2sC640 npn silicon epitaxial planar transistor for switching and af amplifier applications. the transistor is subdivided in to five groups r, o, y, p and l, according to its dc current gain. as complementary type the pnp transistor 2sa733 is recommended. on special request, these transistors can be manufactured in different pin configurations. 1. emitter 2. collector 3. base to-92 plastic package weight approx. 0.19g absolute maximum ratings (t a = 25 ) symbol parameter value unit collector base voltage v cbo 40 v collector emitter voltage v ceo 30 v emitter base voltage v ebo 5 v collector current i c 100 ma power dissipation p tot 150 mw junction temperature t j 150 o c storage temperature range -55 to +150 o c t s page 1 of 2 7/15/201 1 free datasheet http://www.ndatasheet.com
page 2 of 2 7/15/201 1 characteristics at t amb =25 o c parameter symbol min. typ. max. unit dc current gain at v =6v, i =1ma 1) ce c current gain group r o y p l h fe h fe h fe h fe h fe 40 70 120 200 350 - - - - - 80 140 240 400 700 - - - - - collector base breakdown voltage at i c =100 a v (br)cbo 40 - - v collector emitter breakdown voltage at i c =10ma v (br)ceo 30 - - v emitter base breakdown voltage at i e =10 a v (br)ebo 5 - - v collector cutoff current at v cb =40v i cbo - - 0.1 a emitter cutoff current at v eb =3v i ebo - - 0.1 a collector saturation voltage at i c =100ma, i b =10ma v ce(sat) - 0.15 0.3 v gain bandwidth product at v ce =6v, i c =10ma f t - 300 - mhz output capacitance at v cb =6v, f=1mhz c ob - 2.5 - pf noise figure at v ce =6v, i e =0.5ma at f=1khz, r s =500 ? nf - 4 - db free datasheet http://www.ndatasheet.com
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