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| geometry principal device type cmo5v0lc gross die per 5 inch wafer 122,493 process CPZ40X transient voltage suppressor 5 volt tvs chip process details die size 13.4 x 13.4 mils die thickness 5.5 mils cathode bonding pad area 3.9 x 6.7 mils top side metalization al - 30,000? back side metalization au - 9,000? www.centralsemi.com r0 (9-january 2013)
process CPZ40X typical electrical characteristics www.centralsemi.com r0 (9-january 2013) |
Price & Availability of CPZ40X
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