|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
geometry process details principal device type ctlsh2-40m832 gross die per 4 inch wafer 4,608 process CPD79 schottky rectifier 2 amp schottky rectifier chip die size 49 x 49 mils die thickness 9.8 mils anode bonding pad area 39 x 39 mils top side metalization al/ni/au - 30,000?/3,000?/1,500? back side metalization ti/ni/au - 1,600?/5,500?/1,600? www.centralsemi.com r0 (19-july 2010)
process CPD79 typical electrical characteristics www.centralsemi.com r0 (19-july 2010) |
Price & Availability of CPD79 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |