a q g total gate charge ??? 170 255 nc ? i d = 115a q gs gate-to-source charge ??? 46 ??? v ds = 50v q gd gate-to-drain charge ??? 45 ??? v gs = 10v q sync total gate charge sync. (qg? qgd) ??? 125 ??? t d(on) turn-on delay time ??? 17 ??? ns v dd = 65v t r rise time ??? 97 ??? i d = 115a t d(off) turn-off delay time ??? 110 ??? r g = 2.7 ?? t f fall time ??? 100 ??? v gs = 10v ? c iss input capacitance ??? 9500 ??? pf ? v gs = 0v c oss output capacitance ??? 660 ??? v ds = 50v c rss reverse transfer capacitance ??? 310 ??? ? = 1.0mhz, see fig.tbd c oss eff.(er) effective output capacitance (energy related) ??? 725 ??? v gs = 0v, vds = 0v to 80v ? c oss eff.(tr) output capacitance (time related) ??? 950 ??? v gs = 0v, vds = 0v to 80v ? diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 192 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 690 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c,i s = 115a,v gs = 0v ?? t rr reverse recovery time ??? 47 ??? ns t j = 25c v dd = 85v ??? 55 ??? t j = 125c i f = 115a, q rr reverse recovery charge ??? 90 ??? nc t j = 25c di/dt = 100a/s ??? ??? 123 ??? t j = 125c ? i rrm reverse recovery current ??? 3.5 ??? a t j = 25c ? dv/dt peak diode recovery dv/dt ?? ??? 18 ??? v/ns t j = 175c,i s =115a,v ds = 100v d s g ? IRF100B201/irf100s201 4 www.irf.com ? 2015 international rectifier submit datasheet feedback march 26, 2015 fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics fig 4. typical output characteristics fig 3. typical output characteristics fig 7. typical capacitance vs. drain-to-source voltage fig 8. typical gate charge vs.gate-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 7.0v 6.0v 5.5v 5.0v 4.5v bottom 4.0v ? 60s pulse width tj = 25c 4.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 7.0v 6.0v 5.5v 5.0v 4.5v bottom 4.0v ? 60s pulse width tj = 175c 4.0v 1 2 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 50v ? 60s pulse width -60 -20 20 60 100 140 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 115a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 40 80 120 160 200 240 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v vds= 20v i d = 115a ? IRF100B201/irf100s201 5 www.irf.com ? 2015 international rectifier submit datasheet feedback march 26, 2015 fig 10. maximum safe operating area fig 9. typical source-drain diode forward voltage fig 13. typical on? resistance vs. drain current fig 11. drain-to-source breakdown voltage fig 12. typical c oss stored energy 0.0 0.5 1.0 1.5 2.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 90 100 110 120 130 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 5.0ma -10 0 10 20 30 40 50 60 70 80 90 100 v ds, drain-to-source voltage (v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 e n e r g y ( j ) 0 40 80 120 160 200 i d , drain current (a) 2 4 6 8 10 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 5.0v vgs = 5.5v vgs = 6.0v vgs = 7.0v vgs = 8.0v vgs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by rds(on) 100sec dc ? IRF100B201/irf100s201 6 www.irf.com ? 2015 international rectifier submit datasheet feedback march 26, 2015 fig 14. maximum effective transient thermal impedance, junction-to-case notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 14) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? fig 16. maximum avalanche energy vs. temperature fig 15. avalanche current vs. pulse width 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) duty cycle = single pulse allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) 0.01 0.05 0.10 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 600 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 115a ? IRF100B201/irf100s201 7 www.irf.com ? 2015 international rectifier submit datasheet feedback march 26, 2015 fig 21. typical stored charge vs. dif/dt fig 20. typical stored charge vs. dif/dt fig 19. typical recovery current vs. dif/dt fig 17. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a id = 1.0ma i d = 10ma i d = 1.0a 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 5 10 15 20 25 30 35 i r r m ( a ) i f = 77a v r = 85v t j = 25c t j = 125c 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 5 10 15 20 25 30 35 i r r m ( a ) i f = 115a v r = 85v t j = 25c t j = 125c 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 200 400 600 800 1000 q r r ( n c ) i f = 77a v r = 85v t j = 25c t j = 125c fig 18. typical recovery current vs. dif/dt 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 200 400 600 800 1000 q r r ( n c ) i f = 115a v r = 85v t j = 25c t j = 125c ? IRF100B201/irf100s201 8 www.irf.com ? 2015 international rectifier submit datasheet feedback march 26, 2015 fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (br)dss i as fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 25b. gate charge waveform vdd ? ? IRF100B201/irf100s201 9 www.irf.com ? 2015 international rectifier submit datasheet feedback march 26, 2015 to-220ab package outline (dimensions are shown in millimeters (inches)) to-220ab part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ in t e r n a t io n a l part number r e c t if ie r lo t c o d e assem bly lo g o year 0 = 2000 date code w eek 19 lin e c lot code 1789 e x a m p l e : t h is is a n ir f 1 0 1 0 n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead - free" in th e assem bly lin e "c " assem bled o n w w 19, 2000 to-220ab packages are not recommended for surface mount application . ? IRF100B201/irf100s201 10 www.irf.com ? 2015 international rectifier submit datasheet feedback march 26, 2015 d 2 pak (to-263ab) package outline (dimensions are shown in millimeters (inches)) d 2 pak (to-263ab) part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ date code year 0 = 2000 week 02 a = assembly site code rectifier international part number p = designates lead - free product (optional) f530s in the assembly line "l" assembled on ww 02, 2000 this is an irf530s with lot code 8024 international logo rectifier lot code assembly year 0 = 2000 part number date code line l week 02 or f530s logo assembly lot code ? IRF100B201/irf100s201 11 www.irf.com ? 2015 international rectifier submit datasheet feedback march 26, 2015 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. d 2 pak (to-263ab) tape & reel information (dimensions are shown in millimeters (inches)) note: for the most current drawing please refer to ir website at http://www.irf.com/package/ ? IRF100B201/irf100s201 12 www.irf.com ? 2015 international rectifier submit datasheet feedback march 26, 2015 ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? to-220 n/a d 2 pak msl1 rohs compliant yes moisture sensitivity level ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ |
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