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directfet power mosfet
directfet isometric applicable directfet outline and substrate outline rohs compliant, halogen free lead-free (qualified up to 260c reflow) ideal for high performance isolated converter primary switch socket optimized for synchronous rectification low conduction losses high cdv/dt immunity low profile (<0.7mm) dual sided cooling compatible compatible with existing surface mount techniques industrial qualified description the irf7799l2tr/tr1pbf combines the latest hexfet? power mosfet silicon technology with the advanced directfet tm packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a d 2 pak and only 0.7 mm profile. the directfet package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection soldering techniq ues, when application note an-1035 is followed regarding the manufacturing methods and processes. the directfet package allows dual sided cooling to maximize thermal transfer in power systems. the irf7799l2tr/tr1pbf is optimized for high frequency switching and synchronous rectification applications. the reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system relia bility improvements, and makes this device ideal for high performance power converters. fig 1. typical on-resistance vs. gate voltage click on this section to link to the appropriate technical paper. click on this section to link to the directfet website. surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part. repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 1.42mh, r g = 25 , i as = 21a. pulse width 400 s; duty cycle 2%. fig 2. typical on-resistance vs. drain current sb sc m2 m4 l4 l6 l8 v dss v gs r ds(on) 250v min 30v max 32m @ 10v q g tot q gd v gs(th) 110nc 39nc 4.0v 4 8 12 16 20 v gs, gate -to -source voltage (v) 20 40 60 80 100 120 140 160 180 200 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 21a t j = 25c t j = 125c 0 20 40 60 80 100 i d , drain current (a) 25 30 35 40 45 50 55 60 t y p i c a l r d s ( o n ) ( m w ) t j = 25c vgs = 7.0v vgs = 8.0v vgs = 10v vgs = 15v absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) i d @ t a = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current e as single pulse avalanche energy mj i ar avalanche current a 375 325 max. 25 6.6 140 30 250 35 21 v a d s g d s s s s s s s

form quantity irf7799l2trpbf directfet2 large can tape and reel 4000 "tr" suffix irf7799l2tr1pbf directfet2 large can tape and reel 1000 "tr1" suffix eol notice # 264 note orderable part number package type standard pack

static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 250 ??? ??? v ? v dss / t j breakdown voltage temp. coefficient ??? 0.12 ??? v/c r ds(on) static drain-to-source on-resistance ??? 32 38 m v gs(th) gate threshold voltage 3.0 4.0 5.0 v v gs(th) / t j gate threshold voltage coefficient ??? -13 ??? mv/c i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 1 1ma i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 54 ??? ??? s q g total gate charge ??? 110 165 q gs1 pre-vth gate-to-source charge ??? 26 ??? q gs2 post-vth gate-to-source charge ??? 5.7 ??? q gd gate-to-drain charge ??? 39 q godr gate charge overdrive ??? 39 ??? see fig. 9 q sw switch charge (q gs2 + q gd ) ??? 45 ??? q oss output charge ??? 33 ??? nc r g gate resistance ??? 0.73 ??? t d(on) turn-on delay time ??? 36.3 ??? t r rise time ??? 33.5 ??? t d(off) turn-off delay time ??? 73.9 ??? t f fall time ??? 26.6 ??? c iss input capacitance ??? 6714 ??? c oss output capacitance ??? 606 ??? c rss reverse transfer capacitance ??? 157 ??? c oss output capacitance ??? 5063 ??? c oss output capacitance ??? 217 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 132 198 ns q rr reverse recovery charge ??? 1412 2118 nc ??? ??? 140 a na ??? ??? 35 nc ns pf mosfet symbol r g =6.2 v ds = 25v conditions v gs = 0v, v ds = 80v, f=1.0mhz v gs = 0v, v ds = 1.0v, f=1.0mhz v ds = 16v, v gs = 0v v dd = 125v, v gs = 10v v gs = 0v ? = 1.0mhz i d = 21a v ds = v gs , i d = 250 a v ds = 250v, v gs = 0v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 2ma v gs = 10v, i d = 21a t j = 25c, i f = 21a, v dd = 50v di/dt = 100a/ s t j = 25c, i s = 21a, v gs = 0v showing the integral reverse p-n junction diode. i d = 21a v ds = 250v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v v gs = 10v v ds = 50v, i d = 21a v ds = 125v

fig 3. maximum effective transient thermal impedance, junction-to-case surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple incontact with top (drain) of part. used double sided cooling, mounting pad with large heatsink.
mounted on minimum footprint full size board with metalized back and with small clip heatsink. r is measured at t j of approximately 90c. surface mounted on 1 in. square cu board (still air). mounted on minimum footprint full size board with metalized back and with small clip heatsink. (still air) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 r 1 r 1 r 2 r 2 c ci i / ri ci= i / ri ri (c/w) i (sec) 0.38829 0.000787 0.8117 0.006586 absolute maximum ratings parameter units p d @t c = 25c power dissipation p d @t c = 100c power dissipation p d @t a = 25c power dissipation t p peak soldering temperature t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ??? 35 r 12.5 ??? r 20 ??? c/w r ??? 1.2 r 0. 0 1 max. 4.3 125 63 w c

fig 5. typical output characteristics fig 4. typical output characteristics fig 6. typical transfer characteristics fig 7. normalized on-resistance vs. temperature fig 8. typical capacitance vs.drain-to-source voltage fig 9. typical total gate charge vs gate-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v 60 s pulse width tj = 25c 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v 60 s pulse width tj = 175c 5.0v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 21a v gs = 10v 1 10 100 1000 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 140 160 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 200v v ds = 125v vds= 50v i d = 21a 3 4 5 6 7 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 175c tj = 25c tj = -40c v ds = 50v 60 s pulse width

fig 13. typical threshold voltage vs. junction temperature fig 12. maximum drain current vs. case temperature fig 10. typical source-drain diode forward voltage fig11. maximum safe operating area fig 14. maximum avalanche energy vs. drain current 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 175c single pulse 100 sec 1msec 10msec dc -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 2.0 3.0 4.0 5.0 6.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a id = 1.0ma id = 1.0a 25 50 75 100 125 150 175 t c , case temperature (c) 0 10 20 30 40 i d , d r a i n c u r r e n t ( a ) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 1400 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.33a 2.53a bottom 21a 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 175c tj = 25c tj = -40c v gs = 0v

fig 17. for n-channel hexfet power mosfets fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 13, 14: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 16a, 16b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) =
t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t a p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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%% ? "#""& # + - + + + - - - 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming tj = 150c and tstart =25c (single pulse) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 21a

fig 18a. gate charge test circuit fig 18b. gate charge waveform fig 19b. unclamped inductive waveforms t p v (br)dss i as fig 19a. unclamped inductive test circuit fig 20b. switching time waveforms fig 20a. switching time test circuit r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v ' vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s 20k v ds 90% 10% v gs t d(on) t r t d(off) t f ( ) 1 * $
0.1 % + -

g = gate d = drain s = source d d d d d d ss s s g ss ss
please see an-1035 for directfet assembly details and stencil and substrate design recommendations note: for the most current drawing please refer to ir website at: http://www.irf.com/package/

directfet part marking
please see an-1035 for directfet assembly details and stencil and substrate design recommendations logo gate marking batch number part number date code line above the last character of the date code indicates "lead-free" max 0.360 0.280 0.236 0.026 0.024 0.048 0.017 0.030 0.017 0.058 0.106 0.0274 0.0031 0.007 imperial metric dimensions min 0.356 0.270 0.232 0.022 0.023 0.046 0.015 0.029 0.015 0.053 0.099 0.0235 0.0008 0.003 code a b c d e f g h j k l m n p min 9.05 6.85 5.90 0.55 0.58 1.18 0.98 0.73 0.38 1.34 2.52 0.616 0.020 0.09 max 9.15 7.10 6.00 0.65 0.62 1.22 1.02 0.77 0.42 1.47 2.69 0.676 0.080 0.18 note: for the most current drawing please refer to ir website at: http://www.irf.com/package/

directfet tape & reel dimension (showing component orientation). loaded tape feed direction min 11.90 3.90 15.90 7.40 7.20 9.90 1.50 1.50 note: controlling dimensions in mm code a b c d e f g h max 12.10 4.10 16.30 7.60 7.40 10.10 nc 1.60 min 0.469 0.154 0.626 0.291 0.284 0.390 0.059 0.059 max 0.476 0.161 0.642 0.299 0.291 0.398 nc 0.063 dimensions metric imperial note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ reel dimensions note: controlling dimensions in mm std reel quantity is 4000 parts (ordered as irf7799l2tr). max n.c n.c 0.520 n.c 3.940 0.880 0.720 0.760 imperial min 330.00 20.20 12.80 1.50 99.00 n.c 16.40 15.90 standard option (qty 4000) code a b c d e f g h max n.c n.c 13.20 n.c 100.00 22.40 18.40 19.40 min 12.992 0.795 0.504 0.059 3.900 n.c 0.650 0.630 metric

qualification standards can be found at international rectifier?s web site http://www .irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release. msl1 (per jedec j-std-020d ??? ) rohs compliant comments: this family of products has passed jedec?s industrial qualification. ir?s consumer qualification level is granted by extension of the higher industrial level. qualification information ? qualification level industrial ?? (per jedec jesd47f ??? guidelines) yes moisture sensitivity level dfet2 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ date comments ? updated ordering information to reflect the end-of-life (eol) of the mini-reel option (eol notice #264) ? revision history 2/24/2014

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