2007. 7. 2 1/2 semiconductor technical data KDV172S silicon epitaxial pin type diode revision no : 0 vhf uhf band rf attenuator applications. agc for am/fm tuner. features low capacitance : c t =0.25[pf] (typ.) low series resistance : r s =7[ ] (typ.). designed for low inter modulation. maximum rating (ta=25 ) dim millimeters 2. anode 1 1. anode 2 3. cathode 1 / cathode 2 sot-23 a b c d e 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p 2 1 3 2.93 0.20 + _ 7 electrical characteristics (ta=25 ) characteristic symbol rating unit reverse voltage v r 50 v forward current i f 50 ma junction temperature t j 150 storage temperature range t stg -55 150 type name marking lot no. ue characteristic symbol test condition min. typ. max. unit reverse voltage v r i r =10 a 50 - - v reverse current i r v r =50v - - 0.1 a forward voltage v f i f =50ma - 0.95 - v total capacitance c t v r =50v, f=1mhz - 0.25 - pf series resistance r s i f =10ma, f=100mhz - 7.0 -
2007. 7. 2 2/2 KDV172S revision no : 0 10 series resistance r ( ? ) 2 s 10 forward current i (a) f r - i c - v r reverse voltage v (v) 13 30 10 0.1 t total capacitance c (pf) t r 550 0.3 0.5 1 2 f=1mhz ta=25 c s f 100 1m 10m 5 30 50 100 300 500 1k 2k ta=25 c f=0.2ghz 0.4 0.6 0.8 1.0 1.0 0.8 0.6 0.4 f=0.2ghz 50m
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