FDG6316P applications ? battery management ? load switch features ? ?0.7 a, ?12 v. r ds(on) = 270 m ? @ v gs = ?4.5 v r ds(on) = 360 m ? @ v gs = ?2.5 v r ds(on) = 650 m ? @ v gs = ?1.8 v ? low gate charge ? high performance trench technology for extremely low r ds(on) ? compact industry standard sc70-6 surface mount package s g d d g s pin 1 sc70-6 s g d d g s 6 or 3 5 or 2 4 or 1 1 or 4 2 or 5 3 or 6 the pinouts are symmetrical; pin 1 and pin 4 are interchangeable. absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage ?12 v v gss gate-source voltage 8 v i d drain current ? continuous (note 1) ?0.7 a ? pulsed ?1.8 p d power dissipation for single operation (note 1) 0.3 w t j , t stg operating and storage junction temperature range ?55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1) 415 c/w package marking and ordering information device marking device reel size tape width quantity .16 FDG6316P 7?? 8mm 3000 units 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com smd type smd type smd type product specification
electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = ?250 a ?12 v ? bv dss ? t j breakdown voltage temperature coefficient i d = ?250 a, referenced to 25 c ?3.7 mv/ c i dss zero gate voltage drain current v ds = ?10 v, v gs = 0 v ?1 a i gssf gate?body leakage, forward v gs = ?8 v, v ds = 0 v ?100 na i gssr gate?body leakage, reverse v gs = 8 v, v ds = 0 v 100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ?250 a ?0.4 ?0.6 ?1.5 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = ?250 a, referenced to 25 c 2 mv/ c r ds(on) static drain?source on?resistance v gs = ?4.5 v, i d = ?0.7 a v gs = ?2.5 v, i d = ?0.5 a v gs = ?1.8 v, i d = ?0.4 a v gs = ?4.5 v, i d = ?0.7 a, t j =125c 221 297 427 250 270 360 650 348 m ? i d(on) on?state drain current v gs = ?4.5 v, v ds = ?5 v ?1.8 a g fs forward transconductance v ds = ?5 v, i d = ?0.7 a 2.5 s dynamic characteristics c iss input capacitance 146 pf c oss output capacitance 60 pf c rss reverse transfer capacitance v ds = ?6 v, v gs = 0 v, f = 1.0 mhz 48 pf switching characteristics (note 2) t d(on) turn?on delay time 5 10 ns t r turn?on rise time 13 23 ns t d(off) turn?off delay time 8 16 ns t f turn?off fall time v dd = ?6 v, i d = 1 a, v gs = ?4.5 v, r gen = 6 ? 2 4 ns q g total gate charge 1.7 2.4 nc q gs gate?source charge 0.3 nc q gd gate?drain charge v ds = ?6 v, i d = ?0.7 a, v gs = ?4.5 v 0.4 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current ?0.25 a v sd drain?source diode forward voltage v gs = 0 v, i s = ?0.25 a (note 2) ?0.7 ?1.2 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ja is determined by the user's board design. r ja = 415c/w when mounted on a minimum pad of fr-4 pcb on still air environment 2. pulse test: pulse width < 300 s, duty cycle < 2.0% 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com FDG6316P smd type smd type smd type product specification
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