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  2sJ464 2009-09-29 1 toshiba field effect transistor silicon p chann el mos type (l 2 - -mosv) 2sJ464 chopper regulator, dc-dc converter and motor drive applications ? 4-v gate drive ? low drain-source on resistance: r ds (on) = 64 m ? (typ.) ? high forward transfer admittance: |y fs | = 15 s (typ.) ? low leakage current: i dss = ? 100 a (max) (v ds = ? 100 v) ? enhancement mode: v th = ? 0.8 to ? 2.0 v (v ds = ? 10 v, i d = ? 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss ?100 v drain-gate voltage (r gs = 20 k ) v dgr ?100 v gate-source voltage v gss 20 v dc (note 1) i d ?18 drain current pulse (note 1) i dp ?72 a drain power dissipation (tc = 25c) p d 45 w single pulse avalanche energy (note 2) e as 937 mj avalanche current i ar ?18 a repetitive avalanche energy (note 3) e ar 4.5 mj channel temperature t ch 150 c storage temperature range t stg ?55~150 c note: using continuously under heavy loads (e.g . the application of high temperature/cu rrent/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliabilit y handbook (?handling precautions?/derating concept and methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch-c) 2.78 c/w thermal resistance, channel to ambient r th (ch-a) 62.5 c/w note 1: ensure that the channel temperature does not exceed 150c. note 2: v dd = ? 50 v, t ch = 25c (initial), l = 3.56 mh, r g = 25 , i ar = ? 18 a note 3: repetitive rating: pulse width li mited by maximum junction temperature this transistor is an electrostatic-sensit ive device. please handle with caution. unit: mm jedec D jeita sc-67 toshiba 2-10r1b weight: 1.9 g (typ.) free datasheet http://
2sJ464 2009-09-29 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 v ? ? 10 a drain cut-off current i dss v ds = ?100 v, v gs = 0 v ? ? ?100 a drain-source breakdown voltage v (br) dss i d = ?10 ma, v gs = 0 v ?100 ? ? v gate threshold voltage v th v ds = ?10 v, i d = ?1 ma ?0.8 ? ? 2.0 v v gs = ?10 v, i d = ?9 a ? 64 90 drain-source on resistance r ds (on) v gs = ?4 v, i d = ?9 a ? 85 120 m forward transfer admittance ? y fs ? v ds = ?10 v, i d = ?9 a 7 15 ? s input capacitance c iss ? 2900 ? pf reverse transfer capacitance c rss ? 480 ? pf output capacitance c oss v ds = ?10 v, v gs = 0 v, f = 1 mhz ? 1000 ? pf rise time t r ? 25 ? turn-on time t on ? 45 ? fall time t f ? 25 ? switching time turn-off time t off duty < = 1%, t w = 10 s ? 170 ? ns total gate charge (gate-source plus gate-drain) q g ? 140 ? nc gate-source charge q gs ? 90 ? nc gate-drain (?miller?) charge q gd v dd ? ?80 v, v gs = ?10 v, i d = ? 18 a ? 50 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? ? 18 a pulse drain reverse current (note 1) i drp ? ? ? ? 72 a forward voltage (diode) v dsf i dr = ?18 a, v gs = 0 v ? ? 1.7 v reverse recovery time t rr ? 220 ? ns reverse recovery charge q rr i dr = ?18 a, v gs = 0 v di dr /dt = 50 a/ s ? 0.97 ? c marking ?10 v 0 v v gs r l = 5.55 v dd ? ?50 v i d = ?9 a v out 4.7 lot no. note 4 J464 part no. (or abbreviation code) note 4: a line under a lot no. identifies the indication of product labels. not underlined: [[pb]]/includes > mcv underlined: [[g]]/rohs compatible or [[g]]/rohs [[pb]] please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of product. the rohs is the directive 2002/ 95/ec of the european parliament and of the council of 27 january 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. free datasheet http://
2sJ464 2009-09-29 3 drain-source voltage v ds (v) i d ? v ds drain current i d (a) drain-source voltage v ds (v) i d ? v ds drain current i d (a) drain-source voltage v ds (v) gate-source voltage v gs (v) i d ? v gs drain current i d (a) gate-source voltage v gs (v) v ds ? v gs forward transfer admittance ? y fs ? (s) drain current i d (a) ? y fs ? ? i d drain current i d (a) r ds (on) ? i d drain-source on resistance r ds (on) ( ) 0 0 ? 8 ? 20 ? 5 ? 4 ? 12 ? 16 common source v ds = ? 10 v pulse test ? 1 ? 3 ? 4 ? 2 100 tc = ? 55c 25 ? 10 0 0 ? 8 ? 20 ? 2.0 ? 4 ? 12 ? 16 common source tc = 25c pulse test ? 0.4 ? 1.2 ? 1.6 v gs = ? 2 v ? 4 ? 0.8 ? 2.5 ? 3.5 ? 3 ? 4 ? 4.5 ? 8 ? 6 tc = ? 55c 100 25 1 ? 1 ? 10 ? 3 ? 100 30 10 3 5 50 100 ? 5 ? 30 ? 50 common source v ds = ? 10 v pulse test 0 0 ? 20 ? 50 ? 20 ? 8 ? 10 ? 30 ? 40 common source tc = 25c pulse test ? 4 ? 12 ? 16 ? 3 ? 4 v gs = ? 2.5 v ? 3.5 ? 10 ? 8 ? 6 ? 5 ? 4.5 0.01 ? 1 ? 100 ? 10 ? 3 ? 50 0.1 0.3 ? 30 v gs = ? 4 ? 10 v 0.05 common source tc = 25c pulse test 0.03 ? 5 0 0 i d = ? 18 a ? 0.5 ? 1.0 ? 1.5 ? 2.0 ? 2.5 ? 3.0 ? 2 ? 4 ? 6 ? 8 ? 10 ? 16 ? 12 ? 14 ? 9 ? 4.5 common source tc = 25c pulse test free datasheet http://
2sJ464 2009-09-29 4 case temperature tc (c) r ds (on) ? tc drain-source on resistance r ds (on) ( ) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) gate threshold voltage v th (v) drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) case temperature tc (c) v th ? tc drain power dissipation p d (w) case temperature tc (c) p d ? tc gate-source voltage v gs (v) total gate charge q g (nc) dynamic input/output characteristics drain-source voltage v ds (v) 0 0 40 80 120 160 20 40 60 80 ? 4 0 ? 80 160 80 ? 40 40 ? 1 ? 3 0 120 ? 2 common source v ds = ? 10 v i d = ? 1 ma pulse test 0 0 ? 40 ? 160 200 80 ? 120 40 120 160 v ds v gs ? 20 v v dd = ? 80 v 0 ? 8 ? 4 ? 12 ? 16 common source i d = ? 18 a tc = 25c pulse test ? 40 v ? 80 300 ? 0.1 ? 100 ? 10 ? 0.3 ? 3 1000 ? 1 ? 30 3000 30000 500 common source v gs = 0 v f = 1 mhz tc = 25c 100 5000 10000 c rss c oss c iss ? 0.3 02.0 1.6 0.4 1.2 ? 100 0.8 2.4 ? 1 ? 3 ? 10 ? 0.5 ? 5 common source tc = 25c pulse test ? 30 ? 50 v gs = 0, 1 v ? 5 ? 10 ? 1 ? 3 0.20 0 ? 80 160 80 ? 40 40 0.05 0.15 0 120 0.10 common source pulse test v gs = ? 4 v v gs = ? 10 v i d = ? 18 a ? 4.5 ? 9 ? 4.5 free datasheet http://
2sJ464 2009-09-29 5 r th ? t w pulse width t w (s) normalized transient thermal impedance r th (t) /r th (ch-c) avalanche energy e as (mj) drain-source voltage v ds (v) safe operating area drain current i d (a) channel temperature (initial) t ch (c) e as ? t ch test circuit wave form i ar b vdss v dd v ds r g = 25 v dd = ?50 v, l = 3.56 mh ? ? ? ? ? ? ? ? ? = vb b li 2 1 dd vdss vdss 2 as ?15 v 15 v 0 25 400 1000 150 75 200 600 800 50 100 125 0.003 100 m 10 m 0.01 1 1 10 0.005 0.3 0.03 0.5 0.05 0.1 10 100 1 m duty = 0.5 0.02 0.2 0.1 0.05 single pulse 0.01 t p dm t duty = t/t r th (ch-c) = 2.78c/w ? 0.1 ? 1 ? 3 ? 10 ? 30 ? 100 ? 300 ? 0.3 ? 0.5 ? 1 ? 3 ? 5 ? 10 ? 30 ? 50 ? 100 ? 300 ? 0.3 i d max (pulse) * * : single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. i d max (continuous) v dss max 100 s* dc operation tc = 25c 1 ms * 10 ms * free datasheet http://
2sJ464 2009-09-29 6 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before creating and producing des igns and using, customers mus t also refer to and comply with (a) the latest versions of all re levant toshiba information, including without limitation, this d ocument, the specifications, the data sheets and applic ation notes for product and the precautions and conditions set forth in the ?tosh iba semiconductor reliability handbook? and (b) t he instructions for the application that product will be used with or for. custome rs are solely responsible for all aspects of t heir own product design or applications, incl uding but not limited to (a) determining th e appropriateness of the use of this product in such design or applications; (b) evaluating and det ermining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety dev ices, elevators and escalato rs, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy product, whether in whole or in part. ? product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is pres ented only as guidance for product use. no re sponsibility is assumed by toshiba for an y infringement of patents or any other intellectual property rights of third parties that may result from the use of product. no license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ? a bsent a written signed agreement, except as provid ed in the relevant terms and conditions of sale fo r product, and to the maximum extent allowable by law, toshiba (1) assumes no liability whatsoever, including without limitation, indirect, co nsequential, special, or incidental damages or loss, including without limitation, loss of profit s, loss of opportunities, business interruption and loss of data, and (2) disclaims any and all express or implied warranties and conditions related to sale, use of product, or information, including warranties or conditions of merchantability, fitness for a particular purpose, accuracy of information, or noninfringement. ? do not use or otherwise make available product or related so ftware or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or m anufacturing of nuclear, chemical , or biological weapons or missi le technology products (mass destruction w eapons). product and related software and technology may be controlled under the japanese foreign exchange and foreign trade law and the u.s. expor t administration regulations. ex port and re-export of product or related software or technology are strictly prohibited exc ept in compliance with all applicable export laws and regulations. ? please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of pro duct. please use product in compliance with all applicable laws and regula tions that regulate the inclusion or use of controlled subs tances, including without limitation, the eu rohs directive. toshiba assumes no liability for damages or losses occurring as a result o f noncompliance with applicable laws and regulations. free datasheet http://


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RN73C1J464RBTDF
TE Connectivity Res Thin Film 0603 464 Ohm 0.1% 1/16W ±10ppm/°C Molded SMD SMD Paper T/R 1000: USD0.38095
BuyNow
2326

New Advantage Corporation

Part # Manufacturer Description Price BuyNow  Qty.
RN73C1J464KBTD
TE Connectivity RES SMD 464K OHM 0.1% 1/16W 0603 10: USD0.58
50: USD0.45
100: USD0.4
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430
SQJ464EP-T1_GE3
Vishay Siliconix 3000: USD0.4914
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3000

Win Source Electronics

Part # Manufacturer Description Price BuyNow  Qty.
SQJ464EP-T1_GE3
Vishay Huntington MOSFET N-CH 60V 32A PPAK SO-8 8: USD7.066
18: USD5.798
27: USD5.616
37: USD5.435
48: USD5.254
64: USD4.711
BuyNow
14900

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