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| inchange semiconductor product specification silicon npn power transistors 2N5970 description ? with to-3 package ? low collector saturation voltage ? high power dissipations applications ? designed for general-purpose power amplifier and switching applications pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 80 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 5 v i c collector current 15 a i cm collector current-peak 30 a i b base current 5 a p d total power dissipation t c =25 ?? 150 w t j junction temperature 150 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.1 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2N5970 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a ;i b =0 60 v v cesat-1 collector-emitter saturation voltge i c =7a ;i b =0.7a 1.0 v v cesat-2 collector-emitter saturation voltage i c =15a; i b =3.75a 4.0 v v besat base-emitter saturation voltage i c =15a; i b =3.75a 2.5 v i ceo collector cut-off current v ce =30v; i b =0 1.0 ma i cev collector cut-off current v ce =80v; v be(off) =1.5v t c =150 ?? 0.5 5.0 ma i cbo collector cut-off current v cb =80v; i e =0 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma h fe-1 dc current gain i c =5a ; v ce =1.5v 20 60 h fe-2 dc current gain i c =15a ; v ce =4v 4 f t transition frequency i c =1a;v ce =10v 4 mhz inchange semiconductor product specification 3 silicon npn power transistors 2N5970 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10mm) |
Price & Availability of 2N5970
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