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  dmp3160l p-channel enhancem ent mode mosfet product summary v (br)dss r ds(on) i d t a = +25c -30v 122m ? @ v gs = -10v -2.7a 190m ? @ v gs = -4.5v -2.0a description this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. applications ? dc-dc converters ? power management functions features ? low on-resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot23 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.008 grams (approximate) ordering information (note 4 & 5) part number compliance case packaging dmp3160l -7 standard sot23 3000/tape & reel dmp3160lq -7 automotive sot23 3000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. marking information date code key year 2007 2008 2009 2010 2011 2012 2013 2014 2015 code u v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view sot23 d g s top view ps3 = product type marking code ym = date code marking y = year (ex: u = 2007) m = month (ex: 9 = september) source body diode gate drain e q uivalent circuit e3 product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -30 v gate-source voltage v gss 20 v drain current (note 6) v gs = -10v steady state t a = +25c t a = +70c i d -2.7 -2 a pulsed drain current (note 7) i dm -8 a thermal characteristics characteristic symbol value units total power dissipation (note 6) p d 1.08 w thermal resistance, junction to ambient @t a = +25c (note 6) r ja 115 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8) drain-source breakdown voltage bv dss -30 ? ? v v gs = 0v, i d = -250a zero gate voltage drain current i dss ? ? -800 na v ds = -30v, v gs = 0v gate-source leakage i gss ? ? ? 80 ? 800 na v gs = ? 12v, v ds = 0v v gs = ? 15v, v ds = 0v on characteristics (note 8) gate threshold voltage v gs(th) -1.3 -1.8 -2.1 v v ds = v gs , i d = -250a static drain-source on-resistance r ds(on) ? 97 165 122 190 m ? v gs = -10v, i d = -2.7a v gs = -4.5v, i d = -2.0a forward transfer admittance |y fs | ? 5.9 ? s v ds = -5v, i d = -2.7a diode forward voltage (note 8) v sd ? ? -1.26 v v gs = 0v, i s = -2.7a dynamic characteristics(note 9) input capacitance c iss ? 384.4 ? pf v ds = -10v, v gs = 0v f = 1.0mhz output capacitance c oss ? 59.4 ? pf reverse transfer capacitance c rss ? 52.8 ? pf gate resistance r g ?? 17.1 ?? ? v gs = 0v, v ds = 0v, f = 1.0mhz total gate charge(v gs = -4.5v) q g ?? 4.0 ?? nc v gs = -10v/-4.5v, v ds = -15v, i d = -3a total gate charge(v gs = -10v) q g ?? 8.2 ?? nc gate-source charge q gs ?? 0.9 ?? nc gate-drain charge q gd ?? 1.2 ?? nc turn-on delay time t d(on) ?? 4.8 ?? ns v ds = -15v, v gs = -10v, r g = 6 ? , i d = -1a turn-on rise time t r ?? 7.3 ?? ns turn-off delay time t d(off) ?? 22.5 ?? ns turn-off fall time t f ?? 13.4 ?? ns notes: 3. device mounted on fr-4 pcb. t 10 sec. 4. pulse width 10 ? s, duty cycle 1%. 5. short duration pulse test used to minimize self-heating effect. 6. guaranteed by design. not subject to product testing. dmp3160l product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com


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DigiKey

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DMP3160LQ-7
31-DMP3160LQ-7TR-ND
Diodes Incorporated MOSFET BVDSS: 25V~30V SOT23 T&R 75000: USD0.09
30000: USD0.09384
9000: USD0.09526
6000: USD0.10584
3000: USD0.11043
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Avnet Americas

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DMP3160LQ-7
DMP3160LQ-7
Diodes Incorporated Trans MOSFET P-CH 30V 2.7A 3-Pin SOT-23 T/R - Tape and Reel (Alt: DMP3160LQ-7) 300000: USD0.05791
30000: USD0.05884
24000: USD0.05978
18000: USD0.06211
12000: USD0.06398
6000: USD0.06596
3000: USD0.06842
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0

Mouser Electronics

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DMP3160LQ-7
621-DMP3160LQ-7
Diodes Incorporated MOSFETs MOSFET BVDSS: 25V-30V SOT23 T&R 3K 1: USD0.42
10: USD0.342
100: USD0.233
1000: USD0.131
3000: USD0.107
9000: USD0.095
24000: USD0.09
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Verical

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DMP3160LQ-7
82712169
Zetex / Diodes Inc Trans MOSFET P-CH 30V 2.7A Automotive AEC-Q101 3-Pin SOT-23 T/R 3000: USD0.09
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TME

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DMP3160LQ-7
DMP3160LQ-7
Diodes Incorporated Transistor: P-MOSFET; unipolar; -30V; -2A; 1.08W; SOT23 3000: USD0.088
500: USD0.095
100: USD0.106
25: USD0.12
5: USD0.181
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Avnet Silica

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DMP3160LQ-7
DMP3160LQ-7
Diodes Incorporated Trans MOSFET P-CH 30V 2.7A 3-Pin SOT-23 T/R (Alt: DMP3160LQ-7) BuyNow
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New Advantage Corporation

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DMP3160LQ-7
Diodes Incorporated 3000: USD0.1046
15000: USD0.0968
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Perfect Parts Corporation

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DMP3160LQ-7
Diodes Incorporated RFQ
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