? 2001 in?eon technologies corp. ?optoelectronics division ?san jose, ca www.in?eon.com/opto ?1-888-in?eon (1-888-463-4636) 2?08 april 12, 2001-15 features current transfer ratio MCT5210, >70% at i f =3.0 ma mct5211, >110% at i f =1.0 ma saturation ctr?ct5211, >100% at i f =1.6 ma high isolation voltage, 5300 v rms underwriters lab file #e52744 vde #0884 available with option 1 description the MCT5210/5211 are optocouplers with a high ef? ciency algaas led optically coupled to a npn pho- totransistor. the high performance led makes operation at low input currents practical. the coupler is housed in a double molded, six pin dip package. isolation test voltage is 5300 v rms . because these parts have guaranteed ctrs at one and three ma, they are ideally suitable for interfacing from cmos to ttl or lsttl to ttl. they are also ideal for telecommunications applications such as ring or off-hook detection. maximum ratings emitter peak reverse voltage .........................................6.0 v continuous forward current ............................ 40 ma power dissipation at 25 c.................................75 mw derate linearly from 25 c ......................... 1.0 mw/ c detector collector-emitter breakdown voltage....................30 v emitter-collector breakdown voltage...................7.0 v collector-base breakdown voltage.......................70 v power dissipation............................................200 mw derate linearly from 25 c ......................... 2.6 mw/ c package isolation test voltage.................................. 5300 v rms total package dissipation at 25? ambient (led + detector) ..............260 mw derate linearly from 25 c ......................... 3.5 mw/ c leakage path ................................................ 7.0 mm clearance path.............................................. 7.0 mm comparative tracking index per din iec 112/vde 0303, part 1 ...........................175 isolation resistance v io =500 v, t a =25 c ................................... 10 12 ? v io =500 v, t a =100 c ................................. 10 11 ? operating temperature .................... ?5 c to +100 c storage temperature........................ ?5 c to +150 c v de electrical characteristics ( t a =25 c) parameter symbol min. typ. max. unit condition emitter forward voltage v f 1.2 1.5 v i f =5.0 ma reverse voltage v r 6.0 v i r =10 a detector h fe 100 200 v ce =5.0 v i c =100 a bv ceo 30v i c =100 a bv eco 7.0 v i e =100 a bv cbo 70v i e =10 a i ceo 5.0 100 na v ce =10 v package (0?0 c) saturated current transfer ratio v ce =0.4 v MCT5210 mct5211 mct5211 ctr ce sat ctr ce sat ctr ce sat 60 100 75 120 200 150 % % % i f =3.0 ma i f =1.6 ma i f =1.0 ma current transfer ratio v ce =5.0 v MCT5210 mct5211 mct5211 ctr ctr ctr 70 150 110 150 300 225 % % % i f =3.0 ma i f =1.6 ma i f =1.0 ma collector-base current transfer ratio v ce =4.3 v MCT5210 mct5211 mct5211 ctr cb ctr cb ctr cb 0.2 0.3 0.25 0.4 0.6 0.5 % % % i f =3.0 ma i f =1.6 ma i f =1.0 ma saturation voltage MCT5210 v ce sat 0.25 0.4 v i f =3.0 ma i c =1.8 ma mct5211 v ce sat 0.25 0.4 v i f =1.6 ma i c =1.6 ma .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3 9 .300 .347 (7.62 8.81) 4 typ. dimensions in inches (mm) 1 2 3 6 5 4 base collector emitter anode cathode nc MCT5210 mct5211 algaas led/ phototransistor optocoupler
? 2001 in?eon technologies corp. ?optoelectronics division ?san jose, ca MCT5210/5211 www.in?eon.com/opto ?1-888-in?eon (1-888-463-4636) 2?09 april 12, 2001-15 characteristics ? continued parameter symbol min. typ. max. unit condition switching characteristics (25?) propagation delay high to low MCT5210 mct5211 mct5211 t phl t phl t phl 10 20 40 s s s r l =330 ? , i f =3.0 ma, v cc =5.0 v r l =750 ? , i f =1.6 ma, v cc =5.0 v r l =1.5 k ? , i f =1.0 ma, v cc =5.0 v propagation delay low to high MCT5210 mct5211 mct5211 t phl t phl t phl 10 20 40 s s s r l =330 ? , i f =3.0 ma, v cc =5.0 v r l =750 ? , i f =1.6 ma, v cc =5.0 v r l =1.5 k ? , i f =1.0 ma, v cc =5.0 v figure 1. forward current vs. forward voltage figure 2. led forward current vs. forward voltage figure 3. switching waveform 1.4 1.3 1.2 1.1 1.0 0 5 10 15 20 25 30 35 vf - led forward voltage - v if - led current - ma ta = 25 c forward voltage 1.4 1.3 1.2 1.1 1.0 .1 1 10 100 vf - led forward voltage - v if - led current - ma ta = 25 c i f t r =1.5 v v o t d t s t f t phl t plh v th figure 4. collector base photocurrent vs. led current figure 5. photocurrent vs. led current figure 6. switching schematic 40 35 30 25 20 15 10 5 0 0 50 100 150 200 250 300 if - led current - ma icb - photocurrent - a ta = 25 c scu 100 10 1 .1 .1 1 10 100 1000 if - led current - ma icb - photocurrent - a ta = 25 c input v out v cc = 5 v r l figure 7. collector base current transfer ratio vs. led current figure 8. collector base current transfer ratio vs. led current figure 9. current transfer ratio vs. led current 35 30 25 20 15 10 5 0 0.0 0.2 0.4 0.6 0.8 1.0 if - led current - ma ctrcb - collector base - ctr - % ta = 25 c 100 10 1 .1 0.0 0.2 0.4 0.6 0.8 1.0 if - led current - ma ctrcb - collector base - ctr - % ta = 25 c 100 10 1 .1 100 200 300 400 500 600 700 if - led current - ma ratio - % ta = 25 c vce 10 v 5 v 2 v 1v 0.4 v vs led current
? 2001 in?eon technologies corp. ?optoelectronics division ?san jose, ca MCT5210/5211 www.in?eon.com/opto ?1-888-in?eon (1-888-463-4636) 2?10 april 12, 2001-15 figure 10. collector current vs. led current figure 11. collector current vs. led current figure 12. transistor current gain vs. base current figure 13. transfer curve 25 20 15 10 5 0 0 10 20 30 40 50 60 70 80 if - led current - ma ice - collector current - ma vce 10 v 5 v 2 v 1 v 0.4 v ta = 25 c 100 10 1 .1 .1 1 10 100 if - led current - ma ice - collector current - ma vce 10 v 5 v 2 v 1 v 0.4 v ta = 25 c 1000 100 10 1 .1 100 200 300 400 500 600 700 800 ib - base current - a hfe - dc current gain - (ice/ib) vce 10 v 5 v 2 v 1 v 0.4 v ta = 25 c 1000 100 10 1 .1 .1 1 10 100 500 600 700 800 icb - photocurrent - a if - led current - ma hfe - transistor gain vce =10v, ta =25 c ice = icb x hfe figure 14. transfer curve figure 15. propagation delay vs. base emitter resistor figure 16. propagation delay vs. base emitter resistor figure 17. propagation delay vs. base emitter resistor 1000 100 10 1 .1 .1 1 10 100 100 200 300 400 500 600 700 icb - photocurrent - a if - led current - ma hfe - transistor gain vce = 0.4v, ta = 25 c ice = icb x hfe 10 7 10 6 10 5 10 20 30 40 50 60 70 rbe - base emitter resistor - propagation delay - s if = 1ma ta = 25 c rl= 10k vth = 1.5v tphl tplh vce = 5v 10 7 10 6 10 5 0 10 20 30 40 50 rbe - base emitter resistor - propagation delay - s if = 1.6ma ta = 25 c rl= 4.7k vth = 1.5v tphl tplh vce = 5v 10 7 10 6 10 5 10 4 0 5 10 15 20 25 30 35 40 rbe - base emitter resistor - propagation delay - s if = 3ma ta = 25 c rl= 3k vth = 1.5v tphl tplh vce = 5v
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