![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
1 n-channel 30-v (d-s) mosfet fea t ures ? halogen-free acc ording to iec 61249-2-21 definition ?trenchfet ? po w er mosfet ? compliant to rohs directive 2002/95/ec application s ? notebo ok load switch ? low current dc-to-dc p r oduct summary v ds (v) r ds(on) ( ) i d (a) a q g (typ .) 30 0.032 at v gs = 10 v 6.8 9.2 nc 0.045 at v gs = 4.5 v 5.8 notes: a. p a ckage limited. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady state conditions is 110 c/w. absolute maximum ratings t a = 2 5 c, unless otherwise noted p arame ter symbol li mit un it d rain-source voltage v ds 30 v gate-source vo ltage v gs 20 contin uou s drain current (t j = 150 c ) t c = 25 c i d 6.8 a a t c = 70 c 5 a t a = 25 c 6.5 b, c t a = 70 c 4.9 b,c pulsed drain current i dm 30 c ontin uou s source-drain diode current t c = 25 c i s 2.7 t a = 25 c 1.7 b,c max i mum power dissipation t c = 25 c p d 4.1 w t c = 70 c 2.6 t a = 25 c 2 b,c t a = 70 c 1.25 b,c operat ing j unction and storage temperature range t j , t stg - 55 to 150 c t h e rmal resistance ratings p arameter symbol t ypic al maximum unit ma ximum junction-to-ambient b, d t 5 s r thj a 45 62.5 c/w ma xim um junction-to-foot steady state r thjf 25 30 so-8 sd sd sd gd 5 6 7 8 t op v ie w 2 3 4 1 n -channel mosfet g d s www.din-tek.jp dt m 9410
2 no t e s: a. p ulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design, not s ubject to production testing. stresses b eyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specif ications t j = 25 c, unless otherwise noted p aram eter sym bol test conditions min. typ. max. un it static drain-source breakdown v oltage v ds v gs = 0 v, i d = 250 a 30 v v ds temper ature coefficient ' v ds /t j i d = 250 a 33 mv/c v gs(t h) temperature co efficient ' v gs(th) /t j - 6 .2 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 13v gate-s o urce leakage i gss v ds = 0 v, v gs = 20 v 10 0 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 55 c 10 on-state dr ain current a i d(o n ) v ds t 5 v, v gs = 10 v 2 0 a drain-source on-state re sistance a r ds(on) v gs = 10 v, i d = 5 a 0.016 0 .032 : v gs = 4.5 v , i d = 4 a 0.029 0 .045 forward transconductance a g fs v ds = 10 v, i d = 5 a 24 s dynam i c b input capacita n ce c is s v ds = 1 5 v , v gs = 0 v , f = 1 mhz 1295 pf output capacitance c oss 170 rev erse t ransfer capacitance c rs s 72 t o tal gate charge q g v ds = 15 v, v gs = 10 v, i d = 5 a 21.8 33 nc v ds = 15 v, v gs = 4.5 v , i d = 5 a 9.2 14 gate-s o urce charge q gs 3.8 gate-dr a in charge q gd 2.5 ga te re sistance r g f = 1 mhz 2 .4 : tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 3 : i d # 5 a, v gen = 4.5 v, r g = 1 : 21 40 ns rise time t r 14 25 t ur n-off delaytime t d(off) 20 40 fa l l time t f 918 tu r n - o n d e l ay t i m e t d( on) v dd = 15 v, r l = 3 : i d # 5 a, v gen = 10 v , r g = 1 : 10 20 rise time t r 816 t ur n-off delaytime t d( off) 21 35 fa l l time t f 816 drain- so urce body diode characteristics continous source-drain diode current i s t c = 25 c 2.7 a pulse diod e forward current i sm 30 body diode vo ltage v sd i s = 1.7 a, v gs = 0 v 0.77 1.2 v body diode reverse recovery time t rr i f = 3 a, di/dt = 100 a/s , t j = 2 5 c 21 40 ns body diode reverse recovery charge q rr 15 30 n c reverse recovery fall time t a 13 ns re verse recovery rise time t b 8 z z z g l q w h n m s ' 7 0 3 typica l c har acteristics 25 c, unless otherwise noted outp ut c haracteristics on-resistance vs. drain current and gate voltage gate charge 0 6 12 1 8 24 30 0.0 0.5 1.0 1.5 2.0 2.5 v gs = 10 v thr u 4 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs = 3 v 0.010 0.014 0.01 8 0.022 0.026 0.030 0 6 12 1 8 24 30 - on-resistance ( ) r ds(on) i d - drain c u rrent (a) v gs = 4.5 v v gs = 10 v i d = 5 a 0 2 4 6 8 10 0 5 10 15 20 25 - gate-to-so u rce v oltage ( v ) q g - t otal gate charge (nc) v gs v ds = 10 v v ds = 20 v v ds = 15 v transfer characteristics cap acitance on-resistance vs. junction temperature 0.0 0.3 0.6 0.9 1.2 1.5 012345 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c = 25 c t c = 125 c t c = - 55 c c rss 0 320 640 960 12 8 0 1600 06 1 2 1 8 24 30 c oss c is s v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) - 50 - 25 0 25 50 75 100 125 150 t j - j u nction t emperat u re (c) r ds(on) - on-resistance ( n ormalized) 0.7 0.9 1.1 1.3 1.5 1.7 v gs = 4.5 v v gs = 10 v i d = 5 a www.din-tek.jp dt m 9410 4 ty pi cal ch aracteristics 25 c, unless otherwise noted sou r ce-drain diode forward voltage threshold voltage 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 v sd - so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s t j = 25 c t j = 150 c - 0.9 - 0.6 - 0.3 0 0.3 0.6 - 50 - 25 0 25 50 75 100 125 150 v ariance ( v ) v gs(th) t j - temperat u re (c) i d = 250 a i d = 5 ma on-resistance vs. gate-to-so urce t emperature single pulse power, junction-to-ambient 0 0.02 0.04 0.06 0.0 8 0.10 01 23 45 67 8 910 - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) t a = 125 c t a = 25 c 0 12 24 36 4 8 60 po w er ( w ) time (s) 11 0 0.1 0.01 0.001 safe operat ing area, junction-to-ambient 0.001 0.01 0.1 1 10 100 - drain c u rrent (a) i d 0.1 1 10 100 t a = 25 c single p u lse 1 s, 10 s 10 ms 100 ms dc limited b y r * ds(on) v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified 1 ms www.din-tek.jp dt m 9410 5 typica l c har acteristics 25 c, unless otherwise noted * t he power dissipation p d is based on t j(ma x ) = 150 c , using junction-to-case thermal resi stance, and is more useful in settling the upper diss i pation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 2 5 7 10 12 0 25 50 75 100 125 150 t c - case temperat u re (c) i d - drain c u rrent (a) package limited power de rat ing, junction-to-foot 0 1 2 3 4 5 0 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w ) powe r d erating, junction-to-ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 t a - am b ient temperat u re (c) po w er ( w ) www.din-tek.jp dt m 9410 6 ty pi cal ch aracteristics 25 c, unless otherwise noted normalized t h ermal transient impedance, junction-to-ambient 0.001 0.1 1 10 -3 10 -2 0 0 01 01 1 10 -1 10 -4 100 0.2 0.1 0.05 0.02 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e t ransient thermal impedance single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 110 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 0.01 normalized the rmal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e t ransient thermal impedance 1 0.1 0.01 0.05 0.02 single p u lse www.din-tek.jp dt m 9410 1 di m millimeter s inc hes min ma x min max a 1 .35 1.7 5 0.053 0.069 a 1 0 .10 0.2 0 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0 8 0 8 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all lea d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (ga ge pla ne) soic (narrow): 8-lead jedec p a rt n u m b er: ms -012 s package information www.din-tek.jp 1 appl ication note r ecommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 1) 0.050 (1.270) 0.022 (0.559) return to index r eturn to inde x application note www.din-tek.jp 1 disclaimer all product, produ ct specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertech nology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp |
Price & Availability of DTM9410
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |