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| savantic semiconductor product specification silicon pnp power transistors 2SB596 description with to-220c package complement to type 2sd526 good linearity of h fe applications power amplifier applications recommend for 2025w high fidelity audio frequency amplifier output stage pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -80 v v ceo collector-emitter voltage open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current -4 a i e emitter current -4 a i b base current -3 a p c collector power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SB596 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma; i b =0 -80 v v (br)ebo emitter-base breakdown votage i e =-10ma; i c =0 -5 v v cesat collector-emitter saturation voltage i c =-3 a;i b =-0.3 a -1.7 v v be base-emitter on voltage i c =-3a ; v ce =-5v -1.5 v i cbo collector cut-off current v cb =-80v; i e =0 -30 a i ebo emitter cut-off current v eb =-5v; i c =0 -100 a h fe-1 dc current gain i c =-0.5a ; v ce =-5v 40 240 h fe-2 dc current gain i c =-3a ; v ce =-5v 15 f t transition frequency i c =-0.5a ; v ce =-5v 3 mhz c ob output capacitance i e =0; v cb =-10v;f=1mhz 130 pf h fe-1 classifications r o y 40-80 70-140 120-240 savantic semiconductor product specification 3 silicon pnp power transistors 2SB596 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) savantic semiconductor product specification 4 silicon pnp power transistors 2SB596 |
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