v rrm = 1000 v - 1400 v i f =150 a features ? high surge capability do-8 package ? not esd sensitive note: 1. standard polarity: stud is cathode. 3. stud is base. parameter symbol 1n4594(r) 1n4595(r) unit repetitive peak reverse voltage v rrm 1000 1200 v dc blocking voltage v dc 1000 1200 v continuous forward current i f 150 150 a 1N4596(r) 1400 1400 150 conditions ? types from 1000 v to 1400 v v rrm 2. reverse polarity (r): stud is anode. 1n4594(r) thru 1N4596(r) t c 110 c maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) silicon standard recover y diode continuous forward current i f 150 150 a i 2 t for fusing i 2 t 60 hz half wave 37200 37200 a 2 sec operating temperature t j -55 to 150 -55 to 150 c storage temperature t stg -55 to 150 -55 to 150 c parameter symbol 1n4594(r) 1n4595(r) unit diode forward voltage 1.5 1.5 thermal characteristics thermal resistance, junction - case r thjc 0.35 0.35 c/w -55 to 150 -55 to 150 1N4596(r) 1.5 3.5 i f,sm 150 3000 t c = 25 c, t p = 8.3 ms v electrical characteristics, at tj = 25 c, unless otherwise specified reverse current i r v r = v rrm , t j = 110 c 4.5 4 ma 0.35 surge non-repetitive forward current, half sine wave i f = 150 a, t j = 110 c c conditions 3000 3000 a v f 37200 www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 1
1n4594(r) thru 1N4596(r) www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. 1n4594(r) thru 1N4596(r) do-8 (do-205aa) g d h i f b inches millimeters min max min max a 3/8-24 unf b ----- 0.930 ----- 23.5 c 1.050 1.060 26.67 26.92 d 4.300 4.700 109.22 119.38 e ----- 0.690 ----- 17.00 f 0.260 ----- 6.50 ----- g ----- 0.940 ----- 24.00 h ----- 0.600 ----- 15.23 i 0.276 0.286 7.010 7.260 a e c www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 3
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