ntgd4169f power mosfet and schottky diode 30 v, 2.9 a, n ? channel with schottky barrier diode, tsop ? 6 features ? fast switching ? low gate change ? low r ds(on) ? low v f schottky diode ? independently connected devices to provide design flexibility ? this is a pb ? free device applications ? dc ? dc converters ? portable devices like pda?s, cellular phones, and hard drives maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain ? to ? source voltage v dss 30 v gate ? to ? source voltage v gs 12 v n ? channel continuous drain current (note 1) steady state t a = 25 c t a = 85 c i d 2.6 1.9 a t 5 s t a = 25 c 2.9 power dissipation (note 1) steady state t a = 25 c p d 0.9 w t 5 s 1.1 pulsed drain current t p = 10 s i dm 8.6 a operating junction and storage temperature t j , t stg ? 25 to 150 c source current (body diode) i s 0.9 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c schottky maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit peak repetitive reverse voltage v rrm 30 v dc blocking voltage v r 30 v average rectified forward current i f 1 a thermal resistance ratings parameter symbol value unit junction ? to ? ambient ? steady state (note 1) r ja 140 c/w junction ? to ? ambient ? t 5 s (note 1) r ja 110 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). n ? channel mosfet schottky diode 30 v 30 v 125 m @ 2.5 v 90 m @ 4.5 v 1.0 a r ds(on) max 0.53 v i d max v (br)dss n ? channel mosfet schottky diode v r max i f max v f max 2.6 a 2.2 a k a td = specific device code m = date code = pb ? free package (note: microdot may be in either location) tsop ? 6 case 318g style 15 marking diagram td m 1 1 1 2 3 6 5 4 a s g k n/c d (top view) pin connection see detailed ordering and shipping information in the package dimensions sect ion on page 3 of this data sheet. ordering information g s d 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 3 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
mosfet electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j 21.4 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 24 v t j = 25 c 1.0 a t j = 85 c 10 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 12 v 100 na on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 0.5 0.9 1.5 v gate threshold temperature coefficient v gs(th) /t j ? 3.4 mv/ c drain ? to ? source on resistance r ds(on) v gs = 4.5 v i d = 2.6 a 52 90 m v gs = 2.5 v i d = 2.2 a 67 125 forward transconductance g fs v ds = 15 v, i d = 2.6 a 2.6 s charges, capacitances and gate resistance input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 15 v 295 pf output capacitance c oss 48 reverse transfer capacitance c rss 27 total gate charge q g(tot) v gs = 4.5 v, v ds = 15 v, i d = 2.0 a 3.7 5.5 nc threshold gate charge q g(th) 0.6 gate ? to ? source charge q gs 0.9 gate ? to ? drain charge q gd 0.8 switching characteristics (note 3) turn ? on delay time t d(on) v gs = 4.5 v, v ds = 15 v, i d = 1.0 a, r g = 6.0 7.0 ns rise time t r 4.0 turn ? off delay time t d(off) 14 fall time t f 2.0 drain ? to ? source characteristics forward diode voltage v sd v gs = 0 v is = 0.9 a t j = 25 c 0.7 1.2 v ns reverse recovery time t rr v gs = 0 v, d is /d t = 100 a/ s, is = 0.9 a 8.0 charge time t a 5.0 discharge time t b 3.0 reverse recovery time q rr 3.0 nc 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures. 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 3 ntgd4169f smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
schottky diode electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min typ max unit maximum instantaneous forward voltage v f i f = 0.5 a 0.41 0.45 v i f = 1.0 a 0.46 0.53 maximum instantaneous reverse current i r v r = 30 v 7.3 20 a v r = 20 v 2.5 8.0 schottky diode electrical characteristics (t j = 85 c unless otherwise noted) parameter symbol test conditions min typ max unit maximum instantaneous forward voltage v f i f = 0.5 a 0.35 v i f = 1.0 a 0.41 maximum instantaneous reverse current i r v r = 30 v 0.4 ma v r = 20 v 0.17 schottky diode electrical characteristics (t j = 125 c unless otherwise noted) parameter symbol test conditions min typ max unit maximum instantaneous forward voltage v f i f = 0.5 a 0.31 v i f = 1.0 a 0.39 maximum instantaneous reverse current i r v r = 30 v 4.4 ma v r = 20 v 1.6 schottky diode electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min typ max unit capacitance c v r = 10 v, f = 1.0 mhz 28 pf ordering information device package shipping ? NTGD4169FT1G tsop ? 6 (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 3 of 3 ntgd4169f smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
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