? 2010 ixys all rights reserved 1 - 6 20101119a vub 72-12/16noxt ixys reserves the right to change limits, test conditions and dimensions. three phase rectifer bridge with brake chopper application: ? drives with - mains input - dc link - inverter or chopper feeding the machine - motor and generator/brake operation features: ? three phase mains rectifer ? brake chopper: - igbt with low saturation voltage - hiperfred? free wheeling diode package: ? high level of integration ? solder terminals for pcb mounting ? ul pending, e72873 ? isolated dcb ceramic base plate ? large creepage and strike distances ? high reliability part name (marking on product) vub72-12noxt VUB72-16NOXT v rrm = 1200/1600 v i davm = 110 a ntc ~ 1 ~ 7 ~ 9 6 11 12 10 5 4 2 ntc d5 d3 d1 d6 d4 d2 t d 1 2 4 5 6 7 9 10 11 12
? 2010 ixys all rights reserved 2 - 6 20101119a vub 72-12/16noxt ixys reserves the right to change limits, test conditions and dimensions. chopper igbt t ratings symbol defnitions conditions min. typ. max. unit v ces collector emitter voltage t vj = 25c to 150c 1200 v v ges max. dc gate voltage continuous -20 +20 v i c25 i c80 collector current dc t c = 25c dc t c = 80c 58 40 a a v ce(sat) collector emitter saturation voltage i c = 35 a; v ge = 15 v t vj = 25c t vj = 125c 1.85 2.15 2.2 v v ge(th) gate emitter threshold voltage i c = 1 ma t vj = 25c 5.4 6.5 v i ces collector emitter leakage current v ce = v ces ; v ge = 0 v t vj = 25c t vj = 125c 0.1 0.1 ma ma i ges gate emitter leakage current v ce = 0 v; v ge = 20 v 500 na t d(on) t r t d(off) t f e on e off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load t vj = 125c v ce = 600 v; i c = 35 a v ge = 15 v; r g = 27 w ; l = 100 h 70 40 250 100 3.8 4.1 ns ns ns ns mj mj q gon v ce = 600 v; v ge = 15 v; i c = 35 a 110 nc i cm v cek reverse bias safe operating area rbsoa; v ge = 15 v; r g = 27 w ; l = 100 h clamped inductive load ; t vj = 125c 70 < v ces -l s d i /dt a v t sc (scsoa) short circuit safe operating area v ce = 900 v; v ge = 15 v; t vj = 125c r g = 27 w; non-repetitive 10 s r thjc thermal resistance junction to case 0.65 k/w r thch thermal resistance case to heatsink with heat transfer paste, see mounting instructions 0.9 k/w chopper diode d ratings symbol defnitions conditions min. typ. max. unit v rrm max. repetitive reverse voltage t vj = 150c 1200 v i f25 i f80 forward current dc t c = 25c t c = 125c 25 15 a a v f forward voltage i f = 25 a t vj = 25c t vj = 125c 2.7 2.0 3.1 v v i r reverse current v r = v rrm t vj = 25c t vj = 125c 0.1 0.1 ma ma i rm t rr reverse recovery current reverse recovery time i f = 15 a; v r = 600 v t vj = 125c di f /dt = -400 a/s 16 130 a ns r thjc thermal resistance junction to case 2.3 k/w r thjh thermal resistance case to heatsink with heat transfer paste 3.12 k/w i equivalent circuits for simulation ratings symbol defnitions conditions min. typ. max. unit v 0 r 0 diode d1 - d6 t vj = 125c 0.85 7 v mw v 0 r 0 igbt t t vj = 150c 1.1 40 v mw v 0 r 0 diode d t vj = 125c 1.25 32 v mw
? 2010 ixys all rights reserved 3 - 6 20101119a vub 72-12/16noxt ixys reserves the right to change limits, test conditions and dimensions. temperature sensor ntc ratings symbol defnitions conditions min. typ. max. unit r 25 b 25/100 resistance t = 25c 2.2 3560 kw k module ratings symbol defnitions conditions min. typ. max. unit i rms rms current per pin 100 a t vj t vjm t stg operating temperature max. virtual junction temperature storage temperature -40 -40 150 150 125 c c c v isol isolation voltage i isol < 1 ma; 50/60 hz; t = 1 min 3600 v~ m d mounting torque (m5) 2 2.5 nm d s d a creep distance on surface strike distance through air 5 5 mm mm weight 35 g input rectifer diode d1 - d6 symbol conditions ratings min. typ. max. v rrm max. repetitive reverse voltage vub 72 -12 no1 t vj = 25c vub 72 -16 no1 1200 1600 v v i fav i d(av)m i fsm average forward current max. average dc output current max. surge forward current sine 180 t c = 80c rectangular; d = 1 / 3 ; bridge t c = 80c t = 10 ms; sine 50 hz t vj = 25c 40 110 530 a a a p tot total power dissipation t c = 25c 100 w i r reverse current v r = v rrm t vj = 25c v r = 0.8v rrm t vj = 125c 0.4 0.02 ma ma v f forward voltage i f = 25 a t vj = 25c t vj = 125c 1.0 0.9 1.1 v v r thjc thermal resistance junction to case per diode t vj = 25c 1.2 k/w r thjh thermal resistance case to heatsink with heat transfer paste t vj = 25c 1.42 k/w r(t) = r 25 e 1 1 t 298k b 25/100
? 2010 ixys all rights reserved 4 - 6 20101119a vub 72-12/16noxt ixys reserves the right to change limits, test conditions and dimensions. ordering part name marking on product delivering mode base qty ordering code standard vub 72-12noxt vub72-12noxt box 10 510734 standard vub 72-16noxt VUB72-16NOXT box 10 510741 outline drawing dimensions in mm (1 mm = 0.0394) 3 8 1 2 4 5 7 9 1 0 6 7 14 50 35 5,5 23,5 25,75 51,5 26 5,5 31,6 15 63 13 17 0,5 38,6 2 4x45 r r2 r1 0,3 0,2 0,1 0,15 +0,2 0,5 r 0,25 0,25 3,3 0,5 0,3 0,3 7 0,3 14 0,3 11 0,3 0,3 11 8,3 ?0,5 4,6 5 1 1 15,8 1 1 product marking
? 2010 ixys all rights reserved 5 - 6 20101119a vub 72-12/16noxt ixys reserves the right to change limits, test conditions and dimensions. 0.0 0.5 1.0 1.5 2.0 0 10 20 30 40 50 60 70 80 v f [v] i f [a] 0 40 80 120 160 0 10 20 30 40 50 60 70 80 t h [c] i davm [a] i 2 t [a 2 s] t [ms] 1 10 10 100 1000 10000 t [s] i fsm [a] 0.001 0.01 0.1 1 0 100 200 300 400 500 0 10 20 30 40 50 60 0 20 40 60 80 100 120 140 p tot [w] i davm [a] 0 40 80 120 160 t a [c] t vj = 25 c t vj = 150c typ. max. t vj = 150 c t vj = 45 c v r = 0.8v rrm v r = 0 v t vj = 150 c t vj = 45 c r thha [k/w] 0.5 1 1.5 2 3 4 6 fig. 1 forward current vs. voltage drop per rectifier diode fig. 2 surge overload current per rectifier diode fig. 3 max. forward current vs. heatsink temperature (rectifier bridge) fig. 4 i 2 t versus time per rectifier diode fig. 5 power dissipation vs. direct output cu rrent & ambient temperature (rectifier bridge)
? 2010 ixys all rights reserved 6 - 6 20101119a vub 72-12/16noxt ixys reserves the right to change limits, test conditions and dimensions. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 10 20 30 40 50 60 70 v ce [v] i c [a] 0 1 2 3 4 5 0 10 20 30 40 50 60 70 v ce [v] i c [a] 0 20 40 60 80 0 2 4 6 8 10 i ce [a] 20 30 40 50 60 70 80 3 4 5 6 e [mj] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t [s] z thjc [k/w] -20 0 20 40 60 80 100 120 140 160 10 100 1000 10000 t [c] r [ ] r g [ ] v ge = 15 v t vj = 125c single pulse t vj = 25c t vj = 125c chopper diode rectifier diode igbt e [mj] fig. 6 igbt, typ. output characteristics fig. 7 igbt, typ. output characteristics fig. 8 igbt, t yp. switching energy versus collector current fig. 9 igbt, t yp. switching energy versusgate resistance fig. 10 typ. transient thermal impedance fig. 11 typ. thermistor resistace vs. temperature v ge = 15 v 17 v 19 v 9 v 11 v 13 v e on e off r g = 27 v ce = 600 v v ge = 15 v t vj = 125c e on e off i c = 35 a v ce = 600 v v ge = 15 v t vj = 125c
? 2010 ixys all rights reserved 7 - 6 20101119a vub 72-12/16noxt ixys reserves the right to change limits, test conditions and dimensions. 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj [c] 200 600 1000 0 400 800 0 10 20 30 40 50 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 0 5 10 15 20 25 30 35 40 i rm [a] q r [c] i f [a] v f [v] -di f /dt [a/s] -di f /dt [a/s] fig. 12 forward current i f versus v f fig. 13 typ. reverse recovery charge q r versus -di f /dt fig. 14 typ. peak reverse current i rm versus -di f /dt fig. 15 dynamic parameters q r , i rm versus t vj i rm q r i f = 30 a i f = 15 a i f = 7.5 a t vj = 25c 100c 150c i f = 30 a i f = 15 a i f = 7.5 a t vj = 125c v r = 800 v t vj = 125c v r = 800 v 200 600 1000 0 400 800 100 120 140 160 180 0 200 400 600 800 1000 0 40 80 120 0.0 0.4 0.8 1.2 v fr [v] t rr [ns] t fr [s] -di f /dt [a/s] -di f /dt [a/s] fig. 16 typ. recovery time t rr versus -di f /dt fig. 17 typ. peak forward voltage v fr and t fr versus di f /dt t fr v fr t vj = 125c v r = 800 v i f = 30 a i f = 15 a i f = 7.5 a t vj = 125c i f = 15 a v r = 800 v
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