/-'10ducts., dna. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn darlingtion power transistor PMD10K80 description ? high dc current gain ? collector-emitter sustaining voltage- vceo(sus)= sov(min) ? complement to type pmd11k80 applications ? designed for general purpose amplifier and low frequency switching applications absolute maximum ratings(tc=25c) symbol vcbo vceo vebo ic icp ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current -continuous collector current-peak base current collector power dissipation@tc=25"c junction temperature storage temperature value 80 80 5.0 12 20 0.2 150 150 -65-200 unit v v v a a a w ?c ?c thermal characteristics symbol rth j-c parameter thermalresistance, junction to case max 1.17 unit r/w pin 1.base 2. emitter 3. collect or (case) to-3 package f-n-1 i i dw a b c d e g h r l h g u v iran mm max 3900 25.30 7.80 0.90 1.40 26*7 8.30 1.10 1.60 10.92 546 1140 16.75 19.40 4.00 30.00 4.30 13.50 1705 19.62 420 3020 450 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verity that datasheets are current before placing orders. quality semi-conductors
silicon npn darlingtion power transistor PMD10K80 electrical characteristics 10=25^0 unless otherwise specified symbol vceo(sus) vce(sat) vee{sat) vbe(oii) icer iebo hfe fi cob parameter collector-emitter sustaining voltage collector-emitter saturation voltage base-emitter saturation voltage base-emitter on voltage collector cutoff current emitter cut-off current dc current gain current-gain ? bandwidth product output capacitance conditions lc=100ma;lb=0 lc= 6a; ib= 24ma lc= 6a; ib= 24ma lc= 6a; vce= 3v vce= 80v; rbe= 1 k q vce= 80v; rbe= 1 k q , tc=1 50"c veb= 5v; lc= 0 lc= 6a; vce= 3v lc= 5a; vce= 3v, f= 1khz ie= 0; vcb= 10v; ftest= 1.0mhz min 80 1000 4 max 2.0 2.8 2.8 1.0 5.0 2.0 20000 300 unit v v v v ma ma mhz pf
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