tsm4435b 30v p-channel mosfet 1/6 version: a11 sop - 8 product summary v ds (v) r ds(on) (m ) i d (a) -30 21 @ v gs = -10v -9.1 35 @ v gs = -4.5v -6.9 features advance trench process technology high density cell design for ultra low on-resistan ce block diagram p-channel mosfet application dc-dc conversion battery switch ordering information part no. package packing tsm4435bcs rl sop-8 2.5kpcs / 13 reel tsm4435bcs rlg sop-8 2.5kpcs / 13 reel note: g denote for halogen free product absolute maximum rating (t a = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain current i d -9.1 a pulsed drain current i dm -50 a continuous source current (diode conduction) a,b i s -2.1 a maximum power dissipation ta = 25 o c p d 2.5 w ta = 75 o c 1.6 operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg - 55 to +150 o c thermal performance parameter symbol limit unit junction to foot (drain) thermal resistance r ? jf 22 o c/w junction to ambient thermal resistance (pcb mounted ) r ? ja 50 o c/w notes: a. pulse width limited by the maximum junction temp erature b. surface mounted on fr4 board, t 10 sec. pin definition : 1. source 8. drain 2. source 7. drain 3. source 6. drain 4. gate 5. drain
tsm4435b 30v p-channel mosfet 2/6 version: a11 electrical specifications (t a = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = -250ua bv dss -30 -- -- v gate threshold voltage v ds = v gs , i d = -250a v gs(th) -1 -- -3 v gate body leakage v gs = 20v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = -30v, v gs = 0v i dss -- -- -1.0 a on-state drain current a v ds = -5v, v gs = -10v i d(on) -40 -- -- a drain-source on-state resistance a v gs = -10v, i d = -9.1a r ds(on) -- 17 21 m v gs = -4.5v, i d = -6.9a -- 25 35 forward transconductance a v ds = -10v, i d = -9.1a g fs -- 24 -- s diode forward voltage i s = -2.1a, v gs = 0v v sd -- -0.8 -1.2 v dynamic b total gate charge v ds = -15v, i d = -9.1a, v gs = -10v q g -- 33 70 nc gate-source charge q gs -- 5.8 -- gate-drain charge q gd -- 8.6 -- input capacitance v ds = -15v, v gs = 0v, f = 1.0mhz c iss -- 1573 1900 pf output capacitance c oss -- 319 -- reverse transfer capacitance c rss -- 211 295 switching b,c turn-on delay time v dd = -15v, r l = 15 , i d = -1a, v gen = -10v, r g = 6 t d(on) -- 10 15 ns turn-on rise time t r -- 15 25 turn-off delay time t d(off) -- 110 170 turn-off fall time t f -- 70 110 notes: a. pulse test: pw 300s, duty cycle 2% b. for design aid only, not subject to production t esting. c. switching time is essentially independent of ope rating temperature.
tsm4435b 30v p-channel mosfet 3/6 version: a11 electrical characteristics curve (t a = 25 o c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current gate charge on-resistance vs. junction temperature source-drain diode forward voltage
tsm4435b 30v p-channel mosfet 4/6 version: a11 electrical characteristics curve (t a = 25 o c, unless otherwise noted) on-resistance vs. gate-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to -ambient
tsm4435b 30v p-channel mosfet 5/6 version: a11 sop-8 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code sop-8 dimension dim millimeters inches min max min max. a 4.80 5.00 0.189 0.196 b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.054 0.068 d 0.35 0.49 0.014 0.019 f 0.40 1.25 0.016 0.049 g 1.27bsc 0.05bsc k 0.10 0.25 0.004 0.009 m 0o 7o 0o 7o p 5.80 6.20 0.229 0.244 r 0.25 0.50 0.010 0.019
tsm4435b 30v p-channel mosfet 6/6 version: a11 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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