symbol v ds v gs i dm t j , t stg symbol ty p max 65 90 85 125 r jl 43 60 w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w 20 gate-source voltage drain-source voltage -30 continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v -3.5 -20 pulsed drain current b power dissipation a t a =25c junction and storage temperature range a p d c 1.4 1 -55 to 150 t a =70c i d -4.1 p-channel enhancement mode field effect transistor features v ds (v) = -30v i d = -4.1 a r ds(on) < 52m ? (v gs = -10v) r ds(on) < 87m ? (v gs = -4.5v) general description provide excellent r ds(on) with low gate charge. this device is suitable for use as a load switch or in pwm applications. to-236 (sot-23) top view g d s AO3407 the AO3407 uses advanced trench technology to g s d 2014-5-26 1 www.kersemi.com
symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -1 -1.8 -3 v i d(on) -10 a 40.5 52 t j =125c 57 73 64 87 m ? g fs 5.5 8.2 s v sd -0.77 -1 v i s -2.2 a c iss 700 pf c oss 120 pf c rss 75 pf r g 10 ? q g 14.3 nc q g 7nc q gs 3.1 nc q gd 3nc t d(on) 8.6 ns t r 5ns t d(off) 28.2 ns t f 13.5 ns t rr 27 ns q rr 15 nc dynamic parameters maximum body-diode continuous current gate resistance v gs =0v, v ds =0v, f=1mhz v gs =0v, v ds =-15v, f=1mhz input capacitance output capacitance turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =3.6 ? , r gen =3 ? turn-off fall time turn-on delaytime switching parameters total gate charge (4.5v) gate source charge gate drain charge total gate charge (10v) v gs =-4.5v, v ds =-15v, i d =-4a m ? v gs =-4.5v, i d =-3a i s =-1a,v gs =0v v ds =-5v, i d =-4a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-24v, v gs =0v v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =-4a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-4.5v, v ds =-5v v gs =-10v, i d =-4.1a reverse transfer capacitance i f =-4a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. electrical characteristics (t j =25c unless otherwise noted) ksm3407 2014-5-26 2 www.kersemi.com
0 5 10 15 20 0.00 1.00 2.00 3.00 4.00 5.00 -v ds (volts) figure 1: on-region characteristics -i d (a) v gs =-3v -3.5v -4v -10v -4.5v -5v 0 2 4 6 8 10 01234 -v gs (volts) figure 2: transfer characteristics -i d (a) 25c 125c v ds =-5v 20 40 60 80 100 0246810 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =-4.5v v gs =-10v 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v v gs =-4.5v 20 40 60 80 100 120 140 160 246810 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) i d =-2a 25c 125c i d =-2a typical electrical and thermal characteristics ksm3407 2014-5-26 3 www.kersemi.com
s 0 2 4 6 8 10 0481216 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z t ja normalized transient thermal resistance 0.1 1 10 100 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 p s 10ms 1ms 0 .1 s 1 s 1 0s d c r ds(on) limited t j(max) =150c t a =25c v ds =-15v i d =-4a single pulse d=t o n / t t j,pk =t a +p dm .z t ja .r t ja r t ja =90c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 p s typical electrical and thermal characteristic ksm3407 2014-5-26 4 www.kersemi.com
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