IRFL4105 mosfet s d g v dss = 55v r ds(on) = 0.045 w i d = 3.7a the sot-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. its unique package design allows for easy automatic pick- and-place as with other sot or soic packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. power dissipation of 1.0w is possible in a typical surface mount application. description l ultra low on-resistance l dynamic dv/dt rating l fast switching l fully avalanche rated sot-223 parameter typ. max. units r q ja junction-to-amb. (pcb mount, steady state)* 90 120 r q ja junction-to-amb. (pcb mount, steady state)** 50 60 thermal resistance c/w parameter max. units i d @ t a = 25c continuous drain current, v gs @ 10v** 5.2 i d @ t a = 25c continuous drain current, v gs @ 10v* 3.7 i d @ t a = 70c continuous drain current, v gs @ 10v* 3.0 i dm pulsed drain current ? 30 p d @t a = 25c power dissipation (pcb mount)** 2.1 w p d @t a = 25c power dissipation (pcb mount)* 1.0 w linear derating factor (pcb mount)* 8.3 mw/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 110 mj i ar avalanche current ? 3.7 a e ar repetitive avalanche energy ? 0.10 mj dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j, t stg junction and storage temperature range -55 to + 150 c absolute maximum ratings a 2014-8-9 1 www.kersemi.com
IRFL4105 parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.058 CCC v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC CCC 0.045 w v gs = 10v, i d = 3.7a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 3.8 CCC CCC s v ds = 25v, i d = 1.9a CCC CCC 25 a v ds = 55v, v gs = 0v CCC CCC 250 v ds = 44v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC 23 35 i d = 3.7a q gs gate-to-source charge CCC 3.4 5.1 nc v ds = 44v q gd gate-to-drain ("miller") charge CCC 9.8 15 v gs = 10v, see fig. 6 and 13 ? t d(on) turn-on delay time CCC 7.1 CCC v dd = 28v t r rise time CCC 12 CCC i d = 3.7a t d(off) turn-off delay time CCC 19 CCC r g = 6.0 w t f fall time CCC 12 CCC r d = 7.5 w, see fig. 10 ? c iss input capacitance CCC 660 CCC v gs = 0v c oss output capacitance CCC 230 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 99 CCC ? = 1.0mhz, see fig. 5 electrical characteristics @ t j = 25c (unless otherwise specified) i gss ns i dss drain-to-source leakage current parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 3.7a, v gs = 0v ? t rr reverse recovery time CCC 55 82 ns t j = 25c, i f = 3.7a q rr reverse recoverycharge CCC 120 170 nc di/dt = 100a/s ? source-drain ratings and characteristics CCC CCC CCC CCC 30 1.3 a 2014-8-9 2 www.kersemi.com
fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 1. typical output characteristics, t j = 25 o c 1 10 100 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source volta g e ( v ) ds vgs to p 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20 s pulse w idth t = 25c c a 4.5v 1 10 100 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source volta g e ( v ) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20 s pulse width t = 150c a 4.5v j fig 2. typical output characteristics, t j = 150 o c 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-s ource o n resistance ds(on) (n orm alized) v = 10v gs a i = 3.7 a d 1 10 100 4.0 4.5 5.0 5.5 6.0 6.5 7.0 gs v , gate-to-source voltage (v) d i , drain-to-source c urrent (a) a v = 25v 20s pulse w idth t = 150c t = 25c ds j j IRFL4105 2014-8-9 3 www.kersemi.com
fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 200 400 600 800 1000 1200 1 10 100 c, capacitance (pf) ds v , drain-to-source volta g e ( v ) a v = 0v , f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 10203040 q , total g ate char g e ( nc ) g v , g ate-to-source voltage (v) gs a for test circuit s ee figure 9 v = 24 v v = 15 v ds ds i = 3.7 a d 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a 0.1 1 10 100 0.1 1 10 100 v , drain-to-source volta g e ( v ) ds i , drain current (a) ope ration in this area limite d by r d ds(on) t = 25c t = 150c sin g le p u ls e 10s 100s 1ms 10ms a a j IRFL4105 2014-8-9 4 www.kersemi.com
q g q gs q gd v g charge + - v ds 10v pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 10a. switching time test circuit fig 9a. basic gate charge waveform fig 9b. gate charge test circuit fig 11. maximum effective transient thermal impedance, junction-to-ambient 0.01 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 t , rectangular pulse duration (sec) 1 d = 0.50 0.01 0.02 0.05 0.10 0.20 s in g l e p u l s e (thermal response) a thermal response (z ) thja p t 2 1 t dm n otes: 1. d uty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a 10v IRFL4105 2014-8-9 5 www.kersemi.com
fig 12c. maximum avalanche energy vs. drain current 0 50 100 150 200 250 300 25 50 75 100 125 150 j e , single pulse avalanche energy (m j) as a startin g t , junction temperature ( c ) v = 25v i to p 1.7a 3.0a bottom 3.7a dd d fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v IRFL4105 2014-8-9 6 www.kersemi.com
p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? * fig 13. for n-channel hexfets IRFL4105 2014-8-9 7 www.kersemi.com
package outline sot-223 (to-261aa) outline sot-223 part marking information date code (yw w ) y = last digit of the year ww = week bottom part number top international re ctifie r log o exa mple : this is an irfl014 w a fer lo t co de xxxxxx 314 fl014 IRFL4105 2014-8-9 8 www.kersemi.com
sot-223 outline tape & reel information 4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 2.05 (.080) 1.95 (.077) 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272) 1.60 (.062) 1.50 (.059) typ . 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 2.30 (.090) 2.10 (.083) 16.30 (.641) 15.70 (.619) 0.35 (.013) 0.25 (.010) feed direction tr 13.20 (.519) 12.80 (.504) 50.00 (1.969) m in . 330.00 (13.000) max. notes : 1. controlling dimension: millimeter. 2. outline conforms to eia-481 & eia-541. 3. each o330.00 (13.00) reel co ntains 2,500 devices. 3 notes : 1. outline comforms to eia-418-1. 2. controlling dimension: millimeter.. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. 15.40 (.607) 11.90 (.469) 18.40 (.724) m ax . 14.40 (.566) 12.40 (.488) 4 4 IRFL4105 2014-8-9 9 www.kersemi.com
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