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silicon phototransistor sdp8406 description features side-looking plastic package 50? (nominal) acceptance angle wide sensitivity ranges mechanically and spectrally matched to sep8506 and sep8706 infrared emitting diodes the sdp8406 is an npn silicon phototransistor molded in a side-looking clear plastic package. the chip is positioned to accept radiation through a plastic lens from the side of the package. dim_017.ds4 infra-21.tif outline dimensions in inches (mm) 3 plc decimals 0.005(0.12) tolerance 2 plc decimals 0.020(0.51) honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 120
silicon phototransistor sdp8406 electrical characteristics units test conditions min parameter symbol typ max absolute maximum ratings (25?c free-air temperature unless otherwise noted) collector-emitter voltage 30 v emitter-collector voltage 5 v power dissipation 100 mw [] operating temperature range -40?c to 85?c storage temperature range -40?c to 85?c soldering temperature (5 sec) 240?c notes 1. derate linearly from 25?c free-air temperature at the rate of 0.78 mw/?c. schematic
silicon phototransistor sdp8406 switching time test circuit cir_015.cdr
silicon phototransistor sdp8406 spectral responsivity gra_036.ds4 wavelength - nm r e l a t i v e r e s p o n s e 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 400 600 800 1000 1200 fig. 5 coupling characteristics with sep8506 gra_031.ds4 lens-to-lens separation - inches l i g h t c u r r e n t - m a 0.1 0.2 0.4 0.6 1.0 2 4 6 10 0.01 0.02 0.05 0.1 0.2 0.5 1.0 i f = 20 ma v ce = 5v t a = 25 c fig. 6 all performance curves show typical values honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 123

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