CXDM1002N surface mount silicon n-channel enhancement-mode mosfet description: the central semiconductor CXDM1002N is a high voltage silicon n-channel enhancement-mode mosfet designed for high speed pulsed amplifier and driver applications. this mosfet offers high voltage, low r ds(on) , low threshold voltage, and low leakage current. marking: full part number maximum ratings: (t a =25c) symbol units drain-source voltage v ds 100 v gate-source voltage v gs 20 v continuous drain current (steady state) i d 2.0 a maximum pulsed drain current, tp=10s i dm 7.0 a power dissipation p d 1.2 w operating and storage junction temperature t j , t stg -55 to +150 c thermal resistance ja 104 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i gssf , i gssr v gs =20v, v ds =0 100 na i dss v ds =100v, v gs =0 100 na bv dss v gs =0, i d =250a 100 v v gs(th) v gs =v ds , i d =250a 1.5 2.1 2.5 v v sd v gs =0, i s =1.0a 1.1 v r ds(on) v gs =10v, i d =2.0a 125 300 m r ds(on) v gs =4.5v, i d =1.0a 140 350 m c rss v ds =25v, v gs =0, f=1.0mhz 48 pf c iss v ds =25v, v gs =0, f=1.0mhz 550 pf c oss v ds =25v, v gs =0, f=1.0mhz 45 pf q g(tot) v ds =80v, v gs =5.0v, i d =2.0a 6.0 nc q gs v ds =80v, v gs =5.0v, i d =2.0a 1.2 nc q gd v ds =80v, v gs =5.0v, i d =2.0a 3.0 nc t on v dd =50v, v gs =5.0v, i d =3.5a 32 ns t off r g =4.7 50 ns features: ? low r ds(on) (140m typ @ v gs =4.5v) ? high voltage (v ds =100v) ? logic level compatibility ? 2kv esd protection applications: ? load/power switches ? power supply converter circuits ? battery powered portable equipment sot-89 case r1 (19-march 2013) www.centralsemi.com
CXDM1002N surface mount silicon n-channel enhancement-mode mosfet lead code: 1) gate 2) drain 3) source marking: full part number sot-89 case - mechanical outline pin configuration www.centralsemi.com r1 (19-march 2013)
CXDM1002N surface mount silicon n-channel enhancement-mode mosfet typical electrical characteristics r1 (19-march 2013) www.centralsemi.com
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