ace 8212b common drain n - channel enhancement mode field effect transistor with esd ver 1. 2 1 description the ACE8212B uses advanced trench technology to provide excellent r ds(on) and low gate charge. they offer operation over a wide gate drive range from 1.8v to 12v. it is esd protected. this device is suitable for use as a uni - directional or bi - directional load switch, facilitated by its common - drain configuration. features ? v ds (v)=20v ? i d = 8 a (v gs = 10 v) ? tssop - 8 r ds(on ) < 13 m (v gs = 10 v) r ds(on ) < 14 m (v gs =4.5v) r ds(on ) < 19 m (v gs = 2 .5v) r ds(on ) < 27 m (v gs = 1.8 v) ? dfn2*5 r ds(on ) < 13 m (v gs = 10 v) r ds(on ) < 16 m (v gs =4.5v) r ds(on ) < 22 m (v gs = 2 .5v) r ds(on ) < 35 m (v gs = 1.8 v) ? esd protected: 2000v absolute maximum ratings parameter symbol max unit drain - source voltage v dss 2 0 v gate - source voltage v gss 12 v continuous drain current *ac t a =25 i d 8 a t a = 7 0 6.4 pulsed drain current i dm 30 a power dissipation tssop - 8 t a =25 p d 1.5 w t a =70 1 dfn2*5 t a =25 1.6 t a =70 1 operating junction temperature / storage temperature range t j /t stg - 55/150 o c
ace8 212b common drain n - channel enhancement mode field effect transistor with esd ver 1.2 2 packaging type tssop - 8 dfn2*5 ordering i nformation ace8 212b xx + h tm : tssop - 8 jn : dfn2*5 pb - free halogen - free
ace8 212b common drain n - channel enhancement mode field effect transistor with esd ver 1.2 3 electrical characteristics t a =25 , unless ot herwise noted . parameter symbol conditions min. typ. max. unit static drain - source breakdown voltage v (br)dss v gs =0v, i d =250 ua 20 v gate threshold voltage v gs(th) v d s =v gs , i d s =250ua 0 . 5 0 . 7 2 1 gate leakage current i gss v ds =0v,v gs = 1 2 v 10 ua zero gate voltage drain current i dss v ds =2 0 v, v gs =0v 1 ua maximum body - diode continuous current i s 2. 4 a drain - source on - resistance ( t s s o p - 8 ) r ds(on) v gs = 1 0 v, i d = 8 a 8 . 2 1 3 m v gs = 4 .5 v, i d = 5 a 9 . 2 1 4 v gs = 2 . 5 v, i d = 4 a 1 2 1 9 v gs = 1 . 8 v, i d = 3 a 1 8 2 7 drain - source on - resistance ( dfn2 * 5 ) r ds(on) v gs = 1 0 v, i d = 8 a 10 13 m v gs = 4 .5 v, i d = 7 a 11 16 v gs = 2 . 5 v, i d = 6 a 14 22 v gs = 1 . 8 v, i d = 4 .5 a 21 35 forward transconductance g f s v ds = 1 0 v,i d = 8 a 3 0 s diode forward voltage v sd i s d = 1 a, v gs =0v 0 . 7 2 1 . 0 v switching total gate charge q g v ds =1 0 v, v gs = 4.5 v, i d = 8 a 4 . 6 5 6 . 0 5 nc gate - source charge q gs 1 . 1 2 1 . 4 6 gate - drain charge q gd 3 . 7 2 4 . 8 4 turn - on time td(on) v gs = 1 0 v, r l = 1 0 , v ds = 10 v, r g en = 3 4 8 7 . 6 9 7 5 . 2 n s tr 8 0 0 . 4 1 6 0 0 . 8 turn - off time td(off) 1 7 2 8 3 4 5 6 tf 6 1 8 0 1 2 3 6 0 dynamic input capacitance ciss v gs =0v, v ds =10v, f=1mhz 3 6 . 4 5 pf output capacitance coss 1 8 3 . 8 8 reverse transfer capacitance crss 1 4 . 5 7
ace8 212b common drain n - channel enhancement mode field effect transistor with esd ver 1.2 4 note: 1. the value of r ja is measured with the device mounted on 1in2 fr - 4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. 2. repetitive rating, pulse width limited b y junction temperature. 3. the current rating is based on the t 10s junction to ambient thermal resistance rating. typical performance characteristics
ace8 212b common drain n - channel enhancement mode field effect transistor with esd ver 1.2 5 typical performance characteristics
ace8 212b common drain n - channel enhancement mode field effect transistor with esd ver 1.2 6 typical performance characteristics
ace8 212b common drain n - channel enhancement mode field effect transistor with esd ver 1.2 7 packing information tssop - 8 unit: mm
ace8 212b common drain n - channel enhancement mode field effect transistor with esd ver 1.2 8 packing information dfn2*5 bottom view unit: mm
ace8 212b common drain n - channel enhancement mode field effect transistor with esd ver 1.2 9 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant in to the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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