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cystech electronics corp. spec. no. : c934q8 issued date : 2013.10.01 revised date : 2013.10.03 page no. : 1/12 MTBA5Q10Q8 cystek product specification 2n- and 2p-channel logic level enhancement mode mosfet MTBA5Q10Q8 n-ch p-ch bv dss 100v -100v i d 2.5a -1.7a r dson(max.) 185m 300m description the MTBA5Q10Q8 consists of two n-channel and two p-channel enha ncement-mode mosfet in a single sop-8 package, providing the designer with the best combination of fast sw itching, ruggedized device design, low on-resistance and cost-effectiveness. the sop-8 package is universally preferred for all commercial-industrial surface mount applications. features ? simple drive requirement ? low on-resistance ? fast switching speed ? pb-free lead plating and halogen-free package equivalent circuit outline sop-8 MTBA5Q10Q8 g gate s source d drain ordering information device package shipping MTBA5Q10Q8-0-t3-g sop-8 (pb-free lead plating and halogen-free package) 2500 pcs / tape & reel environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pc s / tape & reel, 13? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c934q8 issued date : 2013.10.01 revised date : 2013.10.03 page no. : 2/12 MTBA5Q10Q8 cystek product specification absolute maximum ratings (t c =25 c, unless otherwise noted) limits parameter symbol n-channel p-channel unit drain-source breakdown voltage bv dss 100 -100 gate-source voltage v gs 20 20 v t a =25 c, v gs =10v (-10v) 2.5 -1.7 continuous drain current (note 2) t a =70 c, v gs =10v (-10v) i d 2.1 -1.4 pulsed drain current (note 1) i dm 10 -6.8 a t a =25 c 1.66 power dissipation t a =100 c p d 0.83 w operating junction and storage temperature range tj; tstg -55~+175 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 36 c/w thermal resistance, junction-to-ambient, max r th,j-a 90 (note 2) c/w note : 1.pulse width limited by maximum juncti on temperature. 2.surface mounted on 1 in2 copper pad of fr-4 board, pulse width 10s. n-channel electrical characteristics (tc=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 100 - - v v gs =0, i d =250 a v gs(th) 1.0 1.4 2.5 v v ds =v gs , i d =250 a i gss - - 100 na v gs =20v, v ds =0 - - 1 a v ds =80v, v gs =0 i dss - - 25 a v ds =70v, v gs =0, tj=125 c - 151 185 i d =2.5a, v gs =10v *r ds(on) - 155 190 m i d =2a, v gs =4.5v *g fs - 8 - s v ds =5v, i d =2.5a dynamic ciss - 1237 - coss - 38 - crss - 27 - pf v ds =20v, v gs =0, f=1mhz *td (on) - 13 - *tr - 9 - *td (off) - 36 - *tf - 9 - ns v ds =50v, i d =1a, v gs =10v, r g =6 *qg - 18 - *qgs - 4.2 - *qgd - 3.6 - nc v ds =80v, i d =2.5a, v gs =10v body diode *v sd - 0.9 1.2 v v gs= 0v, i s =2.5a *i s - - 2.5 *i sm - - 10 a *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c934q8 issued date : 2013.10.01 revised date : 2013.10.03 page no. : 3/12 MTBA5Q10Q8 cystek product specification p-channel electrical characteristics (tc=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -100 - - v gs =0, i d =-250 a v gs(th) -1.0 -1.4 -2.5 v v ds =vgs, i d =-250 a i gss - - 100 na v gs =20v, v ds =0 - - -1 v ds =-80v, v gs =0 i dss - - -25 a v ds =-70v, v gs =0, tj=125 c - 246 300 i d =-1.7a, v gs =-10v *r ds(on) - 260 315 m i d =-1a, v gs =-4.5v *g fs - 5 - s v ds =-5v, i d =-1.7a dynamic ciss - 1406 - coss - 56 - crss - 33 - pf v ds =-20v, v gs =0, f=1mhz *td (on) - 14 - *tr - 10 - *td (off) - 37 - *tf - 10 - ns v ds =-50v, i d =-1a, v gs =-10v, r g =6 *qg - 19 - *qgs - 3.7 - *qgd - 4.8 - nc v ds =-80v, i d =-1.7a, v gs =-10v body diode *v sd - -0.9 -1.2 v v gs =0v, i s =-1.7a *i s - - -1.7 *i sm - - -6.8 a *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c934q8 issued date : 2013.10.01 revised date : 2013.10.03 page no. : 4/12 MTBA5Q10Q8 cystek product specification typical characteristics : q1( n-channel ) typical output characteristics 0 1 2 3 4 5 6 7 8 9 10 01234 5 brekdown voltage vs ambient temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v 10v, 9v, 8v, 7v, 6v, 5v, 4v v ds , drain-source voltage(v) i d , drain current (a) v gs =3v static drain-source on-state resistance vs drain current 100 1000 10000 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =3v v gs =2.5v v gs =4.5v v gs =10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 i dr , reverse drain current(a) v sd , source-drain voltage(v) static drain-source on-state resistance vs gate-source voltage 100 150 200 250 300 350 400 024681 0 0 tj=25c tj=150c v gs =0v drain-source on-state resistance vs junction tempearture 0.4 0.8 1.2 1.6 2 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =2.5a r dson @tj=25c : 151m typ. v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =2.5a
cystech electronics corp. spec. no. : c934q8 issued date : 2013.10.01 revised date : 2013.10.03 page no. : 5/12 MTBA5Q10Q8 cystek product specification typical characteristics(cont.) : q1( n-channel) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) v ds =5v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 0 5 10 15 20 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =2.5a v ds =50v v ds =80v maximum safe operating area 0.001 0.01 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) t a =25c, tj=175c v gs =10v, ja =90c/w single pulse dc 100ms r dson limite 100 s 10ms 1ms 1s maximum drain current vs junction temperature 0 0.5 1 1.5 2 2.5 3 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c v gs =10v r ja =90c/w
cystech electronics corp. spec. no. : c934q8 issued date : 2013.10.01 revised date : 2013.10.03 page no. : 6/12 MTBA5Q10Q8 cystek product specification typical characteristics(cont.) : q1( n-channel) single pulse power rating, junction to ambient (note on page 2) 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 pulse width(s) power (w) t j(max) =175c t a =25c ja =90c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t1/t2 3.t jm -t a =p dm *r ja (t) 4.r ja =90c/w
cystech electronics corp. spec. no. : c934q8 issued date : 2013.10.01 revised date : 2013.10.03 page no. : 7/12 MTBA5Q10Q8 cystek product specification typical characteristics : q2( p-channel) typical output characteristics 0 2 4 6 8 10 01234 5 brekdown voltage vs ambient temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage -i d =250 a, v gs =0v -v ds , drain-source voltage(v) -i d , drain current (a) 10v 9v 8v 7v 6v 5v 4v -v gs =3v static drain-source on-state resistance vs drain current 100 1000 10000 0.01 0.1 1 10 100 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) -v gs =3v -v gs =2.5v -v gs =4.5v -v gs =10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 02468 -i dr , reverse drain current(a) -v sd , source-drain voltage(v) 10 tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 200 250 300 350 400 450 500 550 600 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance -v gs =10v, -i d =1.7a r dson @tj=25c : 246m typ. -v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) -i d =1.7a
cystech electronics corp. spec. no. : c934q8 issued date : 2013.10.01 revised date : 2013.10.03 page no. : 8/12 MTBA5Q10Q8 cystek product specification typical characteristics(cont.) : q2(p-channel) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -v gs(th) , normalized threshold voltage -i d =250 a forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -i d , drain current(a) g fs , forward transfer admittance(s) -v ds =5v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 0 4 8 12162024 qg, total gate charge(nc) -v gs , gate-source voltage(v) i d =-1.7a v ds =-50v v ds =-80v maximum safe operating area 0.001 0.01 0.1 1 10 0.1 1 10 100 1000 -v ds , drain-source voltage(v) -i d , drain current(a) t a =25c, tj=175c v gs =-10v, ja =90c/w single pulse dc r dson limite 100 s 1ms 10ms 100ms 1s maximum drain current vs junction temperature 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c v gs =-10v r ja =90c/w
cystech electronics corp. spec. no. : c934q8 issued date : 2013.10.01 revised date : 2013.10.03 page no. : 9/12 MTBA5Q10Q8 cystek product specification typical characteristics(cont.) : q2(p-channel) single pulse power rating, junction to ambient (note on page 2) 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 pulse width(s) power (w) t j(max) =175c t a =25c ja =90c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t1/t2 3.t jm -t a =p dm *r ja (t) 4.r ja =90c/w
cystech electronics corp. spec. no. : c934q8 issued date : 2013.10.01 revised date : 2013.10.03 page no. : 10/12 MTBA5Q10Q8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c934q8 issued date : 2013.10.01 revised date : 2013.10.03 page no. : 11/12 MTBA5Q10Q8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c934q8 issued date : 2013.10.01 revised date : 2013.10.03 page no. : 12/12 MTBA5Q10Q8 cystek product specification sop-8 dimension marking: 8-lead sop-8 plastic package cystek packa g e code: q8 top view a b front view f c d e g part a i h j k o m l n right side view part a date code device name ba5q10 *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1909 0.2007 4.85 5.10 i 0.0019 0.0078 0.05 0.20 b 0.1515 0.1555 3.85 3.95 j 0.0118 0.0275 0.30 0.70 c 0.2283 0.2441 5.80 6.20 k 0.0074 0.0098 0.19 0.25 d 0.0480 0.0519 1.22 1.32 l 0.0145 0.0204 0.37 0.52 e 0.0145 0.0185 0.37 0.47 m 0.0118 0.0197 0.30 0.50 f 0.1472 0.1527 3.74 3.88 n 0.0031 0.0051 0.08 0.13 g 0.0570 0.0649 1.45 1.65 o 0.0000 0.0059 0.00 0.15 h 0.1889 0.2007 4.80 5.10 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .

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