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Datasheet File OCR Text: |
npn switching transistor BFX85 characteristics tj = 25 ' c unless otherwise specified. symbol icbo !ebo hfe vcesat veesat co fr parameter collector cut-off current emitter cut-off current dc current gain collector-emitter saturation voltage base-emitter saturation voltage collector capacitance transition frequency conditions ie = 0; vcb = 80 v |e = 0; vcb = 80v;tj = 100 >c ie = 0; vcb = 100v |e = 0; vcb= 100v;tj = 100c lc = 0; veb = 5 v lc = 0;veb = 5v;tj=100c lc = 0; veb = 6 v lc= 10ma; vce = 10v lc=150ma;vce=10v lc = 500ma;vce=10v lc=1 a;vce=10v ig = 1 0 ma; ib = 1 ma lc= 150 ma; ib = 15 ma lc = 500 ma; ib = 50 ma lc=1 a; ib = 100ma \= 10 ma; ib = 1 ma lc = 150ma; ib = 15ma lc = 500 ma; ib = 50 ma lc=1 a; ib = 100ma |e = ie = 0; vcb = 10v;f=1 mhz lc = 50 ma; vce = 10 v; f = 100 mhz min. - - - - - - - 50 70 30 15 - - - - - - - - - 50 switching times (between 10% and 90% levels) see fig. 2 ton td tr toff ts tf turn-on time delay time rise time turn-off time storage time fall time icon = 150 ma; leon = 15 ma; lboff = -15ma - - - - - - typ. 2 0.1 10 0.5 2 0.1 10 90 142 90 50 150 150 0.35 0.66 0.69 0.92 1.15 1.4 7 185 max. 50 2.5 500 30 50 2.5 500 - _ - - 200 350 1 1.6 1.2 1.3 1.5 2 12 - unit na ha na ha na ma na mv mv v v v v v v pf mhz 55 15 40 360 300 60 - - - - - - ns ns ns ns ns ns |
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