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to our customers, old company name in catalogs and other documents on april 1 st , 2010, nec electronics corporation merged with renesas technology corporation, and renesas electronics corporation took over all the business of both companies. therefore, although the old company name remains in this document, it is a valid renesas electronics document. we appreciate your understanding. renesas electronics website: http://www.renesas.com april 1 st , 2010 renesas electronics corporation issued by: renesas electronics corporation (http://www.renesas.com) send any inquiries to http://www.renesas.com/inquiry.
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data sheet silicon transistor 2SA1977 pnp epitaxial silicon transistor microwave amplifier 1996 document no. p10925ej1v0ds00 (1st edition) date published april 1996 p printed in japan preliminary data sheet features package dimension (in millimeters) high f t f t = 8.5 ghz typ. high gain | s 21e | 2 = 12.0 db typ. @f = 1.0 ghz, v ce = - 8 v, i c = - 20 ma high-speed switching characterstics equivalent npn transistor is the 2sc3583. absolute maximum ratings (t a = 25 c) parameter symbol rating unit collector to base voltage v cb0 - 20 v collector to emitter voltage v ce0 - 12 v emitter to base voltage v eb0 - 3.0 v collector current i c - 50 ma total power dissipation p t 200 mw junction temperature t j 150 c storage temperature t stg - 65 to +150 c electrical characteristics (t a = 25 c) parameter symbol test conditions min. typ. max. unit collector cutoff current i cb0 v cb = - 10 v - 0.1 m a emitter cutoff current i eb0 v eb = - 1 v - 0.1 m a dc current gain h fe v ce = - 8 v, i c = - 20 ma 20 100 gain bandwidth product f t v ce = - 8 v, i c = - 20 ma, f = 1 ghz 6.0 8.5 ghz collector capacitance c re *v cb = - 10 v, i e = 0, f = 1 mhz 0.5 1 pf insertion power gain | s 21e | 2 v ce = - 8 v, i c = - 20 ma, f = 1.0 ghz 8.0 12.0 db noise figure nf v ce = - 8 v, i c = - 3 ma, f = 1 ghz 1.5 3 db * mesured by a 3-terminal bridge. emitter and case should be connected to the guard terminal. h fe classification rank fb marking t92 h fe 20 to 100 2.8 + 0.2 _ 1.5 0.65 +0.1 ?.15 2 1 3 2.9 + 0.2 _ 0.95 0.95 0.4 +0.1 ?.05 0.4 +0.1 ?.05 marking 0.16 +0.1 ?.06 0.3 1.1 to 1.4 0 to 0.1 pin connections 1: emitter 2: base 3: collector marking; t92
2 2SA1977 switching characteristics v in = 1 v typ. turn-on delay time t on (delay) 1.08 ns rise time t r 0.66 ns turn off delay time t off (delay) 0.32 ns fall time t f 0.78 ns switching time measurement circuit v cc ( e ) r c1 r c2 r l1 v out r l2 v ss ( e ) 50 w r e v in r s sampling oscilloscope v in v out 20 ns t r t r t off (delay) t on (delay) v ee ( + ) v in = 1 v, v bb = - 0.5 v, r c1 = r c2 r s r c r l1 r l2 r e v ee v cc ( w )( w )( w )( w )( w )(v)(v) 160 1 k 200 250 2.7 k 27 26.3 parameter symbol unit
3 2SA1977 typical characteristics 0 50 100 150 200 100 200 300 400 total power dissipation vs. ambient temperature p t - total power dissipation - mv t a - ambient temperature - ?c
4 2SA1977 e0.1 e1.0 e10 e100 e1000 e0.01 e0.1 e1.0 e10 e0.1 e1.0 e10 e100 e1000 e0.01 e0.1 e1.0 e10 v be (on) - dc base voltage - v v ce(sat) - collector saturation voltage - v v be(sat) - base saturation voltage - v i c - collector current - ma base to emitter voltage vs. collector current collector and base saturation voltage vs. collector current i c = 10 i b v be (s) v ce (s) v ce = e1 v i c - collector current - ma
5 2SA1977 e1 e10 e100 0 5 10 15 e1 e10 e100 0 2 6 10 4 8 e1 e10 e100 0 0.5 1 1.5 0.1 e15 0 15 35 0.2 0.3 0.4 0.5 1.0 2.0 3.0 e10 e5 5 10 20 25 30 |s 21e | 2 - insertion power gain - db insertion gain vs. frequency i c - collector current - ma gain bandwidth product vs. collector current v ce = e8 v f t - gain bandwidth product - ghz v ce = e8 v f = 1 ghz c re - collector feed-back capacitance - pf v cb - collector to base voltage - v |s 21e | 2 - insertion power gain - db f - frequency - ghz output capacitance vs. collector to base voltage f = 1 mhz insertion gain vs. frequency v ce = e8 v i c = e20 ma i c - collector current - ma
6 2SA1977 e0.1 1.0 10 20 30 40 50 100 e1.0 e10 e100 e1000 e0.1 1 10 20 30 40 50 100 e1.0 e10 e100 e1000 5 4 3 2 h fe - dc current gain h fe - dc current gain dc current gain vs. collector current dc current gain vs. collector current v ce = e8 v i c - collector current - ma v ce = e3 v v ce = e2 v v ce = e1 v i c - collector current - ma
7 2SA1977 s 11 3.0 gh z 0.1 gh z v ce = e8 v i c = e20 ma s 22 3.0 gh z 0.1 gh z v ce = e8 v i c = e20 ma
8 2SA1977 s-parameter (v ce = 1 v, i c = 5 ma, zo = 50 w ) fs 11 s 21 s 12 s 22 mhz mag ang mag ang mag ang mag ang 100 0.553 - 43.7 11.03 150. 0.423 71.2 0.666 - 25.0 200 0.460 - 78.2 8.780 129. 0.691 59.4 0.696 - 42.2 300 0.427 - 104 7.003 115. 0.857 54.4 0.556 - 52.9 400 0.393 - 123 5.700 105. 0.983 52.7 0.461 - 59.5 500 0.377 - 138 4.74 97.6 0.109 52.2 0.392 - 64.2 600 0.367 - 149 4.053 91.2 0.120 52.5 0.341 - 67.4 700 0.362 - 159 3.549 85.9 0.131 52.9 0.307 - 70.5 800 0.363 - 168 3.151 61.3 0.143 53.1 0.280 - 73.7 900 0.364 - 175 2.847 77.0 0.154 53.8 0.258 - 76.1 1000 0.365 178 2.603 73.0 0.165 54.0 0.241 - 78.8 1100 0.369 172 2.391 69.3 0.176 54.4 0.227 - 82.0 1200 0.375 166 2.219 66.8 0.188 54.2 0.217 - 84.8 1300 0.376 162 2.070 62.7 0.200 54.4 0.207 - 88.4 1400 0.384 157 1.940 59.4 0.213 54.1 0.200 - 92.0 1500 0.391 153 1.838 56.3 0.225 53.8 0.192 - 94.9 1600 0.399 149 1.744 53.5 0.238 53.4 0.188 - 99.1 1700 0.405 146 1.659 50.8 0.250 52.9 0.184 - 102 1800 0.411 142 1.584 48.2 0.264 52.3 0.184 - 107 1900 0.418 139 1.520 45.6 0.277 51.7 0.182 - 111 2000 0.423 135 1.461 43.1 0.290 51.1 0.181 - 115 2100 0.429 132 1.408 40.9 0.302 50.2 0.180 - 119 2200 0.438 130 1.361 38.6 0.314 49.4 0.182 - 125 2300 0.444 127 1.316 36.4 0.328 48.5 0.181 - 128 2400 0.450 124 1.276 34.2 0.341 47.6 0.187 - 132 2500 0.457 122 1.239 32.3 0.353 46.5 0.188 - 137
9 2SA1977 s-parameter (v ce = 3 v, i c = 5 ma, zo = 50 w ) fs 11 s 21 s 12 s 22 mhz mag ang mag ang mag ang mag ang 100 0.595 - 34.2 11.62 154. 0.0328 74.9 0.902 - 19.4 200 0.511 - 62.8 9.618 134. 0.0573 64.8 0.760 - 33.2 300 0.432 - 86.0 7.920 120. 0.0734 58.5 0.633 - 41.9 400 0.362 - 104 6.575 110. 0.0852 57.1 0.542 - 47.3 500 0.345 - 119 5.511 102. 0.0964 55.9 0.471 - 50.3 600 0.323 - 132 4.749 95.9 0.106 56.4 0.420 - 52.2 700 0.308 - 143 4.177 90.5 0.116 56.6 0.383 - 54.1 800 0.300 - 153 3.712 85.8 0.126 57.1 0.355 - 55.7 900 0.297 - 162 3.359 81.5 0.137 57.3 0.332 - 57.2 1000 0.295 - 170 3.064 77.6 0.147 57.9 0.315 - 58.9 1100 0.297 - 177 2.818 74.0 0.158 57.9 0.299 - 60.6 1200 0.300 176 2.617 70.6 0.169 58.3 0.287 - 62.1 1300 0.303 170 2.439 67.4 0.181 58.1 0.276 - 64.6 1400 0.308 164 2.284 64.2 0.192 58.1 0.266 - 66.5 1500 0.314 160 2.159 61.2 0.203 57.8 0.258 - 68.5 1600 0.322 155 2.046 58.4 0.215 57.5 0.250 - 71.4 1700 0.328 151 1.944 55.7 0.227 57.3 0.243 - 73.6 1800 0.335 147 1.855 53.0 0.240 56.5 0.241 - 76.9 1900 0.341 143 1.774 50.5 0.252 56.1 0.233 - 80.3 2000 0.349 140 1.705 48.1 0.264 55.5 0.230 - 83.1 2100 0.355 136 1.638 45.7 0.276 54.7 0.226 - 86.5 2200 0.364 133 1.583 43.5 0.289 54.2 0.222 - 90.7 2300 0.372 130 1.53 41.2 0.302 53.2 0.218 - 93.6 2400 0.378 128 1.479 39.0 0.314 52.5 0.218 - 97.5 2500 0.386 125 1.439 37.0 0.326 51.7 0.215 - 101.
10 2SA1977 s-parameter (v ce = 8 v, i c = 5 ma, zo = 50 w ) fs 11 s 21 s 12 s 22 mhz mag ang mag ang mag ang mag ang 100 0.679 - 27.6 11.75 156. 0.0289 76.9 0.918 - 15.9 200 0.586 - 51.4 10.01 138. 0.0508 66.6 0.802 - 27.7 300 0.491 - 71.0 8.453 124. 0.0670 61.8 0.690 - 35.3 400 0.417 - 87.3 7.152 114. 0.0780 58.9 0.603 - 39.9 500 0.362 - 100 6.040 106. 0.0886 58.3 0.534 - 42.5 600 0.323 - 113 5.245 99.6 0.0984 57.9 0.485 - 44.0 700 0.293 - 124 4.627 94.2 0.107 58.0 0.448 - 45.5 800 0.274 - 135 4.124 89.4 0.117 58.4 0.419 - 46.6 900 0.261 - 145 3.734 85.0 0.126 58.6 0.396 - 47.7 1000 0.251 - 154 3.419 81.2 0.135 59.4 0.377 - 48.8 1100 0.247 - 162 3.150 77.6 0.145 59.6 0.361 - 50.2 1200 0.245 - 170 2.919 74.2 0.155 59.6 0.350 - 51.4 1300 0.245 - 177 2.720 71.0 0.166 59.8 0.339 - 53.2 1400 0.247 175 2.551 67.8 0.176 59.9 0.327 - 54.6 1500 0.251 169 2.410 64.8 0.187 59.7 0.320 - 56.1 1600 0.258 164 2.283 62.1 0.198 59.5 0.311 - 58.2 1700 0.263 159 2.169 59.3 0.209 59.4 0.305 - 59.8 1800 0.269 154 2.067 56.7 0.221 58.9 0.299 - 62.4 1900 0.276 150 1.977 54.4 0.232 58.6 0.292 - 64.9 2000 0.283 146 1.898 51.8 0.243 58.1 0.287 - 67.0 2100 0.290 142 1.824 49.5 0.256 57.5 0.283 - 69.6 2200 0.298 138 1.762 47.2 0.267 57.0 0.277 - 72.9 2300 0.307 135 1.701 44.9 0.279 56.1 0.272 - 75.1 2400 0.314 132 1.645 42.8 0.291 55.4 0.270 - 78.7 2500 0.321 129 1.597 40.6 0.304 54.7 0.264 - 81.3
11 2SA1977 s-parameter (v ce = 8 v, i c = 20 ma, zo = 50 w ) fs 11 s 21 s 12 s 22 mhz mag ang mag ang mag ang mag ang 100 0.310 - 47.6 20.39 144. 0.0218 77.0 0.798 - 25.2 200 0.243 - 82.1 14.87 123. 0.0375 72.7 0.611 - 37.8 300 0.205 - 107 11.25 111. 0.0514 71.4 0.488 - 43.1 400 0.165 - 125 8.95 102. 0.0643 71.6 0.417 - 45.1 500 0.172 - 140 7.329 96.6 0.0777 71.5 0.365 - 45.7 600 0.169 - 153 6.232 91.6 0.0909 71.5 0.331 - 45.8 700 0.166 - 163 5.414 87.5 0.104 71.0 0.308 - 46.5 800 0.169 - 173 4.778 83.5 0.117 70.6 0.289 - 47.3 900 0.172 179 4.3 80.2 0.130 70.0 0.274 - 47.9 1000 0.176 172 3.902 77.1 0.143 69.3 0.262 - 49.1 1100 0.182 166 3.576 74.1 0.156 68.6 0.251 - 50.4 1200 0.188 160 3.310 71.2 0.169 67.7 0.244 - 51.5 1300 0.194 156 3.080 68.7 0.182 66.7 0.235 - 53.7 1400 0.202 151 2.875 66.0 0.195 66.0 0.227 - 55.6 1500 0.209 147 2.711 63.4 0.208 64.9 0.221 - 57.0 1600 0.217 144 2.564 61.0 0.221 63.9 0.213 - 59.5 1700 0.224 140 2.431 58.6 0.234 62.8 0.209 - 61.7 1800 0.233 137 2.315 56.4 0.247 61.7 0.204 - 64.7 1900 0.240 134 2.212 54.2 0.259 60.8 0.197 - 67.9 2000 0.247 132 2.123 52.0 0.272 59.8 0.193 - 70.0 2100 0.255 129 2.037 49.8 0.284 58.3 0.188 - 73.3 2200 0.263 126 1.965 47.7 0.296 57.2 0.183 - 77.5 2300 0.272 124 1.896 45.7 0.309 56.1 0.179 - 80.1 2400 0.278 122 1.833 43.7 0.321 54.8 0.177 - 84.0 2500 0.286 120 1.778 41.7 0.332 53.7 0.171 - 87.7
2SA1977 no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: ?standard?, ?special?, and ?specific?. the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard : computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices in ?standard? unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 94.11

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