s m d ty p e w w w . k e x i n . c o m . c n 1 m o s f e t feat ur es v d s ( v ) = - 12v i d = - 5.1a ( v g s = - 4.5v ) r d s ( o n ) 35m ( v g s = - 4.5v ) r d s ( o n ) 45m ( v g s = - 2.5v ) r d s ( o n ) 59m ( v g s = - 1.8v ) 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.gate 2.source 3.drain 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 g s d 2 3 1 a bs olut e max imum r at ings ta = 25 s y m bol 5 s ec s teady s tate uni t v d s v g s t a = 25 - 7.1 - 5.1 t a = 70 - 5.7 - 4.0 i d m t a = 25 2.5 1.25 t a = 70 1.6 0.8 r t h ja r t h jf t j t st g 150 - 55 to 150 j unc ti on t em per atur e s tor age t em per atur e range a w conti nuous dr ai n cur r ent p ow er di s s i pati on p ul s ed dr ai n cur r ent /w p d i d t her m al res i s tanc e.j unc ti on- to - a m bi ent t her m al res i s tanc e.j unc ti on- to- f oot - 20 100 50 dr ai n- s our c e v ol tage g ate- s our c e v ol tage p ar am eter v - 12 8 p b? f r ee p ac k age m ay be a v ai l abl e. t he g ? s uffi x denotes a p b? f r ee lead f i ni s h p-cha nne l mo s f e t si2 3 3 3 cds-hf ( k i 2 3 3 3 c d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 2 m o s f e t e lec t r ic al c har ac t er is t ic s ta = 25 p ar am eter s y m bol t es t condi ti ons m i n t y p m ax uni t dr ai n- s our c e b r eak dow n v ol tage v d s s i d = - 250 a , v g s = 0v - 12 v v d s = - 12v , v g s = 0v - 1 v d s = - 12v , v g s = 0v , t j = 55 - 10 g ate- b ody l eak age c ur r ent i g s s v d s = 0v , v g s = 8v 100 na g ate t hr es hol d v ol tage v g s ( t h ) v d s = v g s i d = - 250 a - 0.4 - 1 v v g s = - 4.5v , i d = - 5.1a 35 v g s = - 2.5v , i d = - 4.5a 45 v g s = - 1.8v , i d = - 2.0a 59 o n s tate dr ai n c ur r ent * 1 i d ( o n ) v g s = - 4.5v , v d s = - 5v - 20 a f or w ar d t r ans c o nduc tan c e * 1 g fs v d s = - 5v , i d = - 1.9a 1.6 s g ate res i s tanc e r g f= 1.0m hz 4.0 input capac i tanc e c i ss 1225 o utput capac i tanc e c o ss 315 rev er s e t r ans fer capac i tanc e c r ss 260 v g s = - 4.5v , v d s = - 6v , i d = - 5.1a 15 25 9 15 g ate s our c e char ge q g s 1.9 g ate dr ai n char ge q g d 3.8 t ur n- o n del ay t i m e t d ( o n ) 13 20 t ur n- o n ri s e t i m e t r 35 60 t ur n- o ff del ay t i m e t d ( o f f ) 45 70 t ur n- o ff f al l t i m e t f 12 20 b ody di ode rev er s e rec ov er y char ge q r r 20 40 nc b ody d i ode re v er s e rec ov er y t i m e t r r 32 50 rev er s e rec ov er y f al l t i m e t a 16 rev er s e rec ov er y ri s e t i m e t b 16 m ax i m um b ody - di ode conti nuous cur r ent i s t c = 25 - 1.0 p ul s e di ode f or w ar d cur r ent * 1 i s m - 20 di ode f or w ar d v ol tage v s d i s = - 1.0a ,v g s = 0v - 0.7 - 1.2 v ns t otal g ate char ge q g v g s = - 2.5v , v d s = - 6v , i d = - 5.1a if = 1.0 a , di /dt = 100 a / us ,t j = 25 a pf nc v g s = - 4.5v , v d s = - 6v , r l = 6 ,r g e n = 1 i d = - 1.0a ns v g s = 0v , v d s = - 6v , f= 1m hz z er o g a te v ol t age dr ai n cur r ent i d s s a m s tati c dr ai n- s our c e o n- res i s tanc e * 1 r d s ( o n ) * 1p ul s e tes t: p w 300u s duty c y c l e 2% . mar k ing m ar k i ng o 3* f p-cha nne l mo s f e t si2 3 3 3 cds-hf ( k i 2 3 3 3 c d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 3 m o s f e t ty pic al c har ac t er is it ic s o u t p u t ch a r a ct er ist ic s on -re sistan ce vs. drain cu r r en t an d gate vo ltag e g a t e char g e 0 5 10 15 20 0 . 0 0. 5 1 . 0 1. 5 2. 0 v d s - drain - to - source v oltage (v) - drain c urrent (a) i d v g s = 5 t hr u 2. 5 v v g s = 1 v v g s = 1. 5 v v gs = 2 v 0.00 0.02 0.04 0.06 0.0 8 0.10 0 5 10 15 20 - on - r esistanc e ( ?) r ds(o n ) i d - drain c urrent (a) v g s = 1. 8 v v gs = 4. 5 v v gs = 2. 5 v 0 2 4 6 8 0 5 10 15 20 25 - gate - t o - so urce v oltage ( v ) q g - t otal gate charg e (nc) v g s v d s = 6 v i d = 5. 1 a v d s = 9 v v d s = 3 v tran sfer ch aracteristics cap acitan ce on -resistanc e vs. jun ctio n t emp erature 0.0 0.5 1.0 1.5 2.0 0 . 0 0. 3 0 . 6 0. 9 1 . 2 1. 5 v g s - ga t e - t o - source v oltage ( v ) - drai n c urrent (a) i d t c = 25 c t c = 125 c t c = - 55 c c r s s 0 600 1200 1 8 00 2400 0 3 6 9 12 c is s v d s - drain - to - source v oltage ( v) c - capacitance (pf) c o s s 0. 6 0 . 8 1. 0 1. 2 1. 4 1. 6 - 50 - 25 0 25 50 75 100 125 150 t j - j unction t emperat ure (c) (normalized) - on - r esistance r ds(on ) v gs = 4. 5 v v g s = 2. 5 v i d = 5. 1 a ( ? ) p-cha nne l mo s f e t si2 3 3 3 cds-hf ( k i 2 3 3 3 c d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 4 m o s f e t . ty pic al c har ac t er is it ic s source -drain diod e fo rward v o ltag e t h resho ld vo ltag e 0 . 0 0 . 2 0. 4 0. 6 0 . 8 1. 0 1. 2 v s d - so urce - to - drain v oltage (v) - so u rce c u rren t (a) i s 1 0.01 0.001 0 .1 10 100 t j = 150 c t j = - 55 c t j = 25 c - 0.2 - 0.1 0 .0 0 .1 0 .2 0 .3 0 .4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v arianc e ( v) v g s ( t h ) t j - t emperat ure (c) i d = 1 m a on-resist a n ce vs. gate-to-so urce vol t age single p u lse po wer 0.00 0.02 0.04 0.06 0.0 8 0.10 0.12 0.14 0 1 2 3 4 5 - on - r esistanc e ( ?) r d s ( o n ) v g s - ga t e - t o - so urce v oltage ( v ) t j = 25 c t j = 125 c i d = 5. 1 a 0 2 4 6 8 10 0.01 0.1 1 10 100 1000 time (s) p o w er ( w ) t a = 25 c safe operating area v d s - drain - to - source v oltage ( v) * v gs > mi n i m u m v gs at which r d s ( o n ) is specified 100 1 0.1 1 10 100 0.01 10 - drain c urrent (a) i d 0.1 t a = 25 c single p u lse 100 s, dc limited b y r d s ( o n ) * b v dss limited 1 0 m s 1 m s 100 s 10 0 m s 1 s , 10 s p-cha nne l mo s f e t si2 3 3 3 cds-hf ( k i 2 3 3 3 c d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 5 m os f e t ty pic al c har ac t er is it ic s n o rma lized th ermal t r ansie n t im ped ance, j unction -to -a mbie nt 10 - 3 10 - 2 1 10 1000 10 - 1 10 - 4 100 0 . 2 0 . 1 square w ave p ulse d uration (s) n ormalize d ef fecti v e t ransient thermal i mpedance 1 0 . 1 0.01 d u t y c y c l e = 0 . 5 single p u lse 0.02 0.05 norm alize d th ermal t r ansie n t im ped ance, junc tion -to-f o o t 10 - 3 10 - 2 0 1 1 10 - 1 10 - 4 0 . 2 0 . 1 d u t y c y c l e = 0 . 5 square w ave p ulse d uration (s) normalize d ef fecti v e t ransient therma l i mpedance 1 0 . 1 0.01 single p u lse 0.02 0.05 t 1 t 2 n o te s : p dm 1 . d u ty c yc l e , d = 2 . p e r u n i t b a s e = r thj f = 5 0 c/ w 3 . t j m - t a = p dm z thj a (t ) t 1 t 2 4 . s u rfa c e m o u n t e d p-cha nne l mo s f e t si2 3 3 3 cds-hf ( k i 2 3 3 3 c d s - h f)
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