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  r s e m i c o n d u c t o r l l 4 2 , l l 4 3 small signal schottky diodes features mechanical data absolute ratings(limiting values) electrical characteristics for general purpose applications these diodes features very low turn-on voltage and fast switching. these devices are protected by a pn junction guard ring against excessive voltage, such as electrostatic discharges. these diodes are also available in the do-35 case with the type designation ba t42 to ba t43. v rrm i frm i fsm repetitive peak reverse v oltage repetitive peak forward current at t p < 1s, d < 0.5, surge forward current at t p < 10m s , junction t emperature power dissipation at i f ambient operating temperature range storage t emperature range t stg t a t j p tot forward continuous current at t a =25 c t a =25 c t a =65 c t a =25 c 1) v alid provided thatelectrodes are kept at ambient temperature ma a mw ma v -65 to+150 -65 to+125 c c c 125 500 4 200 30 200 1) 1) 1) 1) case : minimelf glass case(sod-80 ) w eight : approx. 0.05 gram reverse breakdown voltage t ested with 100 m a leakage current pulse t est t p < 300 m s, d < 2% at v r =25v at v r =25v , t j =100 ! forward voltage pulse t est t p < 300 m s, d < 2% at i f =200ma, at i f =10ma, at i f =50ma, at i f =2ma, at i f =15ma 30 0.26 80 5 7 0.45 0.33 0.65 0.4 0.5 100 1 thermal resistance junction to ambient air junction capacitance at v r =1v ,f=1mhz reverse recovery time form i f =10ma,i r =10ma,i r =1ma v (br)r r q ja v v v v v v m a m a pf k/w ns % vf vf vf vf vf i r i r c j trr 1) v alid provided that electrodes are kept at ambient temperature 300 1) detection ef ficiency at r l =15k w c l =300pf ,f=45mhz, v r =2v minimelf dimensions in inches and (millimeters) symbols units v alue min. t yp. max. unis symbols ll42 ll42 ll43 ll43 2- 45 j f 0.142(3.6) 0.134(3.4) 0.019(0.48) 0.011(0.28) 0.063(1.6) 0.055(1.4) high temperature soldering guaranteed : 260 !/ 10 seconds at terminals component in accordance to rohs 2002 / 95 / ec and weee 2002 / 96 / ec jinan jinghen g co., l td. no .51 heping ro ad jinan p .r. china tel:86-531-86943 657 f ax:86-531-869470 96 www .jifusemicon. com
r at i n g s a n d c h a r a c t e r i s t i c c u r v e s l l 4 2 / l l 4 3 figure 1. forward current versus forward voltage at dif ferent temperatures(typical values) figure 2. forward current versus forward voltage (typical values) 0 0 0.2 25 0.2 0.4 0.6 0.8 1 0.4 50 10 10 10 10 10 10 10 1 1 10 10 10 -2 -1 -2 -1 1 2 3 3 2 0 100 200 300 400 0.6 0.8 1 1.2 v f (v) v f (v) 500 i f (ma) i r ( m a) i f (ma) figure 3.reverse current versus ambient temperature(typical values) max. typ. t j = 25 c t amb =125 c t amb = 25 c t amb = -55 c 90% confidence v r =25v 75 100 125 t amb=( c) 2- 46 jinan jinghen g co., l td. no .51 heping ro ad jinan p .r. china tel:86-531-86943 657 f ax:86-531-869470 96 www .jifusemicon. com
r at i n g s a n d c h a r a c t e r i s t i c c u r v e s l l 4 2 / l l 4 3 figure 5.capacitance c j versus reverse applied voltage v r (typical values) 5 10 0 2 4 6 8 10 12 15 25 30 20 v r (v) c j (pf) 0 5 10 10 10 10 10 10 1 -2 -1 1 2 3 15 20 25 30 i r ( m a) v r (v) figure 4.reverse current versus continuous reverse voltage(typical values) 25 c 50 c 75 c 100 c 125 c t amb = 25 c 2- 47 jinan jinghen g co., l td. no .51 heping ro ad jinan p .r. china tel:86-531-86943 657 f ax:86-531-869470 96 www .jifusemicon. com


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