- patented trench schottky technology - excellent high temperature stability - low forward voltage - low power loss/ high efficiency - high forward surge capability molding compound meets ul 94 v-0 flammability rating packing code with suffix "g" menas green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test v rrm v dv/dt v/ s typ max typ max typ max typ max t j = 25c 0.69 0.78 0.75 0.88 0.81 0.90 0.84 0.92 t j = 125c 0.61 0.68 0.64 0.75 0.68 0.77 0.70 0.79 t j = 25c - 250 - 250 - 150 - 150 a t j = 125c 10 35 10 35 3 20 3 20 ma r jc c/w t j c t stg c document number: ds_d1411059 version: e14 note 1: pulse test with pulse width=300 s, 1% duty cycle instantaneous reverse current per diode at rated reverse voltage typical thermal resistance per diode instantaneous forward voltage per diode (note1) 2.2 operating junction temperature range storage temperature range per diode peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode i fsm 3 30 voltage rate of change (rated v r ) unit mounting torque: 0.56 nm max. weight: 1.88 g (approximately) maximum ratings and electrical characteristics (t a = 25c unless otherwise noted) tst30h 120cw maximum repetitive peak reverse voltage maximum average forward rectified current per device i f(av) taiwan semiconductor trench schottky rectifier features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec tst30h 150cw - halogen-free according to iec 61249-2-21 definition typical applications mechanical data case: to-220ab polarity: as marked a v i f = 15a parameter symbol tst30h 100cw 100 120 a tst30h 200cw 150 200 trench schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board dc/dc converters. to-220ab tst30h100cw thru tst30h200cw - 55 to +150 - 55 to +150 15 200 10000 v f i r
document number: ds_d1411059 version: e14 tst30h100cw thru tst30h200cw taiwan semiconductor ordering information part no. packing code suffix package packing code tst30hxxxcw (note 1) g note 1: " xxx" defi nes voltage from 100v (tst30h100cw) to 200v (tst30h200cw) to-220ab example preferred part no. part no. c0 packing code suffix packing code green compound ratings and characteristics curves (t a = 25c unless otherwise noted) description 50 / tube packing tst30h120cw c0g g c0 tst30h120cw 0 5 10 15 20 25 30 35 0 255075100125150 fig. 1 forward current derating curve with heatsink 3in x 5in x 0.25in al-plate case temperature ( o c) average forward current (a) tst30h100cw tst30h120cw TST30H150CW tst30h200cw 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 fig. 2 typical forward characteristics tst30h100cw instantaneous forward current (a) forward voltage (v) t j =150 o c t j =125 o c t j =25 o c t j =100 o c 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 fig. 4 typical forward characteristics TST30H150CW instantaneous forward current (a) forward voltage (v) t j =150 o c t j =125 o c t j =25 o c t j =100 o c 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 fig. 3 typical forward characteristics tst30h120cw instantaneous forward current (a) forward voltage (v) t j =150 o c t j =125 o c t j =25 o c t j =100 o c
document number: ds_d1411059 version: e14 tst30h100cw thru tst30h200cw taiwan semiconductor 0.00001 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 fig. 8 typical reverse characteristics TST30H150CW percent of rated peak reverse voltage (%) instantaneous reverse current (ma) t j =150 o c t j =125 o c t j =25 o c t j =100 o c 10 100 1000 10000 0.1 1 10 100 fig. 10 typical junction capactiance f=1.0mhz vsig=50mvp-p junction capacitance (pf) reverse voltage (v) tst30h200cw TST30H150CW tst30h100cw tst30h120cw 0.00001 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 fig. 9 typical reverse characteristics tst30h200cw percent of rated peak reverse voltage (%) instantaneous reverse current (ma) t j =150 o c t j =125 o c t j =25 o c t j =100 o c 0.00001 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 fig. 7 typical reverse characteristics instantaneous reverse current (ma) tst30h120cw percent of rated peak reverse voltage (%) t j =150 o c t j =125 o c t j =25 o c t j =100 o c instantaneous reverse current (ma) tst30h120cw percent of rated peak reverse voltage (%) t j =150 o c t j =125 o c t j =25 o c t j =100 o c 0.00001 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 fig. 6 typical reverse characteristics tst30h100cw percent of rated peak reverse voltage (%) instantaneous reverse current (ma) t j =150 o c t j =125 o c t j =25 o c t j =100 o c 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 fig. 5 typical forward characteristics tst30h200cw instantaneous forward current (a) forward voltage (v) t j =150 o c t j =125 o c t j =25 o c t j =100 o c
package outline dimensions min max min max a - 10.50 - 0.413 b 2.54 3.44 0.100 0.135 c 2.80 4.20 0.110 0.165 d 0.68 0.94 0.027 0.037 e 3.54 4.00 0.139 0.157 f 14.60 16.00 0.575 0.630 g 13.19 14.79 0.519 0.582 h 2.41 2.67 0.095 0.105 i 4.42 4.76 0.174 0.187 j 1.14 1.40 0.045 0.055 k 5.84 6.86 0.230 0.270 l 2.20 2.80 0.087 0.110 m 0.35 0.64 0.014 0.025 n 0.95 1.45 0.037 0.057 marking diagram p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1411059 version: e14 tst30h100cw thru tst30h200cw taiwan semiconductor dim. unit (mm) unit (inch) to-220ab
creat by art assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1411059 version: e14 tst30h100cw thru tst30h200cw taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
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