2. 30? 0. 05 1. 25? 0. 05 1 . 3 0 ? 0 . 0 3 0 . 3 0 2 . 0 0 ? 0 . 0 5 1 . 0 1 r e f MMST5401 transistor (pnp) features power dissipation p cm: 0.2 w (tamb=25 ) collector current i cm: -0.2 a collector-base voltage v (br)cbo : -160 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= -100 a, i e =0 -160 v collector-emitter breakdown voltage v (br)ceo ic= -1 ma, i b =0 -150 v emitter-base breakdown voltage v (br)ebo i e = -10 a, i c =0 -5 v collector cut-off current i cbo v cb = -120 v, i e =0 -50 na emitter cut-off current i ebo v eb = -3 v, i c =0 -50 na h fe(1) v ce =- 5 v, i c = -1 ma 50 h fe(2) v ce = -5 v, i c = -10 ma 60 240 dc current gain h fe(3) v ce = -5 v, i c = -50 ma 50 v ce(sat) i c = -10 ma, i b = -1 ma -0.2 v collector-emitter saturation voltage v ce(sat) i c =- 50 ma, i b =- 5 ma -0.5 v v be(sat) i c = -10 ma, i b = -1 ma -1 v base-emitter voltage v be(sat) i c =- 50 ma, i b =- 5 ma -1 v transition frequency f t v ce = -10 v, i c = -10 ma, f=100mhz 100 300 mhz collector output capacitance c ob v cb = -10 v, i e =0, f= 1 mhz 6 pf noise figure nf v ce = -5 v, i c = -0.2 ma, f= 1k hz, rg=1 0 ? 8 db marking k4m unit: mm sot-323 1. base 2. emitter 3. collector MMST5401 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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