XP151A13A0MR-g power mosfet products package order unit XP151A13A0MR sot-23 3,000/reel XP151A13A0MR-g (*) sot-23 3,000/reel parameter symbol ratings units drain - source voltage vdss 20 v gate - source voltage vgss 8 v drain current (dc) id 1 a drain current (pulse) idp 4 a reverse drain current idr 1 a channel power dissipation * pd 0.5 w channel temperature tch 150 storage temperature tstg -55~150 general description the XP151A13A0MR-g is an n-channel power mosfet with low on state resistance and ultra high-speed switching characteristics. because high-speed switching is possible, the ic can be efficiently set thereby saving energy. in order to counter static, a gate protect diode is built-in. the small sot-23 package makes high density mounting possible. applications notebook pcs cellular and portable phones on-board power supplies li-ion battery systems features low on-state resistance : rds(on) = 0.1 @ vgs = 4.5v : rds(on) = 0.14 @ vgs = 2.5v : rds(on) = 0.25 @ vgs = 1.5v ultra high-speed switching gate protect diode built-in driving voltage : 1.5v n-channel power mosfet dmos structure small package : sot-23 environmentally friendly : eu rohs compliant, pb free pin configuration/ marking product names a bsolute m a ximum r a tings equivalent circuit ta = 2 5 * when implemented on a ceramic pcb g gate s source d drain 1 1 3 x * x represents production lot number. (*) the ?-g? suffix denotes halogen and antimony free as well as being fully rohs compliant. product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
XP151A13A0MR-g parameter symbol conditions min. typ. max. units drain cut-off current idss vds= 20v, vgs= 0v - - 10 a gate-source leak current igss vgs= 8v, vds= 0v - - 10 a gate-source cut-off voltage vgs(off) id= 1ma, vds= 10v 0.5 - 1.2 v id= 0.5a, vgs= 4.5v - 0.075 0.100 id= 0.5a, vgs= 2.5v - 0.10 0.14 drain-source on-state resistance *1 rds(on) id= 0.1a, vgs= 1.5v - 0.17 0.25 forward transfer admittance *1 | yfs | id= 0.5a, vds= 10v - 4.2 - s body drain diode forward voltage vf if= 1a, vgs= 0v - 0.8 1.1 v parameter symbol conditions min. typ. max. units thermal resistance (channel-ambience) rth (ch-a) implement on a ceramic pcb - 250 - /w parameter symbol conditions min. typ. max. units input capacitance ciss - 220 - pf output capacitance coss - 120 - pf feedback capacitance crss vds= 10v, vgs=0v f= 1mhz - 45 - pf parameter symbol conditions min. typ. max. units turn-on delay time td (on) - 10 - ns rise time tr - 15 - ns turn-off delay time td (off) - 75 - ns fall time tf vgs= 5v, id= 0.5a vdd= 10v - 65 - ns electrical characteristics dc characteristics t a = 25 *1 effective during pulse test. t a = 25 switching characteristics thermal characteristics dynamic characteristics t a = 25 product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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