downloaded from elcodis.com electronic components distributor s mhop microelectronics c orp. a stb/p60l60a symbolv ds v gs i dm e as 1.32 62.5 w a p d c 76 -55 to 150 i d units parameter 60 50 145 c/w vv 20 t c =25 c gate-source voltage drain-source voltage thermal characteristics c/w 125 mj product summary v dss i d r ds(on) (m ) typ 60v 50a 22 @ vgs=4.5v 16 @ vgs=10v features super high dense cell design for extremely low rds(on). high power and current handling capability. to-220 & to-263 package. s t b s e r ie s t o-263(dd-p ak ) g s d s t p s e r ie s t o-220 s d g s g d n-channel logic level enhancement mode field effect transi stor absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous a t c =25 c -pulsed b a avalanche energy c maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-case thermal resistance, junction-to-ambient r jc r ja ver 1.0 www.samhop.com.tw jul,31,2009 1 details are subject to change without notice. a 32 t c =100 c t c =100 c 30 w green product
downloaded from elcodis.com electronic components distributor 4 symbol min typ max units bv dss 60 v 1 i gss 100 na v gs(th) 1 v 16 g fs 30 s v sd c iss 2190 pf c oss 218 pf c rss 144 pf q g 54 nc 84 nc q gs 150 nc q gd 46 t d(on) 33 ns t r 5.4 ns t d(off) 10.8 ns t f ns gate-drain charge v ds =15v,v gs =0v switching characteristics gate-source charge v dd =15v i d =1a v gs =10v r gen =60 ohm total gate charge rise time turn-off delaytime v ds =15v,i d =25a,v gs =10v fall time turn-on delaytime m ohm v gs =10v , i d =25a v ds =10v , i d =25a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs , i d =250ua v ds =48v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 3 v gs =4.5v , i d =20a 20 22 30 m ohm b f=1.0mhz b v ds =15v,i d =25a, v gs =10v drain-source diode characteristics v gs =0v,i s =25a 0.84 1.3 v notes a.pulse test:pulse width < 300us, duty ctcle < 2%. b.guaranteed by design, not subject to production testing. c.starting t j =25 c,l=1.25mh,v dd =30v,v gs =10v.(see figure13) _ _ stb/p60l60a ver 1.0 www.samhop.com.tw jul,31,2009 2 2 i s maximum continuous drain-source diode forward current 25 a
downloaded from elcodis.com electronic components distributor stb/p60l60a ver 1.0 www.samhop.com.tw jul,31,2009 3 t j ( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current figure 4. on-resistance variation with drain vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation tj, junction temperature( c ) figure 6. breakdown voltage variation and gate voltage current and temperature with temperature with temperature v g s =10v 0.5 1.0 1.5 2.0 2.5 3.0 v g s = 4 v v g s = 5v v g s = 6 v 48 36 24 12 0 60 t j=125 c 0. 0 1.2 2.4 3.6 4.8 6.0 7.2 25 c -55 c 60 50 40 30 20 10 1 12 24 36 48 60 1 v g s =10v 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 25 50 75 150 100 125 v g s =10v i d =25a 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 v ds =v g s i d =250ua -50 -25 0 25 50 75 100 125 150 1.4 1.3 1.2 1.1 1.0 0.9 0.8 i d =250ua 0 0 12 24 36 48 60
downloaded from elcodis.com electronic components distributor stb/p60l60a ver 1.0 www.samhop.com.tw jul,31,2009 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area switching time(ns) rg, gate resistance( ) figure 11. switching characteristics 90 75 60 45 30 0 0 i d = 25a 15 25 c 75 c 125 c 10 1 70 125 c 0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 2400 2000 1600 1200 800 400 0 c is s c os s c rs s 10 86 4 2 0 v ds =15v i d =25a 0 5 10 15 20 25 30 35 40 25 c 75 c 2 4 6 8 10 1 10 100 1 10 100 300 vds=15v,id=1a vgs=10v 0.1 1 10 60 100 10 1 0.3 800 v gs =10v single pulse t a =25 c d c r ds (o n) l i mit 100us 10ms 1ms td(on) tr td(off ) tf
downloaded from elcodis.com electronic components distributor t p v ( br )d ss i a s r g i a s 0.0 1 t p d .u .t l v d s + - v d d d r i v e r a 15v 20v 0.01 0.1 1 2 0.00001 0.0001 0.001 0.01 0.1 1 p dm t 1 t 2 1. r j c (t)=r (t) * 2. =s ee datas heet 3. t j m- t c = p * (t ) 4. duty c ycle, d=t1/t2 r j c r j c r j c 10 s ingle p uls e 0.02 0.05 0.1 0.2 d=0.5 0.01 stb/p60l60a ver 1.0 www.samhop.com.tw jul,31,2009 5 unclamped inductive test circuit unclamped inductive wave forms figure 13a. figure 13b. square wave pulse duration (msec) figure 14. normalized thermal transient impedance curve r(t),normalized effective transient thermal impedance
downloaded from elcodis.com electronic components distributor stb/p60l60a ver 1.0 www.samhop.com.tw jul,31,2009 6
downloaded from elcodis.com electronic components distributor stb/p60l60a ver 1.0 www.samhop.com.tw jul,31,2009 7
downloaded from elcodis.com electronic components distributor to-220/263ab tube stb/p60l60a ver 1.0 www.samhop.com.tw jul,31,2009 8
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