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| geometry principal device type cmntvs12v gross die per 5 inch wafer 84,926 process CPZ33R transient voltage suppressor 12 volt quad tvs chip process details die size 14.2 x 14.2 mils die thickness 3.9 mils cathode bonding pad areas (4) 4.7 mils diameter each top side metalization al - 13,000? back side metalization au - 12,000? www.centralsemi.com r0 (3-january 2012)
process CPZ33R typical electrical characteristics www.centralsemi.com r0 (3-january 2012) |
Price & Availability of CPZ33R
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