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type BSS131 sipmos ? small-signal-transistor feature ? n-channel ? enhancement mode ? logic level ? d v /d t rated ? pb-free lead-plating; rohs compliant maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t a =25 c 0.11 a t a =70 c 0.09 pulsed drain current i d,pulse t a =25 c 0.4 reverse diode d v /d t d v /d t i d =0.1 a, v ds =192 v, d i /d t =200 a/s, t j,max =150 c 6 kv/s gate source voltage v gs 20 v esd sensitivity (hbm) as per mil-std 883 class 1a power dissipation p tot t a =25 c 0.36 w operating and storage temperature t j , t stg -55 ... 150 c iec climatic category; din iec 68-1 55/150/56 value v ds 240 v r ds(on),max 14 ? i d 0.1 a product summary pg-sot-23 type package pb-free tape and reel information marking BSS131 pg-sot23 yes l6327: 3000 pcs/reel srs rev. 2.1 page 1 2005-02-24
BSS131 parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - minimal footprint r thja - - 350 k/w electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =250 a 240 - - v gate threshold voltage v gs(th) v ds =0 v, i d =56 a 0.8 1.4 1.8 drain-source leakage current i d (off) v ds =240 v, v gs =0 v, t j =25 c - - 0.01 a v ds =240 v, v gs =0 v, t j =150 c --5 gate-source leakage current i gss v gs =20 v, v ds =0 v - - 10 na drain-source on-state resistance r ds(on) v gs =4.5 v, i d =0.09 a - 9.07 20 : v gs =10 v, i d =0.1 a - 7.7 14 transconductance g fs | v ds |>2| i d | r ds(on)max , i d =0.08 a 0.06 0.13 - s values rev. 2.1 page 2 2005-02-24
BSS131 parameter symbol conditions unit min. typ. max. d y namic characteristics input capacitance c iss -5877pf output capacitance c oss - 7.3 10 reverse transfer capacitance c rss - 2.8 4.2 turn-on delay time t d(on) - 3.3 5.0 ns rise time t r - 3.1 4.6 turn-off delay time t d(off) - 13.7 20 fall time t f - 64.5 97 gate charge characteristics gate to source charge q gs - 0.16 0.22 nc gate to drain charge q gd - 0.8 1.2 gate charge total q g - 2.1 3.1 gate plateau voltage v plateau - 2.90 - v reverse diode diode continous forward current i s - - 0.11 a diode pulse current i s,pulse - - 0.43 diode forward voltage v sd v gs =0 v, i f =0.1 a, t j =25 c - 0.81 1.2 v reverse recovery time t rr - 42.9 64.3 ns reverse recovery charge q rr - 22.6 34 nc v r =120 v, i f =0.1 a, d i f /d t =100 a/s t a =25 c values v gs =0 v, v ds =25 v, f =1 mhz v dd =120 v, v gs =10 v, i d =0.1 a, r g =6 : v dd =192 v, i d =0.1 a, v gs =0 to 10 v rev. 2.1 page 3 2005-02-24
BSS131 1 power dissipation 2 drain current p tot =f( t a ) i d =f( t a ); v gs v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 3 10 2 10 1 10 0 t p [s] z thja [k/w] 0 0.1 0.2 0.3 0.4 0 40 80 120 160 t a [c] p tot [w] 0 0.02 0.04 0.06 0.08 0.1 0.12 0 40 80 120 160 t a [c] i d [a] rev. 2.1 page 4 2005-02-24
BSS131 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c 2.3 v 2.7 v 3.3 v 3.9 v 4.5 v 5 v 7 v 10 v 5 7 9 11 13 15 17 19 21 23 25 0 0.1 0.2 0.3 0.4 i d [a] r ds(on) [ : ] 0 0.1 0.2 0.3 0.4 01234 v gs [v] i d [a] 0 0.05 0.1 0.15 0.2 0.25 0.3 0.0 0.1 0.2 0.3 0.4 i d [a] g fs [s] 2.3 v 2.7 v 3.3 v 3.9 v 4.5 v 5 v 7 v 10 v 0 0.1 0.2 0.3 0.4 01234567 v ds [v] i d [a] rev. 2.1 page 5 2005-02-24
BSS131 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =0.1 a; v gs =10 v v gs(th) =f( t j ); v ds =v gs ; i d =56 a parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz; t j =25c i f =f( v sd ) parameter: t j typ 98 % 0 10 20 30 40 50 -60 -20 20 60 100 140 t j [c] r ds(on) [ : ] typ 98 % 2 % 0 0.4 0.8 1.2 1.6 2 2.4 -60 -20 20 60 100 140 t j [c] v gs(th) [v] ciss coss crss 10 3 10 2 10 1 10 0 0102030 v ds [v] c [pf] 25 c 150 c 25 c, 98% 150 c, 98% 10 0 10 -1 10 -2 10 -3 0 0.4 0.8 1.2 1.6 2 2.4 2.8 v sd [v] i f [a] rev. 2.1 page 6 2005-02-24
BSS131 13 typ. gate charge 14 drain-source breakdown voltage v gs =f( q gate ); i d =0.1 a pulsed v br(dss) =f( t j ); i d =250 a parameter: v dd 200 210 220 230 240 250 260 270 280 290 300 -60 -20 20 60 100 140 t j [c] v br(dss) [v] 48 v 120v 192 v 0 2 4 6 8 10 12 0 0.5 1 1.5 2 2.5 q gate [nc] v gs [v] rev. 2.1 page 7 2005-02-24
BSS131 packa g e outline: footprint: packaging: rev. 2.1 page 8 2005-02-24
BSS131 published by infineon technologies ag bereich kommunikation st.-martin-stra?e 53 d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices, please contact your nearest infineon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact your nearest infineon technologies office. infineon technologies' components may only be used in life-support devices or systems with the expressed written approval of infineon technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 2.1 page 9 2005-02-24

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Price & Availability of BSS131

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSS131H6327XTSA1 86AK4533	Infineon Technologies AG	Mosfet, N-Ch, 240V, 0.11A, Sot-23 Rohs Compliant: Yes \|Infineon BSS131H6327XTSA1	30000: USD0.074 18000: USD0.075 12000: USD0.075 6000: USD0.084 3000: USD0.085	0
BSS131H6327XTSA1 87X8599	Infineon Technologies AG	Mosfet, N-Ch, 240V, 0.11A, 0.36W; Channel Type:N Channel; Drain Source Voltage Vds:240V; Continuous Drain Current Id:110Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V Rohs Compliant: Yes \|Infineon BSS131H6327XTSA1	1000: USD0.096 500: USD0.124 250: USD0.132 100: USD0.139 50: USD0.185 25: USD0.232 10: USD0.278 1: USD0.395	0
BSS131H6327XTSA1. 25AC6446	Infineon Technologies AG	Channel Type:N Channel; Drain Source Voltage Vds:240V; Continuous Drain Current Id:110Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V; Power Dissipation:360Mw; No. Of Pins:3Pinsrohs Compliant: Yes \|Infineon BSS131H6327XTSA1.	30000: USD0.074 18000: USD0.075 12000: USD0.075 6000: USD0.084 3000: USD0.085	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSS131H6327XTSA1 BSS131H6327XTSA1TR-ND	Infineon Technologies AG	MOSFET N-CH 240V 110MA SOT23-3	150000: USD0.05808 75000: USD0.0604 30000: USD0.07108 9000: USD0.07201 6000: USD0.08131 3000: USD0.08316	3860
BSS131H6327XTSA1 BSS131H6327XTSA1CT-ND	Infineon Technologies AG	MOSFET N-CH 240V 110MA SOT23-3	1000: USD0.09292 500: USD0.1194 100: USD0.1347 10: USD0.267 1: USD0.38	25
BSS131E6327 BSS131INTR-ND	Infineon Technologies AG	MOSFET N-CH 240V 110MA SOT23-3		0
BSS131H6327XTSA1 BSS131H6327XTSA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 240V 110MA SOT23-3	1000: USD0.09292 500: USD0.1194 100: USD0.1347 10: USD0.267 1: USD0.38	0
BSS131L6327HTSA1 BSS131L6327HTSA1TR-ND	Infineon Technologies AG	MOSFET N-CH 240V 110MA SOT23-3	75000: USD0.07747 30000: USD0.09117 9000: USD0.09236 6000: USD0.10428 3000: USD0.10667	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSS131H6327XTSA1 BSS131H6327XTSA1	Infineon Technologies AG	Power MOSFET, N Channel, 240 V, 110 mA, 14 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: BSS131H6327XTSA1)		6000
BSS131H6327XTSA1 BSS131H6327XTSA1	Infineon Technologies AG	Power MOSFET, N Channel, 240 V, 110 mA, 14 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: BSS131H6327XTSA1)		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSS131H6327XTSA1 726-BSS131H6327XTSA	Infineon Technologies AG	MOSFETs N-Ch 240V 100mA SOT-23-3	1: USD0.38 10: USD0.262 100: USD0.119 1000: USD0.092 3000: USD0.076 9000: USD0.072 24000: USD0.067 45000: USD0.064 99000: USD0.061	123426
BSS131H6327XT 726-BSS131H6327XTSA1	Infineon Technologies AG	MOSFET N-Ch 240V 100mA SOT-23-3	1: USD0.38 10: USD0.284 100: USD0.177 1000: USD0.093 3000: USD0.083 9000: USD0.072 24000: USD0.067 45000: USD0.06 99000: USD0.058	17971
BSS131 H6327 726-BSS131H6327	Infineon Technologies AG	MOSFET N-Ch 240V 100mA SOT-23-3	1: USD0.38 10: USD0.284 100: USD0.177 1000: USD0.093 3000: USD0.083 9000: USD0.072 24000: USD0.067 45000: USD0.066	19204

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSS131H6327XTSA1 E02:0323_03615974	Infineon Technologies AG	Trans MOSFET N-CH 240V 0.11A Automotive AEC-Q101 3-Pin SOT-23 T/R	99000: USD0.0407 45000: USD0.0412 24000: USD0.0525 9000: USD0.053 3000: USD0.0615	663000
BSS131H6327XTSA1 V72:2272_06391607	Infineon Technologies AG	Trans MOSFET N-CH 240V 0.11A Automotive AEC-Q101 3-Pin SOT-23 T/R	6000: USD0.0581 3000: USD0.076 1000: USD0.0858 500: USD0.1115 250: USD0.1127 100: USD0.119 25: USD0.2452 10: USD0.2543 1: USD0.3588	7877

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSS131H6327XTSA1 82398358	Infineon Technologies AG	Trans MOSFET N-CH 240V 0.11A Automotive AEC-Q101 3-Pin SOT-23 T/R	3000: USD0.0738	663000
BSS131H6327XTSA1 75724241	Infineon Technologies AG	Trans MOSFET N-CH 240V 0.11A Automotive AEC-Q101 3-Pin SOT-23 T/R	9000: USD0.0829 2000: USD0.0984 1000: USD0.1045 500: USD0.1094 252: USD0.1245	34649
BSS131 H6327 69767610	Infineon Technologies AG	Trans MOSFET N-CH 240V 0.11A Automotive AEC-Q101 3-Pin SOT-23 T/R	25000: USD0.3291 10000: USD0.3366 5000: USD0.3451 2500: USD0.3546 1000: USD0.3654 500: USD0.3777 250: USD0.3919 200: USD0.4082	26600
BSS131H6327XTSA1 71851333	YangXing Technology	BSS131H6327XTSA1	12000: USD0.1318 9000: USD0.1481 6000: USD0.1558 3000: USD0.1668	21000
BSS131H6327XTSA1 76442835	Infineon Technologies AG	Trans MOSFET N-CH 240V 0.11A Automotive AEC-Q101 3-Pin SOT-23 T/R	6000: USD0.0581 3000: USD0.076 1000: USD0.0858 500: USD0.1115 250: USD0.1127 108: USD0.119	7877

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSS131H6327	Infineon Technologies AG		954: USD0.105 192: USD0.1575 30: USD0.2625 10: USD0.525	1030
BSS131H6327	Infineon Technologies AG			40
BSS131H6327XTSA1	Infineon Technologies AG			277
BSS131 L6327	Infineon Technologies AG			342

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSS131H6327	Infineon Technologies AG	SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.11A I(D), 240V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET (Also Known As: BSS131)	8317: USD0.0666 2253: USD0.0722 1: USD0.1665	9000
BSS131H6327	Infineon Technologies AG	SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.11A I(D), 240V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET	8317: USD0.0666 2253: USD0.0722 1: USD0.1665	9000
BSS131H6327	Infineon Technologies AG	SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.11A I(D), 240V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET	239: USD0.14 30: USD0.21 1: USD0.7	824
BSS131H6327	Infineon Technologies AG	SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.11A I(D), 240V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET (Also Known As: BSS131)	239: USD0.14 30: USD0.21 1: USD0.7	824
BSS131L6327	Infineon Technologies AG	SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.11A I(D), 240V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET (Also Known As: BSS131)	106: USD0.475 27: USD0.57 1: USD0.95	273

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSS131H6327XTSA1 BSS131H6327XTSA1	Infineon Technologies AG	Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23	15000: USD0.0556 6000: USD0.0589 3000: USD0.0622 1500: USD0.0665 500: USD0.0774 250: USD0.0873 100: USD0.1036 50: USD0.12 10: USD0.1702 1: USD0.2236	7927

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSS131H6327XTSA1	Infineon Technologies AG	Single N-Channel 240 V 14 Ohm 2.1 nC SIPMOS® Small Signal Mosfet - SOT-23		17849
BSS131 H6327	Infineon Technologies AG	MOSFET N-CH 240V 110mA SOT23		68000

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSS131H6327	Infineon Technologies AG	SIPMOS SMALL-SIGNAL-TRANSISTOR Small Signal Field-Effect Transistor, 0.11A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		6870
BSS131H6327XTSA1	Infineon Technologies AG	SIPMOS SMALL-SIGNAL-TRANSISTOR Small Signal Field-Effect Transistor, 0.11A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		158790
BSS131E6327	Siemens	SIPMOS SMALL-SIGNAL TRANSISTOR Small Signal Field-Effect Transistor, 0.11A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		802

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSS131H6327	Infineon Technologies AG	INSTOCK		15000
BSS131H6327	Infineon Technologies AG	INSTOCK		30000
BSS131H6327XTSA1	Infineon Technologies AG	INSTOCK		223000
BSS131 H6327	Infineon Technologies AG	INSTOCK		48000

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSS131H6327XTSA1 C1S322000269286	Infineon Technologies AG	MOSFET	9000: USD0.0663 2000: USD0.0787 1000: USD0.0836 500: USD0.0875 200: USD0.0996 100: USD0.107 50: USD0.239 25: USD0.24	34649

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSS131H6327XTSA1	Infineon Technologies AG	Single N-Channel 240 V 14 Ohm 2.1 nC SIPMOS� Small Signal Mosfet - SOT-23	3000: USD0.0783 849000: USD0.0731	849000

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSS131	MFG UPON REQUEST			718
BSS131	Infineon Technologies AG			30
BSS131H6327	MFG UPON REQUEST			560
BSS131H6327XTSA1	Infineon Technologies AG			47853
BSS131H6327XTSA1	MFG UPON REQUEST			2560

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSS131	Infineon Technologies AG	BSS131		0
BSS131H6327XTSA1	Infineon Technologies AG	BSS131H6327XTSA1		0
BSS131L6327HTSA1	Infineon Technologies AG	BSS131L6327HTSA1		0
BSS131 H6327	Infineon Technologies AG	BSS131 H6327		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSS131	Siemens	SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)	225: USD0.226 540: USD0.186 835: USD0.18 1150: USD0.174 1480: USD0.169 1990: USD0.151	345000
BSS131H6327XTSA1	Infineon Technologies AG	MOSFET N-CH 240V 0.11A SOT23	425: USD0.119 1025: USD0.098 1580: USD0.095 2175: USD0.092 2810: USD0.089 3750: USD0.08	327100
BSS131L6327HTSA1	Infineon Technologies AG	MOSFET N-CH 240V .11A SOT-23	225: USD0.226 540: USD0.186 835: USD0.18 1150: USD0.174 1480: USD0.169 1990: USD0.151	331790
BSS131 L6327	Infineon Technologies AG		225: USD0.226 540: USD0.186 835: USD0.18 1150: USD0.174 1480: USD0.169 1990: USD0.151	332800
BSS131 H6327	Infineon Technologies AG	MOSFET N-CH 240V 0.11A SOT23	425: USD0.119 1025: USD0.098 1580: USD0.095 2175: USD0.092 2810: USD0.089 3750: USD0.08	327000

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