2SC2073 transistor (npn) features power dissipation p cm : 1.5 w (tamb=25 ) collector current i cm : 1.5 a collector-base voltage v (br)cbo : 150 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 100 a, i e =0 150 v collector-emitter breakdown voltage v (br)ceo ic= 1 ma, i b =0 150 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb = 120 v, i e =0 10 a emitter cut-off current i ebo v eb = 5 v, i c =0 10 a dc current gain h fe(1) v ce = 10 v, i c = 500 ma 40 140 collector-emitter saturation voltage v ce(sat) i c = 500 ma, i b = 50 ma 1.5 v base-emitter voltage v be v ce = 10 v, i c = 500 ma 0.65 0.85 v transition frequency f t v ce = 10 v, i c = 500 ma 4 mhz collector output capacitance c ob v cb = 10 v, i e =0, f= 1 mhz 35 pf 1 2 3 to-220 1. base 2. collector 3. emitter 2SC2073 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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