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| KSC2330 transistor (npn) feature power dissipation p cm: 1 w (tamb=25 ) collector current i cm: 0.1 a collector-base voltage v (br)cbo : 300 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v(br) cbo ic= 100a, i e =0 300 v collector-emitter breakdown voltage v(br) ceo i c = 5ma, ib=0 300 v emitter-base breakdown voltage v(br) ebo i e = 100a, i c =0 7 v collector cut-off current i cbo v cb =200v, ie=0 0.1 a dc current gain h fe v ce =10 v, ic= 20ma 40 240 collector-emitter saturation voltage v ce(sat) i c = 10m a, i b = 1ma 0.5 v transition frequency f t v ce = 30 v, i c = 10ma 50 mhz classification of h fe rank r o y range 40-80 70-140 120-240 1 2 3 to-92l 1. emitter 2. collector 3. base KSC2330 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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