sop8 plastic-encapsulate mosfets CJQ9926 dual n-channel mosfet feature z advanced trench process technology z high density cell design for ultra low on-resistance z high power and current handing capability z ideal for liion battery pack applications marking: q9926 maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v continuous drain current * i d 4.8 a pulsed drain current i dm 30 a power dissipation * p d 1.25 w thermal resistance from junction to ambient * r ja 100 / w junction temperature t j 150 storage temperature t stg -55~+150 * surface mounted on 1? x 1? fr4 board. sop8 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 20 v zero gate voltage drain current i dss v ds =20v,v gs = 0v 1 a gate-body leakage current i gss v gs =12v, v ds = 0v 100 na gate threshold voltage (note 1) v gs(th) v ds =v gs , i d =250a 0.6 1.2 v v gs =2.5v, i d =5a 40 m ? drain-source on-resistance (note 1) r ds(on) v gs =4.5v, i d =6a 30 m ? forward transconductance (note 1) g fs v ds =15v, i d =6a 15 s switching characteristics (note 2) turn-on delay time t d(on) 35 ns turn-on rise time t r 60 ns turn-off delay time t d(off) 75 ns turn-off fall time t f v gen =4.5v,v dd =15v, r gen =6 ? , i d =1a, r l =15 ? 30 ns total gate charge q g 20 nc gate-source charge q gs 3 nc gate-drain charge q gd v ds =15v,v gs =4.5v,i d =6a 3.3 nc source-drain diode characteristics maximum diode forward current i s 1 a diode forward voltage (note 1) v sd i s =1.7a,v gs =0v 1.2 v source-drain reverse recovery time t rr i f = 1.7 a, di/dt = 100 a/ s 80 ns notes : 1. pulse test : pulse width 300s, duty cycle 2%. 2. guaranteed by design, not subject to production 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
024681 0 0 20 40 60 80 100 0123 0 2 4 6 8 10 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 024681 0 0 5 10 15 20 25 30 0 6 12 18 24 30 0 20 40 60 80 i d =6a i d r ds(on) ?? ta=25 o c v gs r ds(on) ?? gate to source voltage v gs (v) ta=25 o c transfer characteristics drain current i d (a) gate to source voltage v gs (v) 20 ta=25 o c 0.3 3 v sd i s ?? source current i s (a) source to drain voltage v sd (v) 3.0v 2.5v cj q 992 6 v gs =5.0v 4.5v 4.0v 3.5v v gs =1.5v 2.0v output characteristics drain current i d (a) drain to source voltage v ds (v) on-resistance r ds(on) (m ) on-resistance r ds(on) (m ) v gs =2.5v v gs =4.5v ta=25 o c drain current i d (a) 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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