BSS119 sipmos ? small-signal-transistor product summary v ds 100 v r ds(on) 6 ? i d 0.17 a feature ? n-channel ? enhancement mode ? logic level ? d v /d t rated sot23 1 2 3 vps05161 gate pin1 drain pin 3 source pin 2 marking ssh type package ordering code tape and reel information BSS119 sot23 q67000-s007 e6327: 3000 pcs/reel maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t a =25c t a =70c i d 0.17 0.13 a pulsed drain current t a =25c i d puls 0.68 reverse diode d v /d t i s =0.17a, v ds =80v, d i /d t =200a/s, t jmax =150c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t a =25c p tot 0.36 w operating and storage temperature t j , t stg -55... +150 c iec climatic category; din iec 68-1 55/150/56 product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - ambient at minimal footprint r thjs - - 350 k/w electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0, i d =250a v (br)dss 100 - - v gate threshold voltage, v gs = v ds i d =50a v gs(th) 1.3 1.8 2.3 zero gate voltage drain current v ds =100v, v gs =0, t j =25c v ds =100v, v gs =0, t j =150c i dss - - 0.05 0.5 0.1 5 a gate-source leakage current v gs =20v, v ds =0 i gss - 10 100 na drain-source on-state resistance v gs =4.5v, i d =0.13 a r ds(on) - 4.9 10 drain-source on-state resistance v gs =10v, i d =0.17a r ds(on) - 3.4 6 BSS119 product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 2* i d * r ds(on)max , i d =0.13a 0.08 0.17 - s input capacitance c iss v gs =0, v ds =25v, f =1mhz - 60 78 pf output capacitance c oss - 8.6 11.2 reverse transfer capacitance c rss - 3.1 4.1 turn-on delay time t d(on) v dd =50v, v gs =10v, i d =0.17a, r g =6 - 2.7 4 ns rise time t r - 3.1 4.6 turn-off delay time t d(off) - 9.3 14 fall time t f - 27 40 gate charge characteristics gate to source charge q gs v dd =80v, i d =0.17a - 0.08 0.12 nc gate to drain charge q gd - 0.76 1.1 gate charge total q g v dd =80v, i d =0.17a, v gs =0 to 10v - 1.67 2.5 gate plateau voltage v (plateau) v dd =80v, i d = 0.17 a - 3.4 - v reverse diode inverse diode continuous forward current i s t a =25c - - 0.17 a inv. diode direct current, pulsed i sm - - 0.68 inverse diode forward voltage v sd v gs =0, i f = i s - 0.8 1.2 v reverse recovery time t rr v r =50v, i f = l s , d i f /d t =100a/s - 21.7 32.5 ns reverse recovery charge q rr - 10 15 nc BSS119 product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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