(l^asu ^e.mi-(2ond\jlcto\ (inc. c/ 4/ 20 stern ave. springfield, new jersey 07081 u.s.a. vhp power transistor telephone: (973) 376-2922 (212)237-6005 fax: (973) 376-8960 BLY87C description n-p-n silicon planar epitaxial transistor intended for use in class-a, b and c operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 v. the transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage 16,5 v. it has a 3/8" capstan envelope with a ceramic cap. all leads are isolated from the stud. quick reference data r.f. performance up to th = 25 "c in an unneutralized common-emitter class-b circuit mode of operation c.w. c.w. vce v 13,5 12,5 f mhz 175 175 pl w 8 8 gp db > 12,0 typ. 11,5 11 % > 60 typ. 65 zj q 2,2+jo,4 - yl ms 96-j28 - pin configuration pinning-sot120 fig.1 simplified outline and symbol. pin 1 2 3 4 description collector emitter base emitter nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use ni semi-conductors encourages customers to verify that datasheets are current before placing orders. qunlih/
vhf power transistor BLY87C ratings limiting values in accordance with the absolute maximum system (iec 134) collector-emitter voltage (vbe = 0) peak value vcesm collector-emitter voltage (open base) vceo emitter-base voltage (open collector) vebo collector current (average) iqav) collector current (peak value); f> 1 mhz icm r.f. power dissipation (f > 1 mhz); tmb = 25 c prt storage temperature tstg operating junction temperature tj 10 fig.2 d.c. soar. 36 v 18 v 4 v 1,5 a 4,0 a 20 w -65 to + 150 "c max. 200 "c max. max. max. max. max. max. 50 th(oc) 100 i continuous d.c operation ii continuous r.f. operation iii short-time operation during mismatch fig.3 r.f. power dissipation; vce ^ 16,5 v; f> 1 mhz. thermal resistance (dissipation = 8 w; tmb = 73,5 "c, i.e. th = 70 c) from junction to mounting base (d.c. dissipation) from junction to mounting base (r.f. dissipation) from mounting base to heatsink rfh j-mb(dc) rth j-mb(rf) rfh mb-h 10,7 km/ 8,6 km/ 0,45 km/
vhp power transistor BLY87C characteristics tj = 25 c collector-emitter breakdown voltage vbe = 0; lc = 5 ma collector-emitter breakdown voltage open base; lc = 25 rna emitter-base breakdown voltage open collector; ie = 1 ma collector cut-off current vbe = 0; vce=18v second breakdown energy; l = 25 mh; f = 50 hz open base rbe = 1 0 q d.c. current gain '1' lc = 0,75 a; vce = 5 v collector-emitter saturation voltage <1) ic = 2a; ib = 0,4 a transition frequency at f = 1 00 mhz <1> -ie = 0,75 a; vcb = 13,5v -ie = 2 a; vcb = 13,5v collector capacitance at f = 1 mhz ie = le = 0; vcb = 13,5v feedback capacitance at f = 1 mhz lc= 100ma; vce= 13,5v collector-stud capacitance note 1. measured under pulse conditions: tp < 200 (is; 6 <0,02, v(br) ces v(br)ceo v(br)ebo ices esbo esbr hfe vcesat fy ft cc cre cos > 36 > 18 > 4 < 2 > 0,5 > 0,5 typ. 40 10 to 100 typ. 0,85 typ. 950 typ. 850 typ 16,5 typ. 12 typ. 2 v v v ma mj mj v mhz mhz pf pf pf
vhp power transistor BLY87C package outline studded ceramic package; 4 leads sot120a "t w i detail x 10 mm scale dimensions (millimetre dimensions are derived from the original inch dimensions) d2 unit 597 474 .4.. inches 0.283 0248 b 590 5,48 0,232 d.216 c 018 014 0007 0004 d 9,73 9,47 0,383 0.373 d1 8.39 812 0.330 0320 966 9,39 27.44 25,78 9.00 800 0.380 1080 0354 0,370 1.015 m 3.41 292 0134 0115 m, 1.66 1.39 0.065 0055 n 1283 11.17 n1 1.60 000 0063 0000 331 2.54 w 435 398 8-32 0.130 o 171 j 0.100 0.157 w1 038 0015 outline version references iec sot120a jedec eiaj european projection
|
