unisonic technologies co., ltd u f5n15 z p ower mosfet www.unisonic.com.tw 1 of 3 copyright ? 20 1 3 unisonic technologies co., ltd qw - r502 - 861. b 5a , 15 0v n - channel power mosfet ? description the utc uf5n15 z is an n - channel mo de p ower mos fet us ing utc?s advanced technology to provide c u st o mers with a minimum on- state resistance , low gate charge and superior switching performance. ? features * r ds(on ) < 1.9 @ v gs =10v , i d = 5 a * high s witching speed * low gate charge ? symbol 1.gate 2.drain 3.source to-252 1 ? ordering information order ing number package pin assign ment packing lead free halogen free 1 2 3 uf5n15 z l - tn3 - t uf5n15 z g - t n3 - t to - 252 g d s t ube uf5n15 z l - tn3 - r uf5n15 z g - tn3 - r to - 252 g d s tape reel note : pin assignment: g: gate d: drain s: source UF5N15Zl-tn3-r (1)packing type (2)package type (3)lead free (1) r: tape reel, t: tube (2) tn3: to-252 (3) l: lead free, g: halogen free
u f5n15z p ower mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw - r502 - 861. b ? absolute maximum ratings parameter symbol ratings unit drain - source voltage v dss 15 0 v gate - source voltage v gss 2 0 v drain current continuous i d 5 a pulsed i dm 20 a avalanche current i ar 5 a avalanche energy single pulsed e as 19 mj power dissipation p d 54 w junction temperature t j +150 c storage temperature range t stg - 55~+150 c note s: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. l=1.5mh, i as =5a, v dd =25v, r g =25 ? , starting t j =25 c. ? thermal characteristics parameter symbol ratings unit junction to ambient ja 110 c /w junction to case jc 2.13 c /w ? electrical character istics parameter symbol test conditions min typ max unit off characteristics drain - source breakdown voltage bv dss i d = 250 a, v gs =0v 150 v drain - source leakage current i dss v ds = 150 v, v gs =0v 1 a gate - source leakage current forward i gss v gs = + 2 0v, v ds =0v 1 0 a reverse v gs = - 2 0v, v ds =0v - 1 0 a on characteristics gate threshold voltage v gs (th) v ds =v gs , i d = 250a 2 4 v static drain - source on - state resistance r ds( on ) v gs =10v, i d = 5 a 0.1 1.9 ? dynamic parameters input capacitance c iss v ds = 2 5 v, v gs = 0v , f=1mhz 718 955 pf output capacitance c oss 77 105 pf reverse transfer capacitance c rss 3.3 5 pf swit ching parameters total gate charge q g v gs =10v, v d s = 75 v, i d = 4.5 a 10.6 15 nc gate to source charge q gs 3.5 nc gate to drain charge q gd 2.3 nc turn - o n delay time t d(on) v dd = 3 0v, i d = 1 a, r g =25? , v gs =10v 9.2 19 ns rise time t r 1.6 10 ns turn -o ff delay time t d(off) 14 24 ns fall - time t f 2.9 10 ns source - drain diode ratings and characteristics maximum body - diode continuous current i s 5 a maximum body - diode pulsed current i sm 20 a drain - source diode forward voltage v sd i s = 5 a, v gs =0v 1.4 3 v
u f5n15z p ower mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw - r502 - 861. b ? typical characteristics drain current vs. drain-source breakdown voltage drain current , i d (a) drain-source breakdown voltage , bv dss (v) 0.7 0 drain current vs. gate threshold voltage drain current , i d (a) gate threshold voltage, v th (v) 2.1 2.8 4.2 1.4 3.5 0 50 100 150 200 250 300 0 40 120 160 200 80 0 50 100 150 200 250 300 drain -source on-state resistance characteristics drain current , i d (a) drain to source voltage , v ds (v) 0 2 0 1 2 3 1 3 5 0 drain current vs . source to drain voltage source to drain voltage, v sd (v) drain current , i d (a) 0.2 0.4 0.6 0.8 1.2 0 1 2 4 6 4 3 1.0 5 6 v gs =10v, i d =5a 4 5 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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