AO7801 dual p-channel enhancement mode field effect transi stor features v ds (v) = -20v i d = -0.6a (v gs = -4.5v) r ds(on) < 520m w (v gs = -4.5v) r ds(on) < 700m w (v gs = -2.5v) r ds(on) < 950m w (v gs = -1.8v) general description the AO7801 uses advanced trench technology to provide excellent r ds(on) , low gate charge, and operation with gate voltages as low as 1.8v, in the small sot323 footprint. it can be used for a wide variety of applications, including load switching, low current inverters and low current dc-dc converters. it is esd protected to 2kv hbm. sc-70-6 (sot-323) top view d1 s1 g1 d2 s2 g2 d2 g1 s1 s2 g2 d1 12 3 65 4 symbol v ds v gs i dm t j , t stg symbol typ max 360 415 400 460 r q jl 300 350 units maximum junction-to-ambient a t 10s r q ja c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-lead c steady-state c/w thermal characteristics parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted vv 8 gate-source voltage drain-source voltage -20 -0.48 -3 pulsed drain current b power dissipation a t a =25c continuous drain current a maximum units parameter junction and storage temperature range a p d c 0.3 0.19 -55 to 150 t a =70c i d -0.6 alpha & omega semiconductor, ltd.
AO7801 symbol min typ max units bv dss -20 v -1 t j =55c -5 i gss 10 m a v gs(th) -0.5 -0.6 -0.9 v i d(on) -3 a 400 520 t j =125c 542 700 540 700 m w 700 950 m w g fs 1.7 s v sd -0.86 -1 v i s -0.4 a c iss 114 140 pf c oss 17 pf c rss 14 pf r g 12 17 w q g 1.44 1.8 nc q gs 0.14 nc q gd 0.35 nc t d(on) 6.5 ns output capacitance turn-on delaytime dynamic parameters gate drain charge on state drain current v gs =-4.5v, v ds =-5v maximum body-diode continuous current input capacitance gate resistance v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs =-4.5v, v ds =-10v, i d =-0.6a gate source charge r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m w v gs =-2.5v, i d =-0.5a i s =-0.5a,v gs =0v v ds =-5v, i d =-0.6a gate threshold voltage v ds =v gs i d =-250 m a v ds =-16v, v gs =0v v ds =0v, v gs =8v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a drain-source breakdown voltage i d =-250 m a, v gs =0v v gs =-1.8v, i d =-0.4a v gs =-4.5v, i d =-0.6a reverse transfer capacitance v gs =0v, v ds =-10v, f=1mhz alpha & omega semiconductor, ltd. t d(on) 6.5 ns t r 6.5 ns t d(off) 18.2 ns t f 5.5 ns t rr 10 13 ns q rr 3 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. turn-on delaytime turn-on rise time turn-off delaytime v gs =-4.5v, v ds =-10v, r l =16.7 w , r gen =3 w turn-off fall time body diode reverse recovery time body diode reverse recovery charge i f =-0.6a, di/dt=100a/ m s i f =-0.6a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any a given application depends on the user's specific board design. the current rating i s based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6,12, 14 are obtained using 80 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. rev2: may 2012 alpha & omega semiconductor, ltd.
AO7801 typical electrical and thermal characteristics 0 2 4 6 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics -3.5v v gs =-2.0v -3v -6v -10v -4.5v 0 1 2 3 4 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -i d (a) -v gs (volts) figure 2: transfer characteristics 300 400 500 600 700 800 900 0 1 2 3 4 r ds(on) (m w ww w ) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance v gs =-4.5v v gs =-1.8v i d =-0.5a i d =-0.4a 25 125 c v ds =-5v v gs =-1.8v v gs =-4.5v i d =-0.6a -4v v gs =-2.5v v gs =-2.5v -2.5v alpha & omega semiconductor, ltd. 300 0 1 2 3 4 -i d (a) figure 3: on-resistance vs. drain current and gate voltage 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 0.0 0.4 0.8 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature 300 400 500 600 700 800 900 0 2 4 6 8 10 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage i d =-0.6a 25 125 alpha & omega semiconductor, ltd.
AO7801 typical electrical and thermal characteristics 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 -v gs (volts) -q g (nc) figure 7: gate-charge characteristics 0 50 100 150 200 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss 0 2 4 6 8 10 12 14 0.001 0.01 0.1 1 10 100 1000 power (w) c oss c rss 0.00 0.01 0.10 1.00 10.00 0.1 1 10 100 -i d (amps) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150 c, t a =25 c v ds =-10v i d =-0.6a t j(max) =150 c 10 m s alpha & omega semiconductor, ltd. 0 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance 0.00 0.1 1 10 100 -v ds (volts) figure 9: maximum forward biased safe operating area (note e) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =415 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d t on p d alpha & omega semiconductor, ltd.
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