PJA63P02 features ? r ds(on) , v gs @-1.8v,i d @-2.3a<108 m ? r ds(on) , v gs @-4.5v,i d @-3.3a<63 m ? advanced trench process technology ? high density cell design for ultra low on-resistance ? specially designed for dc/dc converters ? low gate charge ? lead free in comply with eu rohs 2002/95/ec directives. ? green molding compound as per iec61249 std. . (halogen free) mechanical data ? case: sot-23 package ? terminals : solderable per mil-std-750,method 2026 ? apporx. weight : 0.0003 ounces, 0.0084grams ? marking : 63 20v p-channel enhancement mode mosfet maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted ) notes: 1. mounted on 7.5cm 2 fr-4 pcb . parameter symbol limit units drain-source voltage v ds -20 v gate-source voltage v gs + 12 v continuous drain current steady-state t a =25 o ci d -2.9 a pulsed drain current i dm -12 a power dissipation (notes 1) steady-state t a =25 o cp d 0.8 w typical thermal resistance (notes 1) r ja 155 o c/w operating junction and storage temperature range t j ,t stg -55 to + 150 o c voltage 20 volts 2.9 amperes current product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a =25 o c unless otherwise noted ) parameter symbol test condition min. typ. max. units static drain-source breakdown voltage bv dss v gs =0v, i d =-250 a-20--v gate threshold voltage v gs(th) v ds =v gs , i d =-250 a -0.45 -0.61 -1.0 v drain-source on-state resistance r ds(on) v gs = -4.5v, i d = -3.3a - 50 63 m v gs = -2.5v, i d = -2.8a - 62 80 v gs = -1.8v, i d = -2.3a - 79 108 zero gate voltage drain current i dss v ds = -16v, v gs =0v - - -1 a gate -source leakage current i gss v gs = + 8v, v ds =0v - - + 100 na diode forward voltage v sd i s = -1a, v gs =0v - -0.78 -1 v dynamic total gate charge q g v ds = -10v, i d = -2.7a v gs = -4.5v - 12.7 - nc gate-source charge q gs -1. 5- gate-drain charge q gd -2.98- tur n-on d e la y ti me td on v ds = -10v , v gs = -4.5v, r g = 6 , r l = 3 -16.2- ns turn-off delay time td off - 66.4 - tur n-on ri s e ti m e t r - 20.2 - tur n-off f a ll ti m e t f -17.2- input capacitance c iss v ds = -10v, v gs =0v f=1.0mh z - 1141 - pf output capacitance c oss -9 9- reverse transfer capacitance c rss -9 2- PJA63P02 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
|