? semiconductor components industries, llc, 2012 june, 2012 ? rev. 3 1 publication order number: NTR4003N/d NTR4003N, nvr4003n small signal mosfet 30 v, 0.56 a, single n ? channel, sot ? 23 features ? low gate voltage threshold (v gs(th) ) to facilitate drive circuit design ? low gate charge for fast switching ? esd protected gate ? sot ? 23 package provides excellent thermal performance ? minimum breakdown voltage rating of 30 v ? nvr prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free and are rohs compliant applications ? notebooks: ? level shifters ? logic switches ? low side load switches ? portable applications maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain ? to ? source voltage v dss 30 v gate ? to ? source voltage v gs 20 v continuous drain current (note 1) steady state t a = 25 c i d 0.5 a t a = 85 c 0.37 power dissipation (note 1) steady state p d 0.69 w continuous drain current (note 1) t < 10 s t a = 25 c i d 0.56 a t a = 85 c 0.40 power dissipation (note 1) t < 5 s p d 0.83 w pulsed drain current t p = 10 s i dm 1.7 a operating junction and storage temperature t j , tstg ? 55 to 150 c source current (body diode) i s 1.0 a lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal resistance ratings parameter symbol max unit junction ? to ? ambient ? steady state (note 1) r ja 180 c/w junction ? to ? ambient ? t < 10 s (note 1) r ja 150 junction ? to ? ambient ? steady state (note 2) r ja 300 1. surface ? mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). 2. surface ? mounted on fr4 board using the minimum recommended pad size. 1 3 2 device package shipping ? ordering information http://onsemi.com 30 v 1.5 @ 2.5 v 1.0 @ 4.0 v r ds(on) typ 0.56 a i d max v (br)dss sot ? 23 case 318 style 21 marking diagram/ pin assignment 2 tr8 = specific device code m = date code = pb ? free package 3 1 3 drain 1 gate 2 source n ? channel NTR4003Nt1g sot ? 23 (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. tr8 m (note: microdot may be in either location) *date code orientation and overbar may vary depending upon manufacturing location. NTR4003Nt3g sot ? 23 (pb ? free) 10,000 / tape & reel nvr4003nt3g sot ? 23 (pb ? free) 10,000 / tape & reel
NTR4003N, nvr4003n http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max units off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 100 a 30 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j 40 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 30 v t j = 25 c 1.0 a gate ? to ? source leakage current i gss v ds = 0 v, v gs = 10 v 1.0 a on characteristics (note 3) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 0.8 1.4 v negative threshold temperature coefficient v gs(th) /t j 3.4 mv/ c drain ? to ? source on resistance r ds(on) v gs = 4.0 v, i d = 10 ma 1.0 1.5 v gs = 2.5 v, i d = 10 ma 1.5 2.0 forward transconductance g fs v ds = 3.0 v, i d = 10 ma 0.33 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 5.0 v 21 pf output capacitance c oss 19.7 reverse transfer capacitance c rss 8.1 total gate charge q g(tot) v gs = 5.0 v, v ds = 24 v, i d = 0.1 a 1.15 nc threshold gate charge q g(th) 0.15 gate ? to ? source gate charge q gs 0.32 gate ? to ? drain charge q gd 0.23 switching characteristics (note 4) turn ? on delay time t d(on) v gs = 4.5 v, v dd = 5.0 v, i d = 0.1 a, r g = 50 16.7 ns rise time t r 47.9 turn ? off delay time t d(off) 65.1 fall time t f 64.2 source ? drain diode characteristics forward diode voltage v sd v gs = 0 v, i s = 10 ma t j = 25 c 0.65 0.7 v t j = 125 c 0.45 reverse recovery time t rr v gs = 0 v, di s /dt = 8a/ s, i s = 10 ma 14 ns 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures.
NTR4003N, nvr4003n http://onsemi.com 3 typical performance curves (t j = 25 c unless otherwise noted) 0 v ds , drain ? to ? source voltage (v) i d, drain current (a) 0 figure 1. on ? region characteristics 14 1.6 0.8 2 0 0 figure 2. transfer characteristics v gs , gate ? to ? source voltage (v) figure 3. on ? resistance vs. gate ? to ? source voltage i d, drain current (amps) i d, drain current (a) ? 50 0 ? 25 25 1.40 1.20 1.00 0.80 50 125 100 figure 4. on ? resistance vs. drain current and temperature t j , junction temperature ( c) 1 75 150 1 0 figure 5. on ? resistance variation with temperature 2 2.5 v 0.4 0.8 1.2 1.2 3 1.80 1.60 03 0 v ds, drain ? to ? source voltage (volts) 1000 10 100 10 15 t j = 150 c t j = 125 c 5 v gs = 0 v 0.60 20 25 1.6 3.5 v 4 v 4.5 v 0.4 t j = 125 c t j = ? 55 c t j = 25 c figure 6. drain ? to ? source leakage current vs. voltage 2 0 6 4 10 8 2.4 2.8 3.2 3.6 4 r ds(on), drain ? to ? source resistance ( ) v gs , gate ? to ? source voltage (v) v gs = 10 v to 5 v i d = 0.2 a 0.8 0.6 0.4 0.2 0 0.1 0.2 0.3 0.4 0.5 0.6 v gs = 10 v t j = 125 c t j = ? 55 c t j = 25 c i d = 0.3 a v gs = 4.5 v r ds(on), drain ? to ? source resistance ( ) 5 r ds(on), drain ? to ? source resistance ( ) (normalized) i dss , leakage (na) v ds 10 v
NTR4003N, nvr4003n http://onsemi.com 4 typical performance curves (t j = 25 c unless otherwise noted) 08 30 20 10 0 20 drain ? to ? source voltage (v) c, capacitance (pf) 0 4 1 0 q g , total gate charge (nc) v gs, gate ? to ? source voltage (v) c oss t j = 25 c i d = 0.1 a 50 2 3 40 5 12 0.4 1. 2 0.001 v sd , source ? to ? drain voltage (v) i s , source current (a) 0.8 1 figure 7. capacitance variation figure 8. gate ? to ? source & drain ? to ? source voltage vs. total charge figure 9. diode forward voltage vs. current 4 0.8 0.4 0.6 16 c rss c iss t j = 25 c v gs = 0 v 0.1 0.01 t j = 150 c t j = 25 c v gs = 0 v
NTR4003N, nvr4003n http://onsemi.com 5 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 style 21: pin 1. gate 2. source 3. drain *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 NTR4003N/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
