fqb25n33 tm_f085 330v n-channel mosfet fqb25n33 tm_f 085 330v n-channel mosfet absolute maximum ratings thermal characteristics * when mounted on the minimum pa d size recommended (pcb mount) symbol param eter ratings units v dss drain-source voltage 330 v i d drain current - continuous (t c = 25 o c) 25 a - continuous (t c = 100 o c) 16.0 a i dm drain current - pulsed (note 1) 100 a v gss gate -source voltage 30 v e as single pulse avalanche energy (note 2) 370 mj i ar avalanche current (note 1) 25 a e ar repetitive avalance energy (note 1) 37 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t a = 25 o c) * 3.1 w power dissipation (t c = 25 o c) 250 w - derate above 25 o c2 . 0 w / o c t j , t stg operating and storage temperature -55 to +150 o c t l maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 o c symbol parameter ratings units r jc thermal resistance, junction to case 0.5 o c/w r ja thermal resistance, junction to ambient * 40 o c/w r ja thermal resistance, junction to ambient 62.5 o c/w features ? 25a, 330v, r ds(on) = 0.23 ? @v gs = 10v ? low gate charge (typical 58nc) ? low crss (typical 40pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? qualified to aec q101 ? rohs compliant general description these n-channel enhancement mode power field effect transistors are produced usi ng farichild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimized on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. tm april 20 10 ? 20 10 f a irchild se micondu ct or corp orat ion f qb25n33tm _f085 rev. a www.fairchil dsemi.c o m 1
electrical characteristics t c = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics b vdss drain-source breakdown voltage i d = 250 a, v gs = 0v 330 -- -- v ? b vdss/ ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c -- 0.34 -- v/ o c i dss zero gate voltage drain current v ds = 330v,v gs = 0v v ds = 264v,t c =125 c -- -- 1 a -- -- 10 i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, forward v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 -- 5.0 v r on ) drain to source on resistance v gs = 10v, i d = 12.5a, -- 0.18 0.23 ? g fs forward transonductance v ds = 50v, i d = 12.5a, (note 4) -- 1 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 1510 2010 pf c oss output capacitance -- 290 385 pf c rss reverse transfer capacitance -- 40 60 pf switching characteristics t d(on) turn-on delay time v dd = 165v, i d = 25a r gs = 25 ? (note 4, 5) -- 20 35 ns t r turn-on rise time -- 100 160 ns t d(off) turn-off delay time -- 90 145 ns t f turn-off fall time -- 70 110 ns q g(tot) total gate charge v ds = 297v, i d = 25a, v gs = 15v, (note 4, 5) -- 58 75 nc q gs gate to source gate charge -- 11.2 -- nc q gd gate to drain charge -- 21 -- nc drain-source diode characte ristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 25 a i sm maximum pulsed drain-source diode forward current -- -- 100 a v sd drain-source diode forward voltage v gs = 0, i s = 25a -- -- 1.5 v t rr reverse recovery time v gs = 0, i s = 25a, di f /dt = 100a/ s (note 4) -- 275 -- ns q rr reverse recovery charge -- 3.6 -- c ds( package marking and ordering information device marking device package reel size tape width quantity fqb25n33 fqb25n33 tm_f085 d2-pak 330mm 24mm 800 notes: 1: repetitive rating : pluse width limi ted by maximum junction temperature 2: l = 1.79mh, i as = 25a, v dd = 50v, r g = 25 ? , starting t j = 25 o c 3: i sd 25a, di/dt 200a/ s, v dd bv dss , starting t j = 25 o c 4: pulse test : pulse width 300 s, duty cycle 2% 5: essentially independent of operating temperature fqb25n33 tm_f085 330v n-channel mosfet FQB25N33TM_f085 rev. a www.fairchildsemi.com 2
typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage variation vs. source current and temperatue figure 5. capacitance characteristics figure 6. gate charge characteristics 110 0.1 1 10 100 * notes : 1. 250 p s pulse test 2. t c = 25 o c v ds , drain-source voltage [v] i d , drain current [a] v gs top : 15.0 v 10.0 v 8.0 v 7.5 v 7.0 v 6.5 v 6.0 v 5.5 v bottom : 5.0 v 246810 0.1 1 10 100 v gs , gate-source voltage [v] i d , drain current [a] -55 o c 25 o c 150 o c * notes : 1. v ds = 50v 2. 250 p s pulse test 0 102030405060 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 * note : t j = 25 o c v gs = 15v v gs = 10v r ds(on) [ : ], drain-source on-resistance i d , drain current [a] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1e-4 1e-3 0.01 0.1 1 10 100 150 o c 25 o c * notes : 1. v gs = 0v 2. 250 p s pulse test i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 10203040506070 0 2 4 6 8 10 12 v ds = 264v v ds = 165v v ds = 66v * note : i d = 25a q g , total gate charge [nc] v gs , gate-source voltage [v] 0.1 1 10 100 0 1000 2000 3000 4000 capacitances [pf] v ds , drain-source voltage [v] * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd capacitance (pf) fqb25n33 tm_f085 330v n-channel mosfet fq b25n33 tm_f085 rev. a www.fairchildsemi.com 3
typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] * notes : 1. v gs = 10 v 2. i d = 12.5 a -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] * notes : 1. v gs = 0 v 2. i d = 250 p a 25 50 75 100 125 150 0 5 10 15 20 25 30 t c , case temperature [ o c] i d , drain current (a) 1 10 100 1000 0.1 1 10 100 100 p s 1ms 10ms dc i d , drain current [a] v ds , drain-sourcevoltage[v] * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse operation in this area is limited by r ds(on) 500 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e -3 0.01 0.1 1 0.02 0.01 0.05 0.1 0.2 d=0.5 * n o te s : 1 . z t jc (t) = 0 .5 0 c/w max. 2 . d u ty f a c to r, d = t 1 /t 2 3 . t jm - t c = p dm * z t jc (t) single pulse t 1 , square w ave pulse d uration [sec] z t jc (t), thermal response 2 t 1 p dm t 2 fqb25n33 tm_f085 330v n-channel mosfet fq b25n33 tm_f085 rev. a www.fairchildsemi.com 4
gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms fqb25n33 tm_f085 330v n-channel mosfet fq b25n33 tm_f085 rev. a www.fairchildsemi.com 5
peak diode recovery dv/dt test circuit & waveforms fqb25n33 tm_f085 330v n-channel mosfet fq b25n33 tm_f085 rev. a www.fairchildsemi.com 6
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-6 supersot ? -8 supremos ? syncfet ? sync-lock? ? * the power franchise ? tinyboost ? tinybuck ? tinycalc ? tinylogic ? tinyopto ? tinypower ? tinypwm ? tinywire ? trifault detect ? truecurrent ? * serdes ? uhc ? ultra frfet ? unifet ? vcx ? visualmax ? xs? * trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provi ded in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. anti-counterfeiting policy fairchild semiconductor corporation's anti-counterfeiting policy. fairchild's anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support. counterfeiting of semiconductor parts is a growing problem in t he industry. all manufacturers of semiconductor products are exp eriencing counterfeiting of their parts. customers who inadvertently purchase counter feit parts experience many problems such as loss of brand reputation, substandard p erformance, failed applications, and increased cost of production and manufacturing delays. fairchild is taking strong measures to protect ourselves and our cus tomers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts eit her directly from fairchild or from a uthorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or from authorized fairchi ld distributors are genuine parts, have full traceability, meet fairch ild's quality standards for handling and storage and pr ovide access to fair child's full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and will appropr iately address any warranty issues t hat may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from u nauthorized sources. fairchild is committed to combat this glo bal problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. product status definitions definition of terms datasheet identification product status definition advance information formative / in design datasheet contains the design s pecifications for product developmen t. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specific ations. fairchild semiconductor rese rves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specificati ons on a product that is disconti nued by fairchild semiconductor. the datasheet is for reference information only. rev. i48 fqb25n33 tm_f085 330v n-channel mosfet fq b25n33 tm_f085 rev. a www.fairchildsemi.com 7
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