? 2012 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 2500 v v dgr t j = 25 c to 150 c, r gs = 1m 2500 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 200 ma i dm t c = 25 c, pulse width limited by t jm 600 ma p d t c = 25 c83w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-247) 1.13 / 10 nm/lb.in f c mounting force (plus220 & to-263) 11..65 / 25..14.6 n/lb. weight to-263 2.5 g plus220 4.0 g to-247 6 .0 g ds100187c(04/12) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 2500 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = 0.8 ? v dss 5 a t j = 125 c 500 a r ds(on) v gs = 10v, i d = 50ma, note 1 450 high voltage power mosfets ixta02n250 IXTH02N250 ixtv02n250s v dss = 2500v i d25 = 200ma r ds(on) 450 n-channel enhancement mode fast intrinsic diode features z fast intrinsic diode z low package inductance advantages z easy to mount z space savings applications z high voltage power supplies z capacitor discharge z pulse circuits g = gate d = drain s = source tab = drain to-247 (ixth) plus220smd (ixtv_s) g s d (tab) g s d d (tab) d (tab) g s to-263 (ixta)
ixys reserves the right to change limits, test conditions, and dimensions. ixta02n250 IXTH02N250 ixtv02n250s symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 100v, i d = 0.5 ? i d25 , note 1 88 145 ms c iss 116 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 8 pf c rss 3 pf t d(on) 19 ns t r 19 ns t d(off) 32 ns t f 33 ns q g(on) 7.4 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 0.7 nc q gd 5.3 nc r thjc 1.5 c/w r thcs to-247 & plus220 0.25 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 200 ma i sm repetitive, pulse width limited by t jm 800 ma v sd i f = 100ma, v gs = 0v, note 1 2.0 v t rr 1.5 s ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 100 (external) dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source i f = 200ma, -di/dt = 50a/ s, v r = 100v plus220smd outline 1. gate 2. drain 3. source 4. drain e e1 d l2 a a1 l1 l l3 e 2x b c a2 l4 a3 e1 note 1. pulse test, t 300 s, duty cycle, d 2%. *additional provisions for lead to lead voltage isolation are required at v ds > 1200v. pin: 1 - gate 2 - drain 3 - source to-263 outline
? 2012 ixys corporation, all rights reserved ixta02n250 IXTH02N250 ixtv02n250s fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400 v ds - volts i d - milliamperes v gs = 10v 8v 6v 7v 4v 5v fig. 3. output characteristics @ t j = 125oc 0 50 100 150 200 0 20 40 60 80 100 120 140 160 180 200 v ds - volts i d - milliamperes v gs = 10v 7v 6v 5v 4v fig. 4. r ds(on) normalized to i d = 100ma value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 100ma i d = 200ma fig. 5. r ds(on) normalized to i d = 100ma value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 0 50 100 150 200 250 300 350 400 i d - milliamperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 40 80 120 160 200 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - milliamperes fig. 1. output characteristics @ t j = 25oc 0 50 100 150 200 0 102030405060708090100 v ds - volts i d - milliamperes v gs = 10v 7v 4v 6v 5v
ixys reserves the right to change limits, test conditions, and dimensions. ixta02n250 IXTH02N250 ixtv02n250s fig. 7. input admittance 0 50 100 150 200 250 300 350 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - milliamperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 50 100 150 200 250 300 0 50 100 150 200 250 300 350 i d - milliamperes g f s - millisiemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 100 200 300 400 500 600 700 800 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v sd - volts i s - milliamperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 012345678 q g - nanocoulombs v gs - volts v ds = 1000v i d = 100ma i g = 1ma fig. 11. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2012 ixys corporation, all rights reserved ixys ref: t_02n250(2p)04-19-12 ixta02n250 IXTH02N250 ixtv02n250s fig. 13. forward-bias safe operating area @ t c = 25oc 10 100 1,000 100 1,000 10,000 v ds - volts i d - milliamperes t j = 150oc t c = 25oc single pulse 100ms 1ms 100s r ds(on) limit 10ms dc 25s fig. 14. forward-bias safe operating area @ t c = 75oc 10 100 1,000 100 1,000 10,000 v ds - volts i d - milliamperes t j = 150oc t c = 75oc single pulse 100ms 1ms 100s r ds(on) limit 10ms dc 25s
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