500a phase control thyristors hockey puk version st280c..c series 1 bulletin i25159 rev. c 02/00 www.irf.com features center amplifying gate metal case with ceramic insulator international standard case to-200ab (a-puk) typical applications dc motor controls controlled dc power supplies ac controllers i t(av) 500 a @ t hs 55 c i t(rms) 960 a @ t hs 25 c i tsm @ 50hz 7850 a @ 60hz 8220 a i 2 t@ 50hz 308 ka 2 s @ 60hz 281 ka 2 s v drm /v rrm 400 to 600 v t q typical 100 s t j - 40 to 125 c parameters st280c..c units major ratings and characteristics case style to-200ab (a-puk)
st280c..c series 2 www.irf.com bulletin i25159 rev. c 02/00 electrical specifications voltage ratings voltage v drm /v rrm , max. repetitive v rsm , maximum non- i drm /i rrm max. type number code peak and off-state voltage repetitive peak voltage @ t j = t j max vvma 04 400 500 06 600 700 i t(av) max. average on-state current 500 (185) a 180 conduction, half sine wave @ heatsink temperature 55 (85) c double side (single side) cooled i t(rms) max. rms on-state current 960 dc @ 25 c heatsink temperature double side cooled i tsm max. peak, one-cycle 7850 t = 10ms no voltage non-repetitive surge current 8220 a t = 8.3ms reapplied 6600 t = 10ms 100% v rrm 6900 t = 8.3ms reapplied sinusoidal half wave, i 2 t maximum i 2 t for fusing 308 t = 10ms no voltage initial t j = t j max. 281 t = 8.3ms reapplied 218 t = 10ms 100% v rrm 200 t = 8.3ms reapplied i 2 t maximum i 2 t for fusing 3080 ka 2 s t = 0.1 to 10ms, no voltage reapplied v t(to) 1 low level value of threshold voltage v t(to) 2 high level value of threshold voltage r t1 low level value of on-state slope resistance r t2 high level value of on-state slope resistance v tm max. on-state voltage 1.36 v i pk = 1050a, t j = 125 c, t p = 10ms sine pulse i h maximum holding current 600 i l max. (typical) latching current 1000 (300) 0.84 (16.7% x x i t(av) < i < x i t(av) ), t j = t j max. 0.50 (16.7% x x i t(av) < i < x i t(av) ), t j = t j max. 0.47 (i > x i t(av) ),t j = t j max. parameter st280c..c units conditions 0.88 (i > x i t(av) ),t j = t j max. on-state conduction ka 2 s v m ? ma t j = 25 c, anode supply 12v resistive load di/dt max. non-repetitive rate of rise gate drive 20v, 20 ? , t r 1s of turned-on current t j = t j max, anode voltage 80% v drm gate current 1a, di g /dt = 1a/s v d = 0.67% v drm , t j = 25 c i tm = 300a, t j = t j max, di/dt = 20a/s, v r = 50v dv/dt = 20v/s, gate 0v 100 ?, t p = 500s parameter st280c..c units conditions switching 1000 a/s t d typical delay time 1.0 t q typical turn-off time 100 s st280c..c 30
st280c..c series 3 www.irf.com bulletin i25159 rev. c 02 p gm maximum peak gate power 10.0 t j = t j max, t p 5ms p g(av) maximum average gate power 2.0 t j = t j max, f = 50hz, d% = 50 i gm max. peak positive gate current 3.0 a t j = t j max, t p 5ms +v gm maximum peak positive gate voltage -v gm maximum peak negative gate voltage t j = - 40 c ma t j = 25 c t j = 125 c t j = - 40 c vt j = 25 c t j = 125 c i gd dc gate current not to trigger 10 ma parameter st280c..c units conditions 20 5.0 triggering typ. max. 180 - 90 150 40 - 2.9 - 1.8 3.0 1.2 - v gd dc gate voltage not to trigger 0.30 v max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated v drm anode-to-cathode applied t j = t j max max. required gate trigger/ cur- rent/ voltage are the lowest value which will trigger all units 12v anode-to-cathode applied v gt dc gate voltage required to trigger i gt dc gate current required to trigger w vt j = t j max, t p 5ms t j max. operating temperature range -40 to 125 t stg max. storage temperature range -40 to 150 r thj-hs max. thermal resistance, 0.17 dc operation single side cooled junction to heatsink 0.08 dc operation double side cooled r thc-hs max. thermal resistance, 0.033 dc operation single side cooled case to heatsink 0.017 dc operation double side cooled f mounting force, 10% 4900 n (500) (kg) wt approximate weight 50 g parameter st280c..c units conditions k/w thermal and mechanical specification c case style to - 200ab (a-puk) see outline table k/w dv/dt maximum critical rate of rise of off-state voltage i drm max. peak reverse and off-state i rrm leakage current blocking 500 v/ st j = t j max. linear to 80% rated v drm parameter st280c..c units conditions 30 ma t j = t j max, rated v drm /v rrm applied
st280c..c series 4 www.irf.com bulletin i25159 rev. c 02/00 ordering information table ? r thj-hs conduction (the following table shows the increment of thermal resistence r thj-hs when devices operate at different conduction angles than dc) device code 5 1 2 3 4 st 28 0 c 06 c 1 7 6 8 single side double side single side double side 180 0.016 0.016 0.011 0.011 t j = t j max. 120 0.019 0.019 0.019 0.019 90 0.024 0.024 0.026 0.026 k/w 60 0.035 0.035 0.036 0.037 30 0.060 0.060 0.060 0.061 sinusoidal conduction rectangular conduction conduction angle units conditions 1 - thyristor 2 - essential part number 3 - 0 = converter grade 4 - c = ceramic puk 5 - voltage code: code x 100 = v rrm (see voltage rating table) 6 - c = puk case to-200ab (a-puk) 7 - 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = eyelet terminals (gate and auxiliary cathode soldered leads) 3 = fast-on terminals (gate and auxiliary cathode soldered leads) 8 - critical dv/dt: none = 500v/sec (standard selection) l = 1000v/sec (special selection)
st280c..c series 5 www.irf.com bulletin i25159 rev. c 02 outline table case style to-200ab (a-puk) all dimensions in millimeters (inches) fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics dia. max. 4.75 (0.19) 28 (1.10) 6.5 (0.26) 19 (0.75) 0.3 (0.01) min. 0.3 (0.01) min. 13.7 / 14.4 (0.54 / 0.57) 25 5 gate term. for 1.47 (0.06) dia. pin receptacle anode to gate creepage distance: 7.62 (0.30) min. strike distance: 7.12 (0.28) min. 19 (0.75) dia. max. 38 (1.50) dia max. 2 holes 3.56 (0.14) x 1.83 (0.07) min. deep 42 (1.65) max. average on-state current (a) maximum allowable heatsink temperature ( c) maximum allowable heatsink temperature ( c) average on-state current (a) 40 50 60 70 80 90 100 110 120 130 0 50 100 150 200 250 300 350 30 60 90 120 180 conduction an g le st280c..c series ( sin g le side cooled ) r ( dc ) = 0.17 k/w thj-hs 20 30 40 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 dc 30 60 90 120 180 conduction period st280c..c series ( sin g le side cooled ) r ( dc ) = 0.17 k/w thj-hs quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification)
st280c..c series 6 bulletin i25159 rev. c 02/00 www.irf.com fig. 7 - maximum non-repetitive surge current single and double side cooled fig. 8 - maximum non-repetitive surge current single and double side cooled fig. 3 - current ratings characteristics fig. 4 - current ratings characteristics fig. 5- on-state power loss characteristics fig. 6- on-state power loss characteristics average on-state current (a) maximum allowable heatsink temperature ( c) average on-state current (a) maximum allowable heatsink temperature ( c) average on-state current (a) maximum allowable heatsink temperature ( c) maximum allowable heatsink temperature ( c) average on-state current (a) number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) pulse train duration (s) peak half sine wave on-state current (a) 20 30 40 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 700 30 60 90 120 180 conduction an g le st280c..c series ( double side cooled ) r ( dc ) = 0.08 k/w thj-hs 20 30 40 50 60 70 80 90 100 110 120 130 0 200 400 600 800 1000 dc 30 60 90 120 180 conduction period st280c..c series ( double side cooled ) r ( dc ) = 0.08 k/w thj-hs 0 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 400 500 600 700 180 120 90 60 30 rms limit conduction an g le st280c..c series t = 125 c j 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 0 200 400 600 800 1000 dc 180 120 90 60 30 rms limit conduction period st280c..c series t = 125 c j 3000 3500 4000 4500 5000 5500 6000 6500 7000 1 10 100 initial t = 125 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j st280c..c series at an y rated load condition and with rated v applied followin g sur g e. rrm 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 0.01 0.1 1 versus pulse train duration. control st280c..c series maximum non repetitive sur g e current of conduction ma y not be maintained. initial t = 125 c no volta g e reapplied rated v reapplied rrm j
st280c..c series 7 bulletin i25159 rev. c 02/00 www.irf.com fig. 10 - thermal impedance z thj-hs characteristics fig. 9 - on-state voltage drop characteristics fig. 11 - gate characteristics instantaneous on-state voltage (v) instantaneous on-state current (a) square wave pulse duration (s) transient thermal impedance z (k/w) thj-hs instantaneous gate current (a) instantaneous gate voltage (v) 100 1000 10000 0.5 1 1.5 2 2.5 3 3.5 4 t = 25 c j t = 125 c j st280c..c series 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 st280c..c series stead y state value r = 0.17 k/w ( sin g le side cooled ) r = 0.08 k/w ( double side cooled ) ( dc operation ) thj-hs thj-hs 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vgd ig d ( b ) ( a ) tj=25 c tj=125 c tj=-40 c ( 1 ) ( 2 ) ( 3 ) a ) recommended load line for b ) recommended load line for <=30% rated di/dt : 10v, 10ohms fre q uenc y limited b y pg ( av ) rated di/dt : 20v, 10ohms; tr<=1 s tr<=1 s ( 1 ) pgm = 10w, tp = 4ms ( 2 ) pgm = 20w, tp = 2ms ( 3 ) pgm = 40w, tp = 1ms ( 4 ) pgm = 60w, tp = 0.66ms rectan g ular g ate pulse device: st280c..c series ( 4 )
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